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'99.7.13 LOW NOISE 150mA LDO REGULATOR R1121N SERIES s OUTLINE The R1121N Series are voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ONresistance and high ripple rejection by CMOS process. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1121N Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs are SOT-23-5 (Mini-mold) package, high density mounting of the ICs on boards is possible. s FEATURES Ultra-Low Supply Current.................................................TYP. 35A Standby Mode ...................................................................TYP. 0.1A Low Dropout Voltage ........................................................TYP. 0.2V (IOUT = 100mA) High Ripple Rejection .......................................................TYP. 70db (f = 1kHz) Low Temperature-Drift Coefficient of Output Voltage .....TYP. 100ppm/C Excellent Line Regulation .................................................TYP. 0.05%/V High Accuracy Output Voltage..........................................2.0% Small Package ..................................................................SOT-23-5 (Mini-mold) Output Voltage ..................................................................Stepwise setting with a step of 0.1V in the range of 1.5V to 5.0V is possible. Built-in chip enable circuit (2 Types; A: active "L", B: active "H") Pinout ................................................................................Similar to the TK112, TK111 s APPLICATIONS Power source for cellular phones such as GSM, CDMA and various kind of PCSs. Power source for domestic appliances such as cameras, VCRs and camcorders. Power source for battery-powered equipment. s BLOCK DIAGRAM R1121NXX1A R1121NXX1B 3 VDD 1 VOUT 3 VDD 1 VOUT Vref CE 4 Current Limit GND 2 CE 4 Vref Current Limit GND 2 Rev.1.11 -1- s SELECTION GUIDE The output voltage, the active type, the packing type, and the taping type for the ICs can be selected at the user's request. The selection can be made by designating the part number as shown below : R1121XXX1X-XX ab c Code a b c Part Number Contents Setting Output Voltage (VOUT) : Stepwise setting with a step of 0.1V in the range of 1.5V to 5.0V is possible. Designation of Active Type : A : active "L" type B : active "H" type Designation of Taping Type : Ex. TR, TL (refer to Taping Specifications; TR type is the standard direction.) s PIN CONFIGURATION SOT-23-5 5 4 NC (mark side) VOUT GND CE VDD 1 2 3 s PIN DESCRIPTION Pin No. 1 2 3 4 5 Symbol VOUT GND VDD CE or CE NC Description Output pin Ground Pin Input Pin Chip Enable Pin No Connection Rev.1.11 -2- s ABSOLUTE MAXIMUM RATINGS Symbol VIN VCE VOUT PD Topt Tstg Item Input Voltage Input Voltage (CE or CE Pin) Output Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Rating 9 -0.3 ~ VIN+0.3 -0.3~ VIN+0.3 250 -40 ~ 85 -55 ~ 125 Unit V V V mW C C s ELECTRICAL CHARACTERISTICS q R1121NXX1A Symbol VOUT IOUT VOUT/IOUT VDIF ISS Istandby VOUT/VIN RR VIN VOUT/T Ilim RPU VCEH VCEL en Item Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-up Resistance CE Input Voltage "H" CE Input Voltage "L" Output Noise Topt = 25C Conditions MIN. TYP. MAX. Unit VIN = Set VOUT+1V VOUT VOUT V 1mA IOUT 30mA x0.98 x1.02 refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT+1V 12 40 mV 1mA IOUT 80mA refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT+1V 35 70 A VIN = VCE = Set VOUT+1V 0.1 1.0 A Set VOUT+0.5V VIN 8V 0.05 0.20 %/V IOUT = 30mA f = 1KHz, Ripple 0.5Vp-p 70 dB VIN = Set VOUT+1V 8 V ppm IOUT = 30mA 100 /C -40C Topt 85C VOUT = 0V 50 mA 2.5 5 10 M 1.5 VIN V 0 0.25 V BW = 10Hz ~ 100kHz 30 Vrms Rev.1.11 -3- q R1121NXX1B Symbol VOUT IOUT VOUT/IOUT VDIF ISS Istandby VOUT/VIN RR VIN VOUT/T Ilim RPD VCEH VCEL en Item Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-down Resistance CE Input Voltage "H" CE Input Voltage "L" Output Noise Topt=25C Conditions MIN. TYP. MAX. Unit VIN = Set VOUT+1V VOUT VOUT V 1mA IOUT 30mA x0.98 x1.02 refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT+1V 12 40 mV 1mA IOUT 80mA refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT+1V 35 70 A VIN = Set VOUT+1V 0.1 1.0 A VCE = GND Set VOUT+0.5V VIN 8V 0.05 0.20 %/V IOUT = 30mA f = 1KHz, Ripple 0.5Vp-p 70 dB VIN = Set VOUT+1V 8 V ppm IOUT = 30mA 100 /C -40C Topt 85C VOUT = 0V 50 mA 2.5 5 10 M 1.5 VIN V 0 0.25 V BW = 10Hz ~ 100kHz 30 Vrms q ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Output Voltage VOUT (V) 1.5 VOUT 1.7 1.8 VOUT 5.0 Topt = 25C Output Current IOUT (mA) Conditions MIN. 100 VIN - VOUT = 1.0V 150 Topt = 25C Output Voltage VOUT (V) 1.5 1.6 1.7 1.8 VOUT 1.9 2.0 VOUT 2.4 2.5 VOUT 2.7 2.8 VOUT 3.3 3.4 VOUT 5.0 Dropout Voltage VDIF (V) Conditions MIN. TYP. 0.5 0.4 0.3 0.60 IOUT = 100mA 0.35 0.24 0.20 0.17 MAX. 1.40 0.70 0.35 0.30 0.26 Note :When set Output Voltage is equal or less than 2.0V, VIN should be equal or more than 2.0V. Rev.1.11 -4- s OPERATION R1121NXX1A R1121NXX1B 3 VDD 1 VOUT 3 VDD 1 VOUT R1 Vref CE 4 Current Limit R2 GND CE 4 Vref Current Limit R1 R2 GND 2 2 In these ICs, fluctuation of Output Voltage, VOUT is detected by Feed-back Registers, R1 and R2, and the result is compared with a reference voltage by Error Amplifier, so that a constant voltage is output. A current limit circuit for protection at short mode and a chip enable circuit are included. Rev.1.11 -5- s TEST CIRCUITS CE 4 CE 4 IN VDD 3 VOUT R1121Nxx1B Series 1 OUT IOUT 2.2F IN ISS VDD 3 VOUT R1121Nxx1B Series 1 OUT 2.2F 2 0.1F GND 2 0.1F GND Standard test Circuit Supply current Test Circuit Fig.1 Standard test Circuit CE 4 Fig.2 Supply Current Test Circuit CE 4 IN VDD 3 VOUT R1121Nxx1B Series 1 OUT IOUT IN VDD 3 VOUT R1121Nxx1B Series 1 OUT P.G 2 GND 2 1F GND I1 I2 Ripple Rejection, Line Transient Response Test Circuit Load Transient Response Test Circuit Fig.3 Ripple Rejection, Line Transient Response Test Circuit Fig.4 Load Transient Response Test Circuit Rev.1.11 -6- s TYPICAL CHARACTERISTICS 1) Output Voltage vs. Output Current R1121N181B Topt = 25C 2.0 1.8 R1121N301B Topt = 25C 3.5 5.0V 3.0 Output Voltage VOUT (V) 2.8V Output Voltage VOUT (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 3.8V 4.0V 2.5 2.0 3.5V 1.5 VIN = 3.3V 1.0 0.5 2.3V VIN = 2.1V 100 200 300 400 Output Current IOUT (mA) 500 0.0 0 100 200 300 400 Output Current IOUT (mA) 500 R1121N401B Topt = 25C 5.0 4.5 Output Voltage VOUT (V) 6.0 5.0 R1121N501B Topt = 25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 6.0V 5.0V 4.5V VIN = 4.3V Output Voltage VOUT (V) 4.0 7.0V 6.0V 5.5V 4.0 3.0 2.0 VIN = 5.3V 1.0 0.0 200 300 400 Output Current IOUT (mA) 500 0 100 200 300 400 Output Current IOUT (mA) 500 2) Output Voltage vs. Input Voltage R1121N181B Topt = 25C 2.0 1.9 Output Voltage VOUT (V) R1121N301B Topt = 25C 3.1 IOUT=1mA Output Voltage VOUT (V) IOUT = 1mA 1.8 1.7 1.6 1.5 1.4 30mA 1.3 50mA 1.2 1.0 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 3.0 2.9 2.8 2.7 30mA 2.6 2.5 2.0 50mA 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 Rev.1.11 -7- R1121N401B