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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PPC2715T
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
FEATURES
* Low power consumption * High power gain * Input and output matching * Super small package : 15 mW (VCC = 3.4 V, ICC = 4.5 mA) TYP. : 19 dB TYP. @ f = 0.5 GHz : 50 : : 6 pin mini mold
* Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
ORDERING INFORMATION
PART NUMBER PACKAGE 6 pin mini mold SUPPLYING FORM Embossed tape 12 mm wide. Pin 1, 2, 3 face to perforation side of the tape.
PPC2715T-E3
EQUIVALENT CIRCUIT
VCC OUT (Top View)
PIN CONNECTIONS
(Bottom View)
3 2 1
C1L
IN
4 5 6 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC
4 5 6
3 2 1
GND
Caution: Electro-static sensitive devices
Document No. P12432EJ2V0DS00 (2nd edition) (Previous No. IC-2952) Date Published March 1997 N Printed in Japan
(c)
1993
PPC2715T
ABSOLUTE MAXIMUM RATINGS (TA = +25 C)
Supply Voltage Total Circuit Current Power Dissipation Operating Temperature Storage Temperature Input Power VCC ICC PD Topt Tstg Pin 4.1 7.5 280* 40 to +85 55 to +150 0 V mA mW C C dBm
* Mounted on 50 u 50 u 1.6 mm epoxy glass PWD (TA = +85 C)
RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage SYMBOL VCC MIN. 3.06 TYP. 3.4 MAX. 3.74 UNIT V
ELECTRICAL CHARACTERISTICS (TA = +25 C, VCC = 3.4 V, ZS = ZL = 50 :)
PARAMETER Circuit Current Power Gain Maximum Output Level Noise Figure Upper Limit Operating Frequency SYMBOL ICC GP PO(sat) NF fU 0.9 MIN. 3.3 16 9 TYP. 4.5 19 6 4.5 1.2 6.0 MAX. 5.7 23 UNIT mA dB dBm dB GHz TEST CONDITIONS No Signal f = 0.5 GHz f = 0.5 GHz, Pin = 10 dBm f = 0.5 GHz 3 dB down below flat gain f = 0.1 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 to 0.6 GHz
Isolation Input Return Loss Output Return Loss Gain Flatness
ISL RLin RLout
28 12 5
33 17 8 1.0
dB dB dB dB
'GP
2
PPC2715T
TEST CIRCUIT
VCC 1 000 pF C3 6 50 IN 1 000 pF C1 1 4 C2 1 000 pF 50 OUT
2, 3, 5
EXAMPLE OF APPLICATION CIRCUIT
VCC 1 000 pF C3 6 50 IN 1 000 pF C1 1 4 C4 1 000 pF C5 1 000 pF R1 50 to 200 2, 3, 5 To stabilize operation, please connect R1, C5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 1 6 4 C2 1 000 pF 50 OUT 1 000 pF C6
2, 3, 5
Capacitors for VCC, input and output pins 1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output pins. Bypass capacitor for VCC pin is intended to minimize VCC pin's ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 S fZs).]
