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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1720
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management application of notebook computers.
FEATURES
* Low On-Resistance RDS(on)1 = 25.0 m MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 m MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 38.0 m MAX. (VGS = 4.0 V, ID = 4.0 A) * Low Ciss : Ciss = 800 pF TYP. * Built-in G-S Protection Diode * Small and Surface Mount Package (Power SOP8)
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA1720G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, All terminals are connected.)
Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse)
Note1
Note2
VDSS VGSS ID(DC) ID(pulse) PT IAS EAS Tch Tstg
30 20 8 32 2.0 8.0 6.4 150 -55 to + 150
V V A A W A mJ C C
Total Power Dissipation (TA = 25 C) Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature
Note3 Note3
Notes 1. PW 10 s, Duty cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 V
2
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G13888EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998, 1999
PA1720
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VGS = 4.0 V, ID = 4.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VDS = 30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 4.0 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 8 A VDD = 24 V VGS = 10 V IF = 8 A, VGS = 0 V IF = 8 A, VGS = 0 V di/dt = 100 A/ s 800 250 96 20 80 40 40 14 2.3 3.6 0.86 30 40 1.5 3.0 MIN. TYP. 20.0 25.5 29.0 2.0 7.0 10 10 MAX. 25.0 33.0 38.0 2.5 UNIT m m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G13888EJ2V0DS00
PA1720
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80
Mounted on ceramic substrate of 2 1200 mm x 2.2 mm
0
20
40
60
80
100 120 140 160
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 ID(DC) = 32 A
ID - Drain Current - A
PW = 10
PW
RD (V S(on) GS L = imit 10 ed V)
10
ID(DC) = 8 A
Remark Mounted on ceramic substrate of 1200 mm x 2.2 mm
2
0 s
= 1 m
10
PW =
s
PW
Po we rD iss
m s
= 10
0 m
1
s
ip at io n Li m
0.1 0.01
TA = 25 C Single Pulse 0.1 1
VDS - Drain to Source Voltage - V
ite
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100
d
10
100
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 62.5 C/W 10
1
0.1
Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Single Pulse
0.01 0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G13888EJ2V0DS00
3
PA1720
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
30
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
ID - Drain Current - A
10
ID - Drain Current - A
20
1
TA = 150C 75C 25C
-25C
VGS = 10 V 4.5 V 4.0 V
10
0.1 0
VDS = 10 V 1 2 3 4 5 6
0 0.0
0.4
0.8
1.2
1.6
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
|yfs| - Forward Transfer Admittance - S
100
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 80 Pulsed
10
TA = -25C 25C 75C 150C
ID = 4 A 8A
60
40
1
20
0.1 0.01
VDS =10 V Pulsed 0.1 1 10 100
0 0 5 10 15 VGS - Gate to Source Voltage - V
ID- Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 80 VGS = 4.0 V 60 4.5 V
VGS(off) - Gate to Source Cut-off Voltage - V
100
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA
2.0
5
40
1.0
10 V 20
0 0.1
1
10
100
0.0 -50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet G13888EJ2V0DS00
PA1720
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS = 10 V 0V 10
40 VGS = 4.0 V 30 4.5 V 10 V 20
1
10 -50
0
50
100
150
0.1 0.0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
di / dt = 100 A / s VGS = 0 V
1000
Ciss
100
Coss
100
10
Crss
10 0.01
0.1
1
10
100
1 0.1
1
10
100
VDS - Drain to Source Voltage - V
IF - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 16 14 30 VDD = 24 V 15 V 6V VGS 10 8 6 10 ID = 8 A 0 10 15 20 25 QG - Gate Charge - nC 4 2 0 0 VDS 5 12
VDS - Drain to Source Voltage - V
20
VGS - Gate to Source Voltage - V
Data Sheet G13888EJ2V0DS00
5
PA1720
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
SINGLE AVALANCHE ENERGY DERATING FACTOR 120 RG = 25 VDD = 15 V VGS = 20 V IAS 8 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
RG = 25 VDD = 15 V VGS = 20 V 0 V Starting Tch = 25C
100 80 60 40 20 0 25
0V
10
IAS = 8 A EAS = 6.4 mJ
1 10
100
1m
10m
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet G13888EJ2V0DS00
PA1720
PACKAGE DRAWING (Unit : mm)
Power SOP8
8 5 1 2, 3 4 5, 6, 7, 8 ; ; ; ; Non Connect Source Gate Drain
EQUIVALENT CIRCUIT
Drain
Gate
1 4 5.37 Max.
+0.10 -0.05
Body Diode
6.0 0.3 4.4 0.8
1.44
1.8 Max.
0.15
Gate Protection Diode
Source
0.05 Min.
0.5 0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10 -0.05
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.
Data Sheet G13888EJ2V0DS00
7
PA1720
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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