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| Data Sheet No.PD 60157-H IPS521G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features * * * * * * * Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Product Summary Rds(on) V clamp I Limit V open load 100m (max) 50V 10A 3V Description The IPS521G is a fully protected five terminal high side switch with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7oC below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Truth Table Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out H H L L H H L H H L (limiting) L L H L (cycling) L L Dg H L H H L L L L Typical Connection + VCC + 5v 15K Status feedback Rdg Rin Output pull-up resistor Package Vcc Dg Logic control Out In Gnd Logic signal Load 8 Lead SOIC Logic Gnd Load Gnd www.irf.com 1 IPS521G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25oC unless otherwise specified). Symbol Parameter Vout Voffset Vin Iin, max Vdg Idg, max Isd cont. Maximum output voltage Maximum Input voltage Maximum positive IN current Maximum diagnostic output voltage Maximum diagnostic output current Diode max. permanent current (1) (rth = 125 o C/W) Isd pulsed Diode max. pulsed current (1) ESD1 Electrostatic discharge voltage (Human Body) ESD2 Pd Tj max. Vcc max. Electrostatic discharge voltage (Machine Model) Maximum power dissipation (rth=125oC/W) Max. storage & operating junction temp. Maximum Vcc voltage (1) Min. Vcc-50 -0.3 -5 -0.3 -1 -- -- -- -- -- -40 -- Max. Vcc+0.3 Vcc+0.3 5.5 10 5.5 10 1.4 10 4 0.5 1 +150 50 Units V Test Conditions Maximum logic ground to load ground offset Vcc-50 mA V mA A C=100pF, R=1500, kV C=200pF, R=0, L=10H W o C V Thermal Characteristics Symbol Parameter Rth1 Rth2 Thermal resistance with standard footprint Thermal resistance with 1" square footprint Min. -- -- Typ. & Max. Units Test Conditions a a o C/W 8 Lead SOIC Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Vcc VIH VIL Iout Tc=85oC Rin Rdg Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current (TAmbient = 85oC, Tj = 125oC, Rth = 100oC/W) Recommended resistor in series with IN pin Recommended resistor in series with DG pin Min. 5.5 4 -0.3 -- 4 10 Max. 35 5.5 0.9 1.6 6 20 Units V A k (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com IPS521G Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Rds(on) @Tj=25o C Min. -- -- -- 5.5 50 -- -- -- -- -- -- -- 0 -- -- 1 -- 0.1 Typ. 80 80 125 -- 55 56 0.9 13 0.6 20 0.4 50 -- -- 2.2 1.9 70 0.25 Max. Units Test Conditions 100 100 160 35 -- 65 1.2 50 2 -- -- 120 25 10 3 -- 200 0.5 V A V Vin = 5V Vin = 5V, Iout = 5A m Vin = 5V, Iout = 2.5A Vin = 5V, Iout = 5A ON state resistance Tj = 25oC ON state resistance @ Vcc = 6V ON state resistance Tj = 150oC Operating voltage range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Output leakage current Output leakage current Diagnostic output leakage current IN high threshold voltage IN low threshold voltage On state IN positive current Input hysteresis Rds(on) (V cc=6V) Rds(on) @Tj=150oC Vcc oper. V clamp 1 V clamp 2 Vf Icc off Icc on Icc ac Vdgl Ioh Iol Idg leakage V A mA A V A Id = 10mA (see Fig.1 & 2) Id = Isd (see Fig.1 & 2) Id = 2.5A, Vin = 0V Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vout = 6V Vout = 0V Vdg = 5.5V Vih Vil Iin, on In hyst. Switching