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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR540 NPN 9 GHz wideband transistor
Product specification Supersedes data of 1995 September 1999 Aug 23
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 70 C; note 1 IC = 40 mA; VCE = 8 V IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 10 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 10 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz Note 1. Ts is the temperature at the soldering point of the collector tab. open emitter RBE = 0 CONDITIONS MIN. - - - - 60 - - - - 12 - - - TYP. - - - - 120 0.6 9 14 7 13 1.3 1.9 2.1 The transistor is encapsulated in a plastic SOT23 envelope. PINNING
fpage
BFR540
3
PIN 1 2 3 base
DESCRIPTION Code: N29 emitter collector
1 Top view 2
MSB003
Fig.1 SOT23.
MAX. 20 15 120 500 250 - - - - - 1.8 2.4 -
UNIT V V mA mW pF GHz dB dB dB dB dB dB
1999 Aug 23
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 70 C; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN.
BFR540
MAX. 20 15 2.5 120 500 150 175
UNIT V V V mA mW C C
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER from junction to soldering point CONDITIONS see note 1 THERMAL RESISTANCE 260 K/W
1999 Aug 23
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 8 V IC = 40 mA; VCE = 8 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 10 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 10 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz PL1 ITO Vo Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM S 21 = 10 log --------------------------------------------------------- dB. 2 2 ( 1 - S 11 ) ( 1 - S 22 )
2
BFR540
MIN. - 60 - - - - - - 12 - - - - - -
TYP. MAX. UNIT - 120 2 0.9 0.6 9 14 7 13 1.3 1.9 2.1 21 34 550 50 250 - - - - - - - 1.8 2.4 - - - - pF pF pF GHz dB dB dB dB dB dB dBm dBm mV nA
output power at 1 dB gain compression third order intercept point output voltage (note 3)
IC = 40 mA; VCE = 8 V; RL = 50 ; Tamb = 25 C; f = 900 MHz note 2 IC = 40 mA; VCE = 8 V; ZL = ZS = 75 ; Tamb = 25 C
2. IC = 40 mA; VCE = 8 V; RL = 50 ; Tamb = 25 C; f = 900 MHz; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and f(2q-p) = 904 MHz. 3. dim = -60 dB (DIN 45004B); Vp = VO; Vq = VO -6 dB; f p = 795.25 MHz; VR = VO -6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz; preliminary data.
1999 Aug 23
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
600 1/2 page (Datasheet) P tot (mW) 400
MEA398 - 1
MRA687
handbook, halfpage
250
22 mm
hFE 200
150
100 200 50
0 0 50 100 150 Ts 200 ( o C)
0 10-2
10-1
1
10 I (mA) 102 C
VCE = 8 V.
Fig.3 Fig.2 Power derating curve.
DC current gain as a function of collector current.
handbook, halfpage
1.0 Cre (pF) 0.8
MRA688
handbook, halfpage
12
MRA689
fT (GHz) 8
VCE = 8V
0.6
VCE = 4V
0.4 4 0.2
0
0
4
8
VCB (V)
12
0 10-1
1
10
IC (mA)
102
IC = 0; f = 1 MHz.
Tamb = 25 C; f = 1 GHz.
Fig.4
Feedback capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
1999 Aug 23
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
BFR540
handbook, halfpage
25
MRA690
handbook, halfpage
25
MRA691
gain (dB) 20
gain (dB) 20
15
MSG
Gmax
15
GUM 10 10 Gmax GUM
5
5
0 0 20 40 IC (mA) 60
0 0 20 40 IC (mA) 60
VCE = 8 V; f = 900 MHz.
VCE = 8 V; f = 2 GHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRA692
MRA693
handbook, halfpage
50
handbook, halfpage
50
gain (dB) 40
GUM
gain (dB) 40 GUM MSG 30
30
MSG
20
20 Gmax Gmax
10
10
0 10
102
103
f (MHz)
104
0 10
102
103
f (MHz)
104
VCE = 8 V; Ic = 10 mA.
VCE = 8 V; Ic = 40 mA.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
1999 Aug 23
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
handbook, halfpage
5
MRA698
Fmin (dB) 4
20 Gass (dB) 15
handbook, halfpage
5
MRA699
Fmin (dB) 4
IC = 10 mA
40 mA
20 Gass (dB) 15
f = 900 MHz
Gass 3 10
3 Gass 2000 MHz 2 1000 MHz 900 MHz 500 MHz Fmin
1000 MHz 2000 MHz 10
5
2 40 mA Fmin
5
1
0
1
10 mA
0
0 1 10 IC (mA)
-5 102
0 102
103
f (MHz)
-5 104
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure and associated available gain as functions of collector current.
Fig.11 Minimum noise figure and associated available gain as functions of frequency.
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 pot. unst. region 0.2 Fmin = 1.3 dB OPT 180 stability circle 0.2 F = 3 dB 0 0.2 0.5 F = 1.5 dB F = 2 dB 5 1 2 5 0 0.4 0.2 0
5
-135
0.5 1
2
-45
MRA700
1.0
Zo = 50 . VCE = 8 V; IC = 10 mA; f = 900 MHz.
-90
Fig.12 Noise circle figure.
1999 Aug 23
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
handbook, full pagewidth
90 1.0 1 135 0.5 G = 5 dB Gmax = 7.8 dB MS 180 0 0.2 0.5 Fmin = 2.1 dB OPT 0.2 F = 2.5 dB F = 3 dB 0.5 F = 4 dB 2 1
MRA701
2
45
0.8 0.6
G = 7 dB
G = 6 dB 5
0.4 0.2
1
2
5
0
0
5
-135
-45 1.0
-90 Zo = 50 . VCE = 8 V; IC = 10 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
1999 Aug 23
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0
0.2
3 GHz
5
0.2
40 MHz
5
-135
0.5 1
2
-45
MRA694
1.0
VCE = 8 V; IC = 40 mA. Zo = 50 .
-90
Fig.14 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135
45
40 MHz
180 50 40 30 20 10
3 GHz
0
-135
-45
-90 VCE = 8 V; IC = 40 mA.
MRA695
Fig.15 Common emitter forward transmission coefficient (S21).
1999 Aug 23
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
handbook, full pagewidth
90
135
3 GHz
45
180 0.5
40 MHz 0.4 0.3 0.2 0.1
0
-135
-45
-90 VCE = 8 V; IC = 40 mA.
MRA696
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 3 GHz 40 MHz 1 2 5 0 0
0.2
5
0.2
5
-135
0.5 1
2
-45
MRA697
1.0
VCE = 8 V; IC = 40 mA. Zo = 50 .
-90
Fig.17 Common emitter output reflection coefficient (S22).
1999 Aug 23
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFR540
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Aug 23
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFR540
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 23
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
NOTES
BFR540
1999 Aug 23
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
NOTES
BFR540
1999 Aug 23
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
NOTES
BFR540
1999 Aug 23
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/03/pp16
Date of release: 1999
Aug 23
Document order number:
9397 750 06338

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