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PTF 10111 6 Watts, 1.5 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ Full Gold Metallization Silicon Nitride Passivated 100% Lot Traceability
* * *
Typical Output Power vs. Input Power
8
Output Power (Watts)
7 6 5 4 3 2 1 0 0.0 0.1 0.2 0.3 0.4 0.5
A-12 3456 9820
1011 1
VDD = 28V IDQ = 75 mA f = 1.5 GHz
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 36 0.208 -40 to +150 4.8
Unit
Vdc Vdc C Watts W/C C C/W
e
1
PTF 10111
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 40 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
68 -- -- 0.2
Max
-- 1 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 75 mA, f = 1.5 GHz) Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz-- all phase angles at frequency of test)
Symbol
Gps P-1dB hD Y
Min
15.0 6 45 --
Typ
16 7 50 --
Max
-- -- -- 30:1
Units
dB Watts % --
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
90 14 80 Gain 70 60 11 50 Efficiency (%) 40 VDD = 28 V 30 8 IDQ = 75 mA 20 Output Pow er (W) 10 5 0 1300 1400 1500 1600 1700
16
60 Efficiency (%) 50
15
Gain (dB)
Gain (dB)
40
VDD = 28 V
14
IDQ = 75 mA POUT = 6 W
Return Loss (dB)
-30 5 20 -15 10 -25
13
12 1450
1475
1500
1525
0 -35 1550
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB) Efficiency (%)
Broadband Test Fixture Performance
Output Power & Efficiency
Gain (dB)
e
Output Power vs. Supply Voltage
10
-10 -20
PTF 10111
Intermodulation Distortion vs. Output Power
VDD = 28 V IDQ = 75 mA f1 = 1500.0 MHz f2 = 1500.1 MHz
Output Power (Watts)
9
IM3 IM5 IM7
8 7 6 5 22 24 26 28 30 32 34
IMD (dBc)
-30 -40 -50 -60 -70 0
IDQ = 75 mA f = 1500 MHz
Supply Voltage (Volts)
1
2
3
4
5
6
7
8
Output Power (Watts-PEP)
Power Gain vs. Output Power
15 14
Capacitance vs. Supply Voltage
20 18 16 14 12 10 8 6 4 2 0 0 5
Power Gain (dB)
13 12 11 10 9 0.0 0.1 1.0 10.0
Cds and Cgs (pF)
IDQ = 75 mA IDQ = 38 mA IDQ = 19 mA
VDD = 28 V f = 1.5 Hz
VGS = 0 V f = 1 MHz
4
Cgs Cds Crss
2 1 0 10 20 30 40
Output Power (Watts)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1 0.99 0.98 0.97 0.96 -20 30 Temp. (C) 80 130
0.05 0.145 0.24 0.335 0.43 0.525
Voltage normalized to 1.0 V Series show current (A)
3
Crss
3
PTF 10111
Impedance Data
(VDD = 28 V, IDQ = 75 mA, POUT = 6 W)
D
e
Z Source Z Load
G S
Frequency
GHz 1.3 1.4 1.5 1.5 1.5 1.6 1.7 R
Z Source W
jX 2.5 0.6 -1.0 -1.6 -0.6 0.2 0.5 R 9.0 6.6 6.8 6.9 7.9 8.3 8.2
Z Load W
jX 6.0 6.5 7.3 8.2 5.4 4.9 4.0 Z0 = 50 W 11.5 12.0 11.5 10.5 9.0 9.1 10.0
Typical Scattering Parameters
(VDS = 28 V, ID = 300 mA)
f (MHz)
100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200
S11 Mag
0.867 0.832 0.843 0.844 0.852 0.862 0.868 0.874 0.882 0.886 0.893 0.899 0.907 0.905 0.903 0.898 0.896 0.892 0.889 0.885 0.882 0.880
S21 Ang
-65 -77 -106 -123 -133 -140 -146 -151 -155 -158 -161 -164 -167 -170 -173 -175 -177 -179 178 176 173 171
S12 Ang
131 123 97 81 69 59 50 42 35 29 24 19 14 9 4 0 -5 -9 -13 -17 -21 -25
S22 Ang
42 34 18 4 -7 -15 -19 -19 -16 -7 20 57 74 80 83 85 86 83 78 69 59 60
Mag
21.8 19.2 14.4 11.0 8.71 7.08 5.79 4.80 4.05 3.48 3.04 2.69 2.43 2.19 2.00 1.83 1.71 1.60 1.52 1.45 1.40 1.37
Mag
0.010 0.011 0.013 0.014 0.013 0.011 0.009 0.007 0.006 0.004 0.003 0.003 0.005 0.007 0.008 0.011 0.013 0.016 0.020 0.023 0.023 0.021
Mag
0.801 0.765 0.740 0.744 0.774 0.815 0.836 0.851 0.861 0.869 0.885 0.897 0.912 0.921 0.928 0.929 0.933 0.934 0.937 0.940 0.944 0.950
Ang
-41 -50 -72 -88 -98 -107 -116 -123 -129 -133 -137 -141 -145 -148 -151 -154 -157 -159 -161 -163 -165 -168
4
e
Test Circuit
PTF 10111
Test Circuit Block Diagram for f = 1.5 GHz
DUT C1, C7-9 C2, C3 C10, C11 C4, C5 C6 C12 PTF 10111 33 pF, Capacitor ATC 100 B 2.2 pF, Capacitor ATC 200 B 0.1 mF, 50 V, Capacitor 1.5 pF, Capacitor ATC 100 A 2.0 pF, Capacitor ATC 100 A 100 mF, 50 V, Electrolytic Capacitor 0.21 l 1.5 GHz Microstrip 50 W 0.037 l 1.5 GHz Microstrip 33.3 W
l3 l4 l5 l6 l1
L1, L2 R1, R2, R3 Circuit Board
l1 l2
0.045 l 1.5 GHz Microstrip 18.5 W 0.13 l 1.5 GHz Microstrip 12.4 W 0.07 l 1.5 GHz Microstrip 19.8 W 0.20 l 1.5 GHz Microstrip 22 W 0.18 l 1.5 GHz Microstrip 50 W 3 Turn, #22 AWG, 0.120" I.D. 10 K, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
Placement Diagram (not to scale)
5
PTF 10111
e
Artwork (1 inch
)
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10111 Uen Rev. A 02-18-99
6

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