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May 2000
(R)
AS7C1026 AS7C31026
5V/3.3V 64Kx16 CMOS SRAM Features
* AS7C1026 (5V version) * AS7C31026 (3.3V version) * Industrial and commercial versions * Organization: 65,536 words x 16 bits * Center power and ground pins for low noise * High speed - 10/12/15/20 ns address access time - 5/6/8/10 ns output enable access time * Low power consumption: ACTIVE - 880 mW (AS7C1026) / max @ 12 ns - 396 mW (AS7C31026) / max @ 12 ns * Low power consumption: STANDBY - 28 mW (AS7C1026) / max CMOS I/O - 18 mW (AS7C31026) / max CMOS I/O * 2.0V data retention * Easy memory expansion with CE, OE inputs * TTL-compatible, three-state I/O * JEDEC standard packaging - 44-pin 400 mil SOJ - 44-pin 400 mil TSOP II - 48-ball 6 mm x 8 mm CSP mBGA * ESD protection 2000 volts * Latch-up current 200 mA
Logic block diagram
A0 A1 A2 A3 A4 A5 A6 A7 I/O0-I/O7 I/O8-I/O15
Pin arrangement
44-Pin SOJ, TSOP II (400 mil) VCC
64K x 16 Array
GND
Control circuit Column decoder
A8 A9 A10 A11 A12 A13 A14 A15
WE
UB OE LB CE
Selection guide
AS7C1026-12 AS7C1026-15 AS7C1026-20 AS7C31026-10 AS7C31026-12 AS7C31026-15 AS7C31026-20 Maximum address access time Maximum output enable access time Maximum operating current Maximum CMOS standby current
Shaded areas indicate preliminary information.
AS7C102
I/O buffer
A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC GND I/O4 I/O5 I/O6 I/O7 WE A15 A14 A13 A12 NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC
Row decoder
48-CSP mini Ball-Grid-Array Package 1 2 3 4 5 OE A0 A1 A2 A LB A3 A4 CE B I/O8 UB A6 I/O1 C I/O9 I/O10 A5 A7 I/O3 D VSS I/O11 NC E VDD I/O12 NC NC I/O4 F I/O14 I/O13 A14 A15 I/O5 G I/O15 NC A12 A13 WE H NC A8 A9 A10 A11
6 NC I/O0 I/O2 VDD VSS I/O6 I/O7 NC
Unit ns ns mA mA mA mA
10 5 AS7C1026 AS7C31026 AS7C1026 AS7C31026 - 125 - 3
12 6 160 110 3 3
15 8 150 100 3 3
20 10 140 90 3 3
DID 11-20011-A. 5/22/00
ALLIANCE SEMICONDUCTOR
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Copyright (c)1999 Alliance Semiconductor. All rights reserved.
AS7C1026 AS7C31026
(R)
Functional description
The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.
SRAM
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/8/10 ns are ideal for high-performance applications. When CE is high the devices enter stanby mode. The AS7C1026 is guaranteed not to exceed 28 mW power consumption in CMOS standby mode. The devices also offer 2.0V data retention. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0-I/O15 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/ O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. the chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The devices provide multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O0-I/O7, and UB controls the higher bits, I/O8-I/O15. All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply (AS7C1026) or 3.3V supply (AS7C31026). the device is packaged in common industry standard packages. Chip scale BGA packaging, easy to use in manufacturing, provides the smallest possible footprint. This 48-ball JEDEC-registered package has a ball pitch of 0.75 mm and external dimensions of 8 mm x 6 mm.
