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 Rev. 2.1
SPN02N60C3
VDS @ Tjmax RDS(on) ID 650 3 0.4
SOT223
4
Cool MOSTM Power Transistor
Feature * New revolutionary high voltage technology * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances
V A
3 2 1
VPS05163
Type SPN02N60C3
Package SOT223
Ordering Code Q67040-S4553
Marking 02N60C3
Maximum Ratings Parameter Symbol ID Value Unit
Continuous drain current
TA = 25 C TA = 70 C
A 0.4 0.3
Pulsed drain current, tp limited by Tjmax
TA = 25 C Gate source voltage static
I D puls VGS VGS Ptot T j , T stg
2.2 20
30
V W C
Gate source voltage AC (f >1Hz)
Power dissipation, T A = 25C
1.8 -55... +150
Operating and storage temperature
Page 1
2004-03-01
Rev. 2.1
SPN02N60C3
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 1.8 A, Tj = 125 C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol min. RthJS RthJA 110 70 Values typ. 30 max. K/W Unit
Soldering temperature, 1.6 mm (0.063 in.) from case for 10s
Tsold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS
ID=80, VGS=VDS VDS=600V, VGS=0V, Tj=25C, Tj=150C
Values typ. 700 3 0.5 2.7 7.3 9 max. 3.9 600 2.1 -
Unit V
V(BR)DS VGS=0V, ID=0.25A
A 1 50 100 3 nA
Gate-source leakage current
IGSS
VGS=30V, VDS=0V VGS=10V, ID=1.1A, Tj=25C Tj=150C
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
f=1MHz, open Drain
Page 2
2004-03-01
Rev. 2.1
SPN02N60C3
Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter
Transconductance Input capacitance Output capacitance Reverse transfer capacitance
Symbol g fs Ciss Coss Crss
Conditions min.
V DS2*I D*RDS(on)max,
ID=0.3A
Values typ. 1.75 200 90 4 8.1 15.7 6 3 68 12 max. 70 30 -
Unit S pF
V GS=0V, V DS=25V, f=1MHz
Effective output capacitance,2) Co(er) energy related Effective output capacitance,3) Co(tr) time related
Turn-on delay time Rise time Turn-off delay time Fall time
V GS=0V, V DS=0V to 480V
pF
td(on) tr td(off) tf
V DD=350V, V GS=0/10V,
ID=0.4A, RG=25
-
ns
Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg
VDD=420V, ID=0.4A
-
1.6 3.8 9.5 5.5
12.5 -
nC
VDD=420V, ID=0.4A, VGS=0 to 10V
V(plateau) VDD=420V, ID=0.4A
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 2C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V
o(er) oss DS
DSS.
3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
Page 3
2004-03-01
Rev. 2.1
SPN02N60C3
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt
VGS=0V, IF=IS VR=420V, IF=IS , diF/dt=100A/s
Symbol IS ISM
Conditions min.