3
PPC2715T
TYPICAL CHARACTERISTICS (TA = o25 C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE 10 9 10 VCC = 3.4 V 9 CIRCUIT CURRENT vs. OPERATING TEMPERATURE
ICC - Circuit Current - mA
ICC - Circuit Current - mA
0.5 2 3 4 5
8 7 6 5 4 3 2 1 0 1 1.5 2.5 3.5 4.5
8 7 6 5 4 3 2 -40 -20 0 20 40 60 80 100
VCC - Supply Voltage - V NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 25 30 VCC = 3.74 V
Topt - Operating Temperature - C
INSERTION POWER GAIN vs. FREQUENCY VCC = 3.4 V
GP - Insertion Power Gain - dB
GP - Insertion Power Gain - dB
GP 20 VCC = 3.4 V 15
6
25
TA = -40 C 25 C
NF - Noise Figure - dB
VCC = 3.06 V VCC = 3.06 V NF
20 85 C 15
5
10
5 VCC = 3.4 V VCC = 3.74 V 0.3 f - Frequency - GHz 1.0 2.0
10
4
0 0.1
5 0.1
0.3 f - Frequency - GHz
1.0
2.0
ISOLATION vs. FREQUENCY 0 VCC = 3.4 V 0
INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY VCC = 3.4 V
RLin - Input Return Loss - dB RLout - Output Return Loss - dB
RLin -10
ISL - Isolation - dB
-10
-20
-20 RLout -30
-30
-40 0.1
0.3 f - Frequency - GHz
1.0
2.0
-40 0.1
0.3 f - Frequency - GHz
1.0
2.0
4
PPC2715T
OUTPUT POWER vs. INPUT POWER 15 f = 0.5 GHz 10 10 VCC = 3.4 V 15 OUTPUT POWER vs. INPUT POWER VCC = 3.4 V f = 0.5 GHz TA = 85 C TA = 25 C
PO - Output Power - dBm
PO - Output Power - dBm
5 0 -5 -10 -15 -20 -25
3.74 V
5 0 -5 -10 -15 -20 -25 TA = -40 C
3.06 V
TA = -40 C
TA = 85 C
-30 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 Pin - Input Power - dBm
0
-30 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 Pin - Input Power - dBm
0
5
PO(sat) - Saturated Output Power - dBm
Pin = -10 dBm
0
VCC = 3.4 V 3.74 V
IM3 - 3rd Order Intermodulation Distortion - dBc
SATURATED OUTPUT POWER vs. FREQUENCY
THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE -60 f1 = 0.500 GHz f2 = 0.502 GHz -50 -40 -30 -20 3.4 V -10 0 -40 3.06 V VCC = 3.74 V
-5
3.6 V -10
-15 0.1
0.2
0.5 f - Frequency - GHz
1
2
-35
-30
-25
-20
-15
-10
-5
PO(each) - Output Power of Each Tone - dBm
5
0.1
0.2
0.1
0.3
0.2
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 0.4 REFLECTION COEFFCIENT IN 0.0TOR 3 OF 7 DEG 0.0 .46 4 NGLE 0 REE 0A 0.4 0 4 S -16 6 0.0 0.0 5 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 EN ITIV 40 ON 0 ER 4 MP 0. -1 EA CO
0.1 0.1
0.2
C
0. 4
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 FLECTION COEFFCIENT 0.4 RE 0.0TOR 3 6 IN DE 7 LE OF 0.0 4 GRE ANG 0.4 0.4 ES 0 160 4 - 6 0.0 0.0 5 15 0.4 5 0 .4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 ITIV NEN 40 0 ER 4 PO 0. -1 EA OM C
0.3
0.
4
0.
0.
4
-1
NE G
0.
.08
0.4 02 .08 0 00 .43 0. 07 30
NE G
8 0.0 2 0.4
5
E IV AT
(
-1
0
N
0.
5
20
0.6
-1 2
2 0.4 20 1 07 0. 3 4 0. 0 13
0
0.4 1 0.0 0.4 9 02 -1 .08 0 00 .43 0. 07 30
0
0.40 0.10
-11
0.40 0.10 -11 0
0.10 0.40 110
0.10 0.40 110
0.7
0.4 1 0.0 9
0.38 0.39 0.12 0.11 -100
-90
0.2
0.2
REACTANCE COMPONENT R ---- 0.2 ZO
-90
REACTANCE COMPONENT R ---- 0.2 ZO
1.0
90
1.0
0.2
1.0 1.0
0.38 0.39 0.12 0.11 -100
0.2
0.2
0.4
0.4
0.13 0.37
0.37 0.13
0.4
0.13 0.37
0.37 0.13
0.1 G
0.6
1.2
0.4
0.6
0.6
0.6
1.2
0.6
0.4
8
0.6
0.
0.8
0
0
1.
0.8
1.2
1.2
0.8
0.
0.
0.
1.4
0.2
1.4
8
1.
1.
0.36 0.04 -80
0.1 G
0.5 G
1.4
1.8 2.0
1.4
0.36 0.04 -80
0.15 0.35
0.35 0.15 -70
-70
0.35 0.15
0
0
4 0.3 6 0.1
4 0.3 6 0.1
-6
0.1 0.3 7 3
3 0.3 7 0.1
0.1
0
3 0.3 7
2.0
0.1 0.3 7 3
4.0 5.0
0
0.5 G
2.0
-6
-5
-5
32
0.