Topt = 25C 4.5 IOUT = 1mA OUtput Voltage VOUT (V) R1121N501B Topt = 25C 5.5 5.0 4.0 Output Voltage VOUT (V) IOUT = 1mA 4.5 4.0 3.5 30mA 3.0 50mA 2.5 2.0 3.5 30mA 3.0 50mA 2.5 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 3) Dropout Voltage vs. Output Current R1121N181B 1.20 1.00 Dropout Voltage VDIF (V) R1121N301B 0.40 0.35 Dropout Voltage VDIF (V) Topt = 85C 0.30 25C 0.25 0.20 -40C 0.15 0.10 0.05 0.00 Topt = 85C 0.80 0.60 0.40 -40C 0.20 0.00 0 50 100 Output Current IOUT (mA) 150 25C 0 50 100 Output Current IOUT (mA) 150 R1121N401B 0.40 0.35 Dropout Voltage VDIF (V) R1121N501B 0.40 0.35 0.30 Topt = 85C 0.25 0.20 0.15 0.10 0.05 0.00 -40C 25C Dropout Voltage VDIF (V) 0.30 Topt = 85C 0.25 25C 0.20 0.15 0.10 0.05 0.00 0 50 100 Output Current IOUT (mA) 150 -40C 0 50 100 Output Current IOUT (mA) 150 Rev.1.11 -8- 4) Output Voltage vs. Temperature R1121N181B 1.90 1.88 Output Voltage VOUT (V) R1121N301B 3.10 3.08 VIN = 4.0V IOUT = 30mA VIN = 2.8V IOUT = 30mA Output Voltage VOUT (V) 1.86 1.84 1.82 1.80 1.78 1.76 1.74 1.72 1.70 -50 -25 0 25 50 Temperature Topt (C) 75 100 3.06 3.04 3.02 3.00 2.98 2.96 2.94 2.92 2.90 -50 -25 0 25 50 Temperature Topt (C) 75 100 R1121N401B VIN = 5.0V IOUT = 30mA 4.10 4.08 Output Voltage VOUT (V) Output Voltage VOUT (V) 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 R1121N501B VIN = 6.0V IOUT = 30mA 4.06 4.04 4.02 4.00 3.98 3.96 3.94 3.92 3.90 -50 -25 0 25 50 Temperature Topt (C) 75 100 4.90 -50 -25 0 25 50 Tempareture Topt (C) 75 100 5) Supply Current vs. Input Voltage R1121N181B Topt = 25C 60 50 60 50 Supply Current ISS (A) R1121N301B Topt = 25C Supply Current ISS (A) 40 30 20 10 0 1.0 40 30 20 10 0 1.0 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 Rev.1.11 -9- R1121N401B Topt = 25C 60 50 60 50 R1121N501B Topt = 25C Supply Current ISS (A) 40 30 20 10 0 1.0 Supply Current ISS (A) 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 40 30 20 10 0 1.0 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 6) Supply Current vs. Temperature R1121N181B VIN = 2.8V 50 45 50 45 R1121N301B VIN = 4.0V Supply Current ISS (A) Supply Current ISS (A) 0 50 Temperature Topt (C) 100 40 35 30 25 20 -50 40 35 30 25 20 -50 0 50 Temperature Topt (C) 100 R1121N401B VIN = 5.0V 50 45 50 45 R1121N501B VIN = 6.0V Supply Current ISS (A) 40 35 30 25 20 -50 Supply Current ISS (A) 0 50 Temperature Topt (C) 100 40 35 30 25 20 -50 0 50 Temperature Topt (C) 100 Rev.1.11 - 10 - 7) Dropout Voltage vs. Set Output Voltage R1121Nxx1B Topt = 25C 1.0 0.9 Dropout Voltage VDIF (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.0 IOUT = 150mA IOUT = 100mA IOUT = 50mA IOUT = 30mA IOUT = 10mA 2.0 3.0 4.0 Set Output Voltage Vreg (V) 5.0 8) Ripple Rejection vs. Frequency R1121N181B VIN = 2.8VDC + 0.5Vp-p COUT = tantal 1.0F 80 70 80 70 R1121N181B VIN = 2.8VDC + 0.5Vp-p COUT = tantal 2.2F Ripple Rejection RR (dB) 60 50 40 30 20 10 0 0.1 1 10 Frequency f (kHz) 100 IOUT = 50mA IOUT = 1mA IOUT = 30mA Ripple Rejection RR (dB) 60 50 40 30 20 10 0 0.1 1 10 100 Frequency f (kHz) IOUT = 50mA IOUT= 1mA IOUT = 30mA R1121N301B VIN = 4.0VDC + 0.5Vp-p COUT = tantal 1.0F 80 70 80 70 R1121N301B VIN = 4.0VDC + 0.5Vp-p COUT = tantal 2.2F Ripple Rejection RR (dB) Ripple Rejection RR (dB) 60 50 40 30 20 10 0 0.1 1 10 Frequency f (kHz) 100 IOUT = 50mA IOUT = 1mA IOUT = 30mA 60 50 40 30 20 10 0 0.1 1 10 100 Frequency f (kHz) IOUT = 50mA IOUT = 1mA IOUT = 30mA Rev.1.11 - 11 - R1121N401B VIN = 5.0VDC + 0.5Vp-p COUT = tantal 1.0F 80 R1121N401B VIN = 5.0VDC + 0.5Vp-p COUT = tantal 