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| IPD06N03L OptiMOS(R) Buck converter series Feature *N-Channel Product Summary VDS RDS(on) ID 30 5.9 50 P- TO252 -3-11 V m A *Logic Level *Low On-Resistance RDS(on) *Excellent Gate Charge x R DS(on) product (FOM) *Superior thermal resistance *175C operating temperature *Avalanche rated *dv/dt rated *Ideal for fast switching buck converter Type IPD06N03L Package P- TO252 -3-11 Ordering Code Q67042-S4109 Marking 06N03L Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current1) TC =25C1) Symbol ID Value Unit A 50 50 Pulsed drain current TC=25C ID puls 200 Avalanche energy, single pulse 1) ID=20A, V DD=25V, RGS=25 EAS 250 mJ Repetitive avalanche energy, limited by T jmax2) Reverse diode dv/dt IS=50A, VDS=24V, di/dt=200A/s, Tjmax=175C EAR dv/dt 15 6 kV/s Gate source voltage Power dissipation TC=25C VGS Ptot 20 150 V W Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg -55... +175 55/175/56 C Page 1 2003-01-17 IPD06N03L Thermal Characteristics Parameter Symbol min. Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Values typ. max. Unit RthJC RthJA RthJA - 0.7 - 1 100 K/W - - 75 50 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS=0V, I D=1mA Values typ. max. Unit V(BR)DSS 30 - - V Gate threshold voltage, V GS = VDS ID = 80 A VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, V GS=0V, T j=25C VDS=30V, V GS=0V, T j=125C IDSS IGSS 0.01 10 1 1 100 100 A Gate-source leakage current VGS=20V, VDS=0V nA Drain-source on-state resistance VGS=4.5V, ID=30A RDS(on) - 6.8 8.7 m Drain-source on-state resistance VGS=10V, ID=30A RDS(on) - 4.7 5.9 1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 113A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-01-17 IPD06N03L Electrical Characteristics Parameter Symbol Conditions min. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max, ID=30A Values typ. max. Unit 29 58 - S Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Ciss Coss Crss td(on) tr td(off) tf VGS=0V, VDS =25V, f=1MHz - 1900 740 180 7.3 19 34 20.5 2530 990 270 11 29 50 30.7 pF VDD=15V, VGS=10V, ID=25A, RG =3.6 - ns Qgs Qgd Qg VDD=15V, ID=25A - 6.3 12.3 25.8 8.4 16.4 34.3 nC VDD=15V, ID=25A, VGS=0 to 5V - Output charge Qoss VDS=15V, ID =25A, VGS=0V - 35.5 31.9 nC Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge V(plateau) VDD=15V, ID=25A - 3.1 - V IS TC=25C - - 50 A I SM VSD t rr Q rr VGS =0V, IF =50A VR =15V, IF =lS , diF /dt=100A/s - 0.9 41 46 200 1.2 51 58 V ns nC Page 3 2003-01-17 IPD06N03L 1 Power dissipation Ptot = f (TC) 2 Drain current I D = f (TC) parameter: VGS 10 V 160 IPD06N03L 55 IPD06N03L W A 45 120 40 Ptot 100 ID 20 40 60 80 100 120 140 160 C 190 35 30 80 25 60 20 15 10 20 5 0 0 0 0 20 40 60 80 100 120 140 160 C 190 40 TC TC 4 Max. transient thermal impedance Z thJC = f (tp) parameter : D = tp/T 10 1 IPD06N03L 3 Safe operating area I D = f ( VDS ) parameter : D = 0 , T C = 25 C 10 3 IPD06N03L K/W A tp = 7.6s 10 s DS = V /I 10 0 D ID DS (on ) 10 2 Z thJC 100 s 10 -1 R D = 0.50 10 10 1 1 ms -2 0.20 0.10 0.05 10 ms DC 10 -3 single pulse 0.02 0.01 10 0 -1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-01-17 IPD06N03L 5 Typ. output characteristic I D = f (VDS); Tj=25C parameter: t p = 80 s 120 IPD06N03L 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 19 IPD06N03L Ptot = 150W i h VGS [V] a 2.6 b 2.8 A 100 90 80 16 d e f g RDS(on) c d e 3.0 3.2 3.4 3.6 3.8 4.5 10.0 14 12 10 8 6 ID 70 60 50 40 30 20 10 g f g fh i h e i d 4 c b a 2 0 0 VGS [V] = d 3.2 e f 3.4 3.6 g 3.8 h i 4.5 10.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 10 20 30 40 50 60 70 A 85 VDS 7 Typ. transfer characteristics I D= f ( VGS ); V DS 2 x ID x R DS(on)max parameter: t p = 80 s 60 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: gfs 90 A 50 45 S 70 60 50 40 30 20 10 0 0 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 4 V VGS g fs ID 40 20 40 60 80 100 A 130 ID Page 5 2003-01-17 IPD06N03L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 A, V GS = 10 V IPD06N03L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.5 14 12 11 V VGS(th) 1mA RDS(on) 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 140 C 1.5 98% 1 typ 85A 0.5 200 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 IPD06N03L A pF Ciss 10 2 C 10 3 Coss IF 10 1 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2003-01-17 IPD06N03L 13 Typ. avalanche energy EAS = f (T j) par.: I D = 20 A, V DD = 25 V, R GS = 25 260 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: I D=10 mA 36 IPD06N03L mJ V 220 E AS 180 160 140 120 100 80 60 40 V(BR)DSS 200 34 33 32 31 30 29 28 20 0 25 45 65 85 105 125 145 C 185 Tj 27 -60 -20 20 60 100 140 C 200 Tj 14 Typ. gate charge VGS = f (Q Gate) parameter: I D = 25 A pulsed 16 V IPD06N03L 12 V GS 10 0.2 VDS max 0.5 VDS max 8 6 0.8 VDS max 4 2 0 0 10 20 30 40 50 60 nC 75 Q Gate Page 7 2003-01-17 IPD06N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-01-17 |
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