Absolute maximum ratings
Parameter Voltage on VCC relative to GND Voltage on any pin relative to GND Power dissipation Storage temperature (plastic) Ambient temperature with VCC applied AS7C1026 AS7C31026 Symbol Vt1 Vt1 Vt2 PD Tstg Tbias Min -0.50 -0.50 -0.50 - -65 -55 Max +7.0 +5.0 VCC +0.50 1.0 +150 +125 Unit V V V W
C C
- 20 mA DC current into outputs (low) IOUT Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stre ss rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this spec ification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE H L L L L L WE X H H H L L OE X L L L X X LB X L H L L L UB X H L L L H I/O0-I/O7 High Z DOUT High Z DOUT DIN DIN I/O8-I/O15 High Z High Z DOUT DOUT DIN High Z Mode Standby (ISB), ISBI) Read I/O0-I/O7 (ICC) Read I/O8-I/O15 (ICC) Read I/O0-I/O15 (ICC) Write I/O0-I/O15 (ICC) Write I/O0-I/O7 (ICC)
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ALLIANCE SEMICONDUCTOR
DID 11-20011-A. 5/22/00
AS7C1026 AS7C31026
(R)
CE L L L
WE L H X
OE X H X
LB H X H
UB L X H
I/O0-I/O7 High Z High Z
I/O8-I/O15 DIN High Z
Mode Write I/O8-I/O15 (ICC) Output disable (ICC)
SRAM SRAM
Key: H = High, L = Low, X = don't care.
Recommended operating conditions
Parameter Supply voltage Device AS7C1026 AS7C31026 (-10) AS7C31026 (12/15/20) AS7C1026 Input voltage commercial industrial AS7C31026 Symbol VCC VCC VCC VIH VIH VIL Ambient operating temperature
V
Min 4.5 3.15 3.0 2.2 2.0 -0.5 0 -40
Typ 5.0 3.3 3.3 - - - - -
Max 5.5 3.6 3.6 VCC + 0.5 VCC + 0.5 0.8 70 85
Unit V V V V V V C C
TA TA
IL min = -3.0V for pulse width less than t RC/2.
DC operating characteristics (over the operating range)
-10 Parameter Input leakage current Sym
| ILI |
-12
-15
-20 Min Max Unit - - - - - - - - - 2.4 1 1 A A
Test conditions VCC = Max VIN = GND to VCC VCC = Max CE = VIH, VOUT = GND to VCC VCC = Max, CE VIL outputs open, f = fMax = 1/tRC VCC = Max, CE VIL, outputs open, f = fMax = 1/tRC VCC = Max, CE VCC-0.2V, VIN GND + 0.2V or VIN VCC-0.2V, f = 0 IOL = 8 mA, VCC = Min IOH = -4 mA, VCC = Min
Device
Min Max Min Max Min Max - - 1 1 - 125 - 25 - 10 0.4 - - - - - - - - - - 2.4 1 1 160 110 40 25 10 10 0.4 - - - - - - - - - - 2.4 1 1 150 100 40 25 10 10 0.4 -
Output leakage | ILO | current Operating power supply current ICC
AS7C1026 AS7C31026 AS7C1026 AS7C31026 AS7C1026 AS7C31026
- - - - - - - 2.4
140 mA 90 40 25 10 10 0.4 - mA V V mA mA
Standby power supply current
ISB
ISB1 VOL VOH
Output voltage
Shaded areas indicate preliminary information.
Capacitance (f = 1MHz, Ta = 25 C, VCC = NOMINAL)
Parameter Input capacitance I/O capacitance
DID 11-20011-A. 5/22/00
Symbol CIN CI/O
Signals A, CE, WE, OE, LB, UB I/O
Test conditions VIN = 0V VIN = VOUT = 0V
Max Unit 5 7 pF pF
ALLIANCE SEMICONDUCTOR
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AS7C1026 AS7C31026
(R)
Read cycle (over the operating range)
-10 Parameter Symbol tRC tAA tACE tOE tOH tCLZ tCHZ tOLZ tBA tBLZ tBHZ tOHZ tPU tPD Min 10 - - - 4 0 - 0 - 0 - - 0 - Max - 10 10 5 - - 6 - 5 - 5 5 - 10 Read cycle time Address access time Chip enable (CE) access time Output enable (OE) access time Output hold from address change CE Low to output in low Z CE High to output in high Z OE Low to output in low Z Byte select access time Byte select Low to low Z Byte select High to high Z OE High to output in high Z Power up time Power down time
Shaded areas indicate preliminary information.