TA=25C
Values typ. 0.85 200 1.3 9 max. 0.4 2.2 1.05 350 200 -
Unit A
V ns C A A/s
Page 4
2004-03-01
Rev. 2.1
SPN02N60C3
1 Power dissipation Ptot = f (TA)
1.9
SPN02N60C3
2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T A=25C
10 1
W
A
1.6 1.4
Ptot
10 0
1 0.8 0.6 0.4 0.2 0 0 10 -2 0 10
1 2 3
ID
1.2
10 -1
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1ms DC
20
40
60
80
100
120
C
160
10
10
TA
10 V VDS
3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T
10
1
4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS
5.5
K/W
A
4.5
V20 V10 V7 V6.5
V6
10 0
ZthJC
4
ID
10 -1
3.5 3 2.5
V5.5
10 -2
D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
2 1.5 1
V4.5 V5
0.5 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10
V4
s
10
1
0 0
2
4
6
8
10
12
14
16
tp
V 20 VDS
Page 5
2004-03-01
Rev. 2.1
SPN02N60C3
5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS
3
6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS
20
A
2.4 2.1
20V 8V 7V 6.5V
6V
4V
4.5V
5V 5,5V
16
RDS(on)
5.5V
ID
14 12 10
6V
1.8 1.5 1.2 0.9 0.6 0.3 0 0
5V
8
4.5V 4V
6 4 2 0
6.5V 7V 8V 20V
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4
5
10
15
V VDS
25
A ID
3
7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.3 A, VGS = 10 V
17
SPN02N60C3
8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s
5.5
14
A
25C
4.5 4
RDS(on)
12 10
ID
3.5 3
150C
8 6 4 2 0 -60 98% typ
2.5 2 1.5 1 0.5 -20 20 60 100
C
180
0 0
2
4
6
8
10
12
14
16
Tj
Page 6
V 20 VGS
2004-03-01
Rev. 2.1
SPN02N60C3
9 Typ. gate charge VGS = f (QGate) parameter: ID = 0.4 A pulsed
16
V
SPN02N60C3
10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s
10 1
SPN02N60C3
A
12
VGS
0.2 VDS max 0.8 VDS max
10 0
8
6
IF
10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 12 nC 10 -2 0
10
4
2
0 0
2
4
6
8
10
15
0.4
0.8
1.2
1.6
2
2.4 V
3
QGate
VSD
11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C par.: VDS=380V, VGS=0/+13V, ID=0.4A
1000
12 Typ. switching time t = f (RG ), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, ID=0.4 A
400
ns A/s
di/dt(on)
300
di/dt
600
t
250
td(off)
200 400
150
100 200 50
di/dt(off)
tf td(on) tr
0 0
40
80
120
160
200
RG
280
0 0
40
80
120
160
200
260 RG
Page 7
2004-03-01
Rev. 2.1
SPN02N60C3
13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS=380V, VGS=0/+13V, RG =25
90
14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=0.4A
85000
tdoff
ns
70 60
V/ns dv/dt
45000
t
50 40
dv/dt(on)
30 20 10 0 0.25
tf
25000
tdon tr
dv/dt(off)
0.5
0.75
1
1.25
1.5
A ID
2
5000 0
40
80
120
160
200
RG
280
15 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, RG =25
0.01
16 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, ID=0.4A
0.0425
mWs
mWs
0.008
0.0325
E
E
0.007
Eon
0.0275
Eon
0.006
0.0225
0.005
0.0175
0.004
Eoff
0.0125
Eoff
0.003
0.0075
0.002 0.25
0.5
0.75
1
1.25
1.5
A ID
2
0.0025 0
40
80
120
160
200
RG
280
Page 8
2004-03-01
Rev. 2.1
SPN02N60C3
17 Drain-source breakdown voltage V(BR)DSS = f (Tj)
720
SPN02N60C3
18 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz
10 4
V
pF
V(BR)DSS
680 660 640 620 600
10 3
Ciss
C
10 2
10 1 580 560 540 -60 10 0 0
Crss
Coss
-20
20
60
100
C
180
100
200
300
400
V
600
Tj
VDS
19 Typ. Coss stored energy Eoss=f(VDS)
1.8
J
1.4
Eoss
1.2 1 0.8 0.6 0.4 0.2 0 0
100
200
300
400
V
600
VDS
Page 9
2004-03-01
Rev. 2.1
SPN02N60C3
Definition of diodes switching characteristics
Page 10
2004-03-01
Rev. 2.1
SPN02N60C3
SOT223
A
6.5 0.2 3 0.1 0.1 max
1.6 0.1
B
7 0.3
15max
4
1 0.7 0.1
2
3 2.3 4.6
0.5 min
0.28 0.04
0.25
M
A
0.25
Page 11
M
B
2004-03-01
3.5 0.2
+0.2 acc. to DIN 6784
Rev. 2.1
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved.
SPN02N60C3
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 12
2004-03-01


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