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| (R) MJE172 MJE182 COMPLEMENTARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CEO V CBO V EBO IC I CM IB P tot Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (I E = 0) Base-Emitter Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case 25 o C 80 100 7 3 6 1 12.5 Value MJE182 MJE172 80 100 7 3 6 1 12.5 V V V A A A W Unit September 1998 1/4 MJE172 - MJE182 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max 83.4 10 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO T CASE = 150 o C V EB = 7 V I C = 10 mA I C = 0.5 A I C = 1.5 A IC = 3 A I C = 1.5 A IC = 3 A I C = 0.5 A I C = 0.1 A I C = 0.5 A I C = 1.5 A I C = 0.1 A f = 10 MHz V CB = 10 V for MJE172 for MJE182 IE = 0 I B = 50 mA I B = 0.15 A I B = 0.6 A I B = 0.15 A I B = 0.6 A V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 10 V f = 0.1MHz 60 40 pF pF 50 30 12 50 80 0.3 0.9 1.7 1.5 2 1.2 250 Min. Typ. Max. 0.1 0.1 0.1 Unit A mA A V V V V V V V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter on Voltage Base-Emitter on Voltage DC Current Gain V BE(sat) V BE h FE fT C CBO Transistor Frequency Collector-base Capacitance MHz Pulsed: Pulse duration = 300s, duty cycle 1.5% For PNP type voltage and current values are negative. 2/4 MJE172 - MJE182 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 c1 0016114 3/4 MJE172 - MJE182 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 4/4 |
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