-12 Min 12 - - - 4 0 - 0 - 0 - - 0 - Max - 12 12 5 - - 6 - 6 - 6 6 - 12 15 - - - 4 0 - 0 - 0 - - 0 -
-15 Min Max - 15 15 8 - - 6 - 8 - 6 6 - 15 20 - - - 4 0 - 0 - 0 - - 0 -
-20 Min Max - 20 20 10 - - 8 - 10 - 8 8 - 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns 4,5 4,5 4, 5 4, 5 4, 5 5 4, 5 4, 5 4, 5 3 3 Notes
SRAM
Key to switching waveforms
Rising input Falling input Undefined output/don't care
Read waveform 1 (address controlled)
tRC Address Data OUT tOH Previous data valid tAA Data valid tOH
Read waveform 2 (OE, CE, UB, LB controlled)
tRC Address tAA OE tOLZ CE tLZ LB, UB tBLZ DataIN tBA Data valid tBHZ tACE tOHZ tHZ tOE tOH
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ALLIANCE SEMICONDUCTOR
DID 11-20011-A. 5/22/00
AS7C1026 AS7C31026
(R)
Write cycle (over the operating range)
-10 Parameter Write cycle time Chip enable (CE) to write end Address setup to write end Address setup time Write pulse width Address hold from end of write Data valid to write end Data hold time Write enable to output in high Z Output active from write end Byte select low to end of write
Shaded areas indicate preliminary information.
-12 - - - - - - - - 6 - - 12 8 9 0 8 0 6 0 - 1 8 - - - - - - - - 6 - -
-15 15 12 10 0 10 0 8 0 - 1 9 - - - - - - - - 6 - -
-20 Unit ns ns ns ns ns ns ns ns ns ns ns 5 4, 5 4, 5 Notes 20 13 12 0 12 0 10 0 - 2 12 - - - - - - - - 8 - -
Symbol Min Max Min Max Min Max Min Max tWC tCW tAW tAS tWP tAH tDW tDH tWZ tOW tBW 10 8 8 0 8 0 5 0 - 1 8
SRAM SRAM
Write waveform 1 (WE controlled)
tWC Address tCW CE tBW LB, UB tAS WE tDW Data IN tWZ Data OUT Data undefined Data valid tOW high Z tWC Address tAS CE tCW tAW tBW LB, UB tWP WE tDW DataIN tCLZ Data OUT high Z tWZ Data undefined high Z Data valid tOW tDH tWR tDH tAW tWP tWR
Write waveform 2 (CE controlled)
DID 11-20011-A. 5/22/00
ALLIANCE SEMICONDUCTOR
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AS7C1026 AS7C31026
(R)
Data retention characteristics (over the operating range)
Parameter VCC for data retention Data retention current Chip deselect to data retention time Operation recovery time Input leakage current Symbol VDR ICCDR tCDR tR |ILI| VCC = 2.0V CE VCC-0.2V VIN VCC-0.2V or VIN 0.2V Test conditions Min 2.0 - 0 tRC - Max - 500 - - 1 Unit V
A
SRAM
ns ns
A
Data retention waveform
Data retention mode VCC VCC tCDR CE VIH VDR VIH VDR 2.0V VCC tR
AC test conditions
Output load: see Figure B or Figure C, except as noted. Input pulse level: GND to 3.0V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V.