Electrical Characteristics Vcc = 14V, Resistive Load = 2.8, Tj = 25oC, (unless otherwise specified). Symbol Parameter Tdon Turn-on delay time Tr1 Rise time to Vout = Vcc - 5V Tr2 Rise time Vcc - 5V to Vout = 90% of Vcc dV/dt (on) Turn ON d V/dt Eon Turn ON energy Tdoff Turn-off delay time Tf Fall time to Vout = 10% of Vcc dV/dt (off) Turn OFF d V/dt Eoff Turn OFF energy Tdiag Vout to Vdiag propagation delay Min. a a -- a -- -- -- a -- -- Typ. Max. Units Test Conditions 10 25 130 0.7 1500 35 16 0.9 250 5 40 60 200 2 -- 70 50 3 -- 15 s See figure 3 V/s J s V/s J s See figure 4 See figure 6 www.irf.com 3 IPS521G Protection Characteristics Symbol Parameter Ilim Internal current limit T sd+ Over-temp. positive going threshold TsdOver-temp. negative going threshold V sc Short-circuit detection voltage (3) Vopen load Open load detection threshold (3) Referenced to Vcc Min. 7 -- -- 2 2 Typ. 10 165 158 3 3 Max. Units Test Conditions 14 -- -- 4 4 A oC oC V V Vout = 0V See fig. 2 See fig. 2 See fig. 2 Functional Block Diagram All values are typical VCC 50V Over temperature 165C 158C Tj 62 V Charge pum p 2.7 V IN 7V 200 K Level 2.2 V shift driver - DG 7V 40 + Open load 3V Current limit + 10 A + Short-circuit - 3V GN D VOUT Lead Assignments Vcc Vcc Vcc Vcc 1 GND IN DG OUT 8 Lead SOIC 4 www.irf.com IPS521G T clamp Vin Vin 5V 0V Iout limiting Ilim. T shutdown cycling Ids Iout ( + Vcc ) Out 0V T V clamp Tsd+ Tsd- ) (160 ( see Appl . Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram Vin Vcc 90% Vcc - 5V Vin dV/dt on Vout 10% Td on 90% Tr 1 Tr 2 E1(t) dV/dt off Vout 10% Iout2 E2 (t) Inductive load Iout1 Eon1 Resistive load Td off Tf Eon2 Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load Figure 4 - Switching times definition (turn-off) www.irf.com 5 IPS521G V in Dg Vcc IN Out Gnd + Vcc Vcc -Vsc Vin Vout L 14 V - V o ut Vol R V d ia g Iout Diag on blanking Diag off blanking T diag 5v 0v Rem : V load is negative during demagnetization Figure 5 - Active clamp test circuit Figure 6 - Diagnostic delay definitions 100 200% 150% 50 100% 0 0 5 10 15 20 25 30 35 50% -50 0 50 100 150 Figure 7 - Rds(on) (m) Vs Vcc (V) Figure 8 - Normalized Rds(on) (m) Vs Tj (oC) 6 www.irf.com IPS521G 100 10 1 50 0.1 0 0 2 4 6 8 10 Figure 9 - Rds(on) (m) Vs Iout (A) Figure 10 - Max. Iout (A) Vs Load Inductance (uH) 5 10 0 rth SO8 std footprint 4 10 1inch footprint Rthja= 60C/W 3 1 2 Std. footprint Rthja= 100C/W 0 ,1 1 0 25 50 75 100 125 150 0 ,0 1 Figure 11 - Max load current (A) Vs Tamb (oC) Figure 12 - Transient Thermal Impedance (oC/W) Vs Time (s) www.irf.com 7 IPS521G 15 3500 3000 Resistive load 10 2500 2000 Eon Eoff 5 1500 1000 500 0 -50 0 50 100 150 0 0 1 2 3 4 5 6 7 Figure 13 - Ilim (A) Vs Tj (oC) Figure 14 - Eon, Eoff (J) Vs Iout (A) 10000 150 125 I=Imax vs Induct.(see fig.10) 1000 Diag on blanking 100 100 I=1.5A 75 10 50 1 25 Diag off blanking 1E+01 1E+02 1E+03 1E+04 1E+05 1E+06 0.1 0 0 1 2 3 Figure 15 - Eon (J) Vs Load Inductance (H) (see Fig. 3) Figure 16 - Diag Blanking time (S) Vs Iout (A) (resistive load - see Fig. 6) 8 www.irf.com IPS521G 1.00E-03 1.00E-04 1.00E-05 1.00E-06 0 5 10 15 20 25 30 35 Figure 17 - Icc (mA) Vs Vcc (V) Case Outline - 8 Lead SOIC (MS-012AA) 01-0021 09 4/11/2000 www.irf.com 9 |
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