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 IPP04N03L IPB04N03L OptiMOS(R) Buck converter series
Feature
* N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 3.9 80
P- TO220 -3-1
V m A
* Logic Level * Excellent Gate Charge x RDS(on) product (FOM)
* Superior thermal resistance
* 175C operating temperature * Avalanche rated * dv/dt rated * Ideal for fast switching buck converter
Type IPP04N03L IPB04N03L
Package
Ordering Code
Marking 04N03L 04N03L
P- TO220 -3-1 Q67042-S4108 P- TO263 -3-2 Q67042-S4107
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current1)
TC=25C 1)
Value 80 80
Unit A
ID
Pulsed drain current
TC=25C
I D puls EAS EAR dv/dt VGS Ptot T j , Tstg
320 60 18 6 20 188 -55... +175 55/175/56 kV/s V W C mJ
Avalanche energy, single pulse
ID=55A, VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/s, Tjmax=175C
Gate source voltage Power dissipation
TC=25C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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IPP04N03L IPB04N03L
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
Symbol min. RthJC RthJA -
Values typ. 0.51 max. 0.8 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, I D=1mA
Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = VDS
ID = 130 A
Zero gate voltage drain current
V DS=30V, V GS=0V, Tj=25C V DS=30V, V GS=0V, Tj=125C
A 0.01 10 1 1 100 100 nA m 4.9 4.6 3.6 3.2 6.2 5.9 4.2 3.9
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, ID=45A V GS=4.5V, ID=45A, SMD version
Drain-source on-state resistance4)
V GS=10V, ID=45A V GS=10V, ID=45A, SMD version
1Current limited by bondwire ; with an R thJC = 0.8K/W the chip is able to carry I D= 165A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2
2003-01-17
IPP04N03L IPB04N03L
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, I F=80A VR =-V, IF=lS, diF /dt=100A/s
Symbol
Conditions min.
Values typ. 23 2930 1150 270 1.9 12.7 20 54.2 18.9 max. -
Unit
g fs Ciss Coss Crss RG t d(on) tr t d(off) tf
V DS2*I D*RDS(on)max, ID=80A V GS=0V, V DS=25V, f=1MHz
11.5 -
S
3900 pF 1520 420 19 30 81.3 28.3 ns
V DD=15V, VGS=10V, ID=20A, RG=2.2
Q gs Q gd Qg Q oss
V DD=15V, ID=40A
-
9.9 23 41.8 40.4 3.2
12.4 nC 35 52 50 nC V
V DD=15V, ID=40A, V GS=0 to 5V V DS=15V, ID=40A, V GS=0V
V(plateau) V DD=15V, ID=40A
IS
TC=25C
-
0.9 50 61
80 320 1.2 62 76
A
V ns nC
Page 3
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IPP04N03L IPB04N03L
1 Power dissipation Ptot = f (TC)
200
IPP04N03L
2 Drain current ID = f (TC) parameter: V GS 10 V
IPP04N03L
90
W
A
160 140 120 100
70 60 50 40
P tot
80 30 60 40 20 0 0 100 120 140 160 C 190 20 10 0 0
20
40
60
80
ID
20
40
60
80
100 120 140 160 C 190
TC
TC
3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 C
10
3 IPP04N03L
4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T
10 1
IPP04N03L
K/W
D
A
= V
DS
DS (on )
/I
tp = 30.0s
10 0
ID
R
10 2
100 s
ZthJC
10 -1
10 -2
1 ms
D = 0.50 0.20
10
1
10 ms
10
-3
0.10 0.05
DC 10 -4 single pulse
0.02 0.01
10 0 -1 10
10
0
10
1
V
10
2
10 -5 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2003-01-17
IPP04N03L IPB04N03L
5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 80 s
190
IPP04N03L Ptot = 188W
6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS
IPP04N03L
14
A
160 140
j i h
VGS [V] a 2.5 b c d 2.8 3.0 3.3 3.5 3.8 4.0 4.3 4.5 10.0
12 11
e
f
g
RDS(on)
10 9 8 7 6 5 4
j h i
ID
120 100 80 60 40 20 0 0
g
e f g
f
h i j
e d
3 2 VGS [V] =
e f 3.5 3.8 g 4.0 h i j 4.3 4.5 10.0
c b a
1 4
0.5
1
1.5
2
2.5
3
3.5
V
5
0 0
20
40
60
80
100
A
140
VDS
ID
7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s
160
8 Typ. forward transconductance g fs = f(ID); Tj=25C parameter: gfs
35
A
S
120 25 100
gfs
20 15 10 5 0.5 1 1.5 2 2.5 3 3.5
ID
80
60
40
20
0 0
V 4.5 VGS
0 0
20
40
60
80 100 120 140 160
A 200 ID
Page 5
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IPP04N03L IPB04N03L
9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 45 A, VGS = 10 V
10
IPP04N03L
10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS
2.5
8
V V GS(th)
650A
RDS(on)
7 6 5 4 3 2 1 0 -60
C
1.5
98%
130A
typ
1
0.5
-20
20
60
100
140
200
0 -60
-20
20
60
100
C
180
Tj
Tj
11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz
10
4
12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s
10 3
IPP04N03L
A
pF
Ciss
10 2
C
Coss
10 3
IF
10 1
Crss
Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%)
10 2 0
5
10
15
20
V
30
10 0 0
0.4
0.8
1.2
1.6
2
2.4 V
3
VDS
Page 6
VSD
2003-01-17
IPP04N03L IPB04N03L
13 Typ. avalanche energy EAS = f (Tj) par.: ID = 55 A, VDD = 25 V, RGS = 25
60
15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA
IPP04N03L
36
V
mJ
V(BR)DSS
34 33 32
E AS
40
30 31 20 30 29 10 28 0 25 27 -60
45
65
85
105
125
145
C 185 Tj
-20
20
60
100
140
C
200
Tj
14 Typ. gate charge VGS = f (QGate ) parameter: ID = 40 A pulsed
IPP04N03L
16
V
12
VGS
10
0.2 VDS max
8
0.5 VDS max 0.8 VDS max
6
4
2
0 0
20
40
60
80
nC
120
Q Gate
Page 7
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IPP04N03L IPB04N03L
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 8
2003-01-17


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