2.2F 80 70 Ripple Rejection RR (dB) 70 Ripple Rejection RR (dB) 60 50 40 30 20 10 0 0.1 1 10 Frequency f (kHz) 100 IOUT = 50mA IOUT= 1mA IOUT = 30mA 60 50 40 30 20 10 0 0.1 1 10 100 Frequency f (kHz) IOUT = 50mA IOUT = 1mA IOUT = 30mA 9) Ripple Rejection vs. Input Voltage (DC bias) R1121N301B IOUT = 1mA COUT = 2.2F 80 70 Ripple Rejection RR (dB) Ripple Rejection RR (dB) R1121N301B IOUT = 10mA COUT = 2.2F 80 70 60 50 40 30 20 10 0 3.1 3.2 f = 1kHz f = 10kHz 3.3 3.4 Input Voltage VIN (V) 3.5 f = 400Hz 60 50 40 30 20 10 0 3.1 3.2 3.3 3.4 Input Voltage VIN (V) 3.5 f = 1kHz f = 10kHz f = 400Hz R1121N301B IOUT = 50mA COUT = 2.2F 80 70 f = 400Hz f = 1kHz f = 10kHz Ripple Rejection RR (dB) 60 50 40 30 20 10 0 3.1 3.2 3.3 Input Voltage VIN (V) 3.4 3.5 Rev.1.11 - 12 - 10) Line Transient Response R1121N301B IOUT=30mA tr=tf=5 s COUT=Tantalum 1.0F 3.4 6 OUtput Voltage VOUT (V) Input Voltage 3.2 3.1 3.0 2.9 2.8 0 20 40 60 TIme t (s) 80 100 120 Output Voltage 4 3 2 1 0 R1121N301B IOUT=30mA tr=tf=5 s COUT=Tantalum 2.2F 3.4 6 Output Voltage VOUT (V) Input Voltage 3.2 3.1 3.0 2.9 2.8 0 20 40 60 Time t (s) 80 100 120 Output Voltage 4 3 2 1 0 R1121N301B IOUT=30mA tr=tf=5 s COUT=Tantalum 6.8F 3.4 6 Output Voltage VOUT (V) Input Voltage 3.2 3.1 Output Voltage 3.0 2.9 2.8 0 20 40 60 Time t (s) 80 100 120 2 1 0 4 3 Rev.1.11 - 13 - Input Voltage VIN (V) 3.3 5 Input Voltage VIN (V) 3.3 5 Input Voltage VIN (V) 3.3 5 11) Load Transient Response R1121N301B VIN=4V CIN=Tantalum 1F COUT=Tantalum 1.0F 3.4 150 100 Output Current 3.2 3.1 3.0 2.9 2.8 0 2 4 6 8 10 12 Time t (s) 14 16 18 20 50 0 Output Voltage -50 -100 -150 Output Voltage VOUT (V) 3.3 R1121N301B VIN=4V CIN=Tantalum 1F COUT=Tantalum 2.2F 3.4 150 100 Output Current 3.2 3.1 Output Voltage 3.0 2.9 2.8 0 2 4 6 8 10 12 Time t (s) 14 16 18 20 -50 -100 -150 50 0 Output Voltage VOUT (V) 3.3 R1121N301B VIN=4V CIN=Tantalum 1F COUT=Tantalum 6.8F 3.4 150 100 Output Current 3.2 3.1 3.0 2.9 2.8 0 2 4 6 8 10 12 Time t (s) 14 16 18 20 50 0 Output Voltage -50 -100 -150 Rev.1.11 Output Voltage VOUT (V) 3.3 - 14 - Output Current IOUT (mA) Output Current IOUT (mA) Output Current IOUT (mA) s TECHNICAL NOTES When using these ICs, be sure to consider following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) of which is in the range described as follows: 4 CE Vout 1 Ceramic Capacitor ESR Iout Ceramic Capacitor 1F Spectrum S.A. Analyzer R1121N301B 3 Vin Vin 2 GND Measuring Circuit for white noise ; R1121N301B The relations between IOUT (Output Current) and ESR of Output Capacitor are shown below. The conditions when the white noise level is under 40V (Avg.) are marked as the hatched area in the graph. (note: When the additional ceramic capacitors are connected to the Output Pin with Output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) Ceramic 1.0F 100.0 100.0 R1121N301B Ceramic 2.2F 10.0 ) ESR ( ) 10.0 ESR ( 1.0 1.0 0.1 0 50 100 150 Output Current IOUT (mA) 0.1 0 50 100 Output Current IOUT (mA) 150 Make VDD and GND line sufficient. When the impedance of these is high, there is a case to pick up the noise or not to work correctly. Connect the capacitor with a capacitance of 1F or more between VDD and GND as close as possible. Set external components, especially Output Capacitor, as close as possible to the ICs and make wiring shortest. Rev.1.11 - 15 - s TYPICAL APPLICATION CE CE IN VDD R1121NXX1A VOUT OUT IN VDD R1121Nxx1B VOUT OUT Cap. GND Cap. Cap. GND Cap. Rev.1.11 - 16 - |
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