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| Rev. 2.1 SPN02N60C3 VDS @ Tjmax RDS(on) ID 650 3 0.4 SOT223 4 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances V A 3 2 1 VPS05163 Type SPN02N60C3 Package SOT223 Ordering Code Q67040-S4553 Marking 02N60C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TA = 25 C TA = 70 C A 0.4 0.3 Pulsed drain current, tp limited by Tjmax TA = 25 C Gate source voltage static I D puls VGS VGS Ptot T j , T stg 2.2 20 30 V W C Gate source voltage AC (f >1Hz) Power dissipation, T A = 25C 1.8 -55... +150 Operating and storage temperature Page 1 2004-03-01 Rev. 2.1 SPN02N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 1.8 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol min. RthJS RthJA 110 70 Values typ. 30 max. K/W Unit Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 C Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=80, VGS=VDS VDS=600V, VGS=0V, Tj=25C, Tj=150C Values typ. 700 3 0.5 2.7 7.3 9 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=0.25A A 1 50 100 3 nA Gate-source leakage current IGSS VGS=30V, VDS=0V VGS=10V, ID=1.1A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2004-03-01 Rev. 2.1 SPN02N60C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=0.3A Values typ. 1.75 200 90 4 8.1 15.7 6 3 68 12 max. 70 30 - Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance,2) Co(er) energy related Effective output capacitance,3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 480V pF td(on) tr td(off) tf V DD=350V, V GS=0/10V, ID=0.4A, RG=25 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=420V, ID=0.4A - 1.6 3.8 9.5 5.5 12.5 - nC VDD=420V, ID=0.4A, VGS=0 to 10V V(plateau) VDD=420V, ID=0.4A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 2C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2004-03-01 Rev. 2.1 SPN02N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt VGS=0V, IF=IS VR=420V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TA=25C Values typ. 0.85 200 1.3 9 max. 0.4 2.2 1.05 350 200 - Unit A V ns C A A/s Page 4 2004-03-01 Rev. 2.1 SPN02N60C3 1 Power dissipation Ptot = f (TA) 1.9 SPN02N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T A=25C 10 1 W A 1.6 1.4 Ptot 10 0 1 0.8 0.6 0.4 0.2 0 0 10 -2 0 10 1 2 3 ID 1.2 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1ms DC 20 40 60 80 100 120 C 160 10 10 TA 10 V VDS 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 5.5 K/W A 4.5 V20 V10 V7 V6.5 V6 10 0 ZthJC 4 ID 10 -1 3.5 3 2.5 V5.5 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 2 1.5 1 V4.5 V5 0.5 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 V4 s 10 1 0 0 2 4 6 8 10 12 14 16 tp V 20 VDS Page 5 2004-03-01 Rev. 2.1 SPN02N60C3 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 3 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 20 A 2.4 2.1 20V 8V 7V 6.5V 6V 4V 4.5V 5V 5,5V 16 RDS(on) 5.5V ID 14 12 10 6V 1.8 1.5 1.2 0.9 0.6 0.3 0 0 5V 8 4.5V 4V 6 4 2 0 6.5V 7V 8V 20V 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 5 10 15 V VDS 25 A ID 3 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.3 A, VGS = 10 V 17 SPN02N60C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 5.5 14 A 25C 4.5 4 RDS(on) 12 10 ID 3.5 3 150C 8 6 4 2 0 -60 98% typ 2.5 2 1.5 1 0.5 -20 20 60 100 C 180 0 0 2 4 6 8 10 12 14 16 Tj Page 6 V 20 VGS 2004-03-01 Rev. 2.1 SPN02N60C3 9 Typ. gate charge VGS = f (QGate) parameter: ID = 0.4 A pulsed 16 V SPN02N60C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 1 SPN02N60C3 A 12 VGS 0.2 VDS max 0.8 VDS max 10 0 8 6 IF 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 12 nC 10 -2 0 10 4 2 0 0 2 4 6 8 10 15 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C par.: VDS=380V, VGS=0/+13V, ID=0.4A 1000 12 Typ. switching time t = f (RG ), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, ID=0.4 A 400 ns A/s di/dt(on) 300 di/dt 600 t 250 td(off) 200 400 150 100 200 50 di/dt(off) tf td(on) tr 0 0 40 80 120 160 200 RG 280 0 0 40 80 120 160 200 260 RG Page 7 2004-03-01 Rev. 2.1 SPN02N60C3 13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS=380V, VGS=0/+13V, RG =25 90 14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=0.4A 85000 tdoff ns 70 60 V/ns dv/dt 45000 t 50 40 dv/dt(on) 30 20 10 0 0.25 tf 25000 tdon tr dv/dt(off) 0.5 0.75 1 1.25 1.5 A ID 2 5000 0 40 80 120 160 200 RG 280 15 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, RG =25 0.01 16 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, ID=0.4A 0.0425 mWs mWs 0.008 0.0325 E E 0.007 Eon 0.0275 Eon 0.006 0.0225 0.005 0.0175 0.004 Eoff 0.0125 Eoff 0.003 0.0075 0.002 0.25 0.5 0.75 1 1.25 1.5 A ID 2 0.0025 0 40 80 120 160 200 RG 280 Page 8 2004-03-01 Rev. 2.1 SPN02N60C3 17 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPN02N60C3 18 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 V pF V(BR)DSS 680 660 640 620 600 10 3 Ciss C 10 2 10 1 580 560 540 -60 10 0 0 Crss Coss -20 20 60 100 C 180 100 200 300 400 V 600 Tj VDS 19 Typ. Coss stored energy Eoss=f(VDS) 1.8 J 1.4 Eoss 1.2 1 0.8 0.6 0.4 0.2 0 0 100 200 300 400 V 600 VDS Page 9 2004-03-01 Rev. 2.1 SPN02N60C3 Definition of diodes switching characteristics Page 10 2004-03-01 Rev. 2.1 SPN02N60C3 SOT223 A 6.5 0.2 3 0.1 0.1 max 1.6 0.1 B 7 0.3 15max 4 1 0.7 0.1 2 3 2.3 4.6 0.5 min 0.28 0.04 0.25 M A 0.25 Page 11 M B 2004-03-01 3.5 0.2 +0.2 acc. to DIN 6784 Rev. 2.1 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPN02N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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