18
0.
32 18 0.
0
0.
3.
0
3.
4.0
4.0
6.0
6.0
10
20
10
50
20
50
0 .2
0
1 0 .2 9 0.2
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0.2 00 9 0.2 0.3 1 - 0.2 0 0
0 0.2 0 0.3
50
10
20
50
20
0 .3
0
30
30
20
6.0
20
10
19 0. 31 0.
40
-4
0
0. 0. 31 19
19 0. 31 0.
40
10
3.
1 0.2 9 0.2 30
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0.2 00 9 0.2 0.3 1 -3 0.2 0 0 0
-4
0
0. 0. 31 19
6
S22-FREQUENCY S11-FREQUENCY
WAVELE NG
S PARAMETER
WAVELE NG
0.2
0.3
0.3
C
0.
07
0.
4
E NC TA AC - JX- - RE --ZO E NC TA AC - JX- - RE --ZO
0.
)
0.2
5
O
( -Z-+-J-XTANCE CO ) MPO
E IV AT
0.3
(
0.4
)
0.2
43 0 13
( -Z-+-J-XTANCE CO ) MPO
O
N
5 0.
T EN
T EN
0.3
0 12
0
0.6
.09
0.4
9 0.0 1 0.4
0.4
0.6
0.6
1
0.7
0.7
0.5
0.5
0.7
(
(
0.8
0.8
0.6
0.8
0.6
0.8
0.11 0.39 100
0.11 0.39 100
)
0.7 0.8
0.9
0.9
)
0.7 0.8 0.9
0.9
0.9
0.12 0.38
0.12 0.38
0.9
90
1.0
0.2
0.4 0.4
1.0
0.4
0.6
0.6
0.8
8
0.2
8
1.
0
1.
0.14 0.36 80
0.14 0.36 80
1.6
0
1.
0
0
1.6 1.8 2.0
1.
0
1. 0
1.4
1.4
0.15 0.35
1.0 G
70
1.6
70
1.6
3.0
1.0 G
1.6
1.6
1.8
0.1 6 0.3 4
0.1 6 0.3 4
1.8
3.0
1.8
1.8
6 00
0.
6 00
2.0
2.0
4.0 5.0
50
0. 18 32
50
0. 0. 18 32
3.
0
0
10
4.0
4.0
6.0
50
50
PPC2715T
PPC2715T
6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm)
0.3 +0.1 -0.05 0.130.1
1
2.8 -0.3 1.5 -0.1
+0.2 +0.2
2
3
0 to 0.1 6 5 0.95 4 0.95 0.8 1.1 -0.1
+0.2
1.9 2.90.2
7
PPC2715T
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause abnormal oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the VCC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives.
PPC2715T
Recommended condition symbols IR35-00-3
Soldering method Infrared ray reflow
Soldering conditions Package peak temperature: 235 C, Hour: within 30 s. (more than 210 C), Time: 3 times, Limited days; no.* Package peak temperature: 215 C, Hour: within 40 s. (more than 200 C), Time: 3 times, Limited days: no.* Soldering tub temperature: less than 260 C, Hour: within 10 s. Time: 1 time, Limited days: no.* Pin area temperature: less than 300 C, Hour: within 3 s. Limited days: no.*
VPS
VP15-00-3
Wave soldering
WS60-00-1
Pin part heating
*: It is the storage days after opening a dry pack, the storage conditions are 25 C, less than 65 % RH. Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
8
PPC2715T
Illustration of evaluation board for the test circuit
2.8 1.2 1.2 0.4
9- 7.5 Through holes 15 2.5 2.5 2.5 2.5 3 3 2.5 2.5 2.5 2.5 7.5 7.5 5 5 22
10
10
0.75 1.2 0.2 4.8 7.5 15
0.2
4.8
IN
OUT
VCC
2
3
72- 0.5 Through holes
22 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 15
0.4
0.9
0.75 3.6 2.8 15
2
300.05 (Back side) (Surface)
Note (1) 30 u 30 u 0.4 mm double sided copper clad polyimide board. (2) Back side: GNDpattern (3) Solder plated on pattern : Through holes (4)
9
300.05
PPC2715T
[MEMO]
10
PPC2715T
[MEMO]
11
PPC2715T
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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