D OUT 90% 10% 2 ns 90% 10% 255W C(14) GND Figure B: 5V Output load Thevenin Equivalent: 168W +1.728V (5V and 3.3V) D OUT +5V 480W +3.0V GND D OUT 255W C(14) +3.3V 320W
Figure A: Input pulse
GND Figure C: 3.3V Output load
Notes
1 2 3 4 5 6 7 8 9 10 11 12 13 14 During V CC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. This parameter is sampled, but not 100% tested. For test conditions, see AC Test Conditions, Figures A, B, and C. These parameters are specified with C L = 5pF, as in Figures B or C. Transition is measured 500 mV from steady-state voltage. This parameter is guaranteed, but not tested. WE is High for read cycle. CE and OE are Low for read cycle. Address valid prior to or coincident with CE transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle. All write cycle timings are referenced from the last valid address to the first transitioning address. Not applicable. 2V data retention applies to commercial temperature range operation only. C=30pF, except all high Z and low Z parameters where C=5pF.
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ALLIANCE SEMICONDUCTOR
DID 11-20011-A. 5/22/00
AS7C1026 AS7C31026
(R)
Typical DC and AC characteristics
Normalized supply current ICC, I SB vs. supply voltage VCC Normalized supply current ICC, ISB vs. ambient temperature T a Normalized ISB1 (log scale) 625 25 5 1 0.2 0.04 -55 -10 35 80 125 Ambient temperature (C) Normalized supply current ISB1 vs. ambient temperature Ta
1.4 1.2 Normalized ICC, ISB 1.0 0.8 0.6 0.4 0.2
1.4 1.2 Normalized ICC, ISB
SRAM SRAM
ICC
1.0 0.8 0.6 0.4 0.2
ICC
VCC = VCC(NOMINAL)
ISB
ISB
0.0 MIN
NOMINAL Supply voltage (V) Normalized access time tAA vs. supply voltage VCC
MAX
0.0 -55
-10 35 80 125 Ambient temperature (C) Normalized access time tAA vs. ambient temperature T a
1.5 1.4 Normalized access time 1.3 1.2 1.1 1.0 0.9 0.8 MIN
1.5 1.4 Normalized access time
1.4 1.2
Normalized supply current ICC vs. cycle frequency 1/tRC, 1/tWC
VCC = VCC(NOMINAL) Ta = 25 C
Ta = 25 C
1.2 1.1 1.0 0.9 0.8 -55 -10 35 80 125 Ambient temperature (C) Output sink current IOL vs. output voltage VOL
Normalized ICC
1.3
VCC = VCC(NOMINAL)
1.0 0.8 0.6 0.4 0.2 0.0 0
NOMINAL Supply voltage (V) Output source current I OH vs. output voltage VOH
MAX
25 50 75 Cycle frequency (MHz)
100
140 Output source current (mA) 120 100 80 60 40 20 0 0
140 Output sink current (mA) 120 100 80 60 40 20 0 VCC 0
35 30 Change in tAA (ns) 25 20 15 10 5 0 VCC 0
Typical access time change tAA vs. output capacitive loading
VCC = VCC (NOMINAL) Ta = 25 C
VCC = VCC(NOMINAL) Ta = 25 C
VCC = VCC (NOMINAL)
Output voltage (V)
Output voltage (V)
250 500 750 Capacitance (pF)
1000
DID 11-20011-A. 5/22/00
ALLIANCE SEMICONDUCTOR
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AS7C1026 AS7C31026
(R)
Package dimensions
44434241403938 373635 343332 31 3029 2827 2625 24 23
c
44-pin TSOP II Min (mm)
Max (mm)
SRAM
44-pin TSOP II
E He
A A1 A2 0.05 0.95
0.30
1.2 1.05 0.45 18.54 10.29 11.96 0.60
1 2 3 4 5 6 7 8 9 10 11121314 1516 1718 1920 21 22
D l 0-5 A1 b e
b c D E He e l
0.127 (typical) 18.28
10.03
A
A2
11.56 0.40
0.80 (typical)
D e
44-pin SOJ
E1 E2
Pin 1
B A2 A A1 b c
Seating Plane
E2
A A1 A2 B b c D E E1 E2 e
44-pin SOJ 400 mL Min Max 0.128 0.148 0.025 - 1.105 1.115 0.026 0.032 0.015 0.020 0.007 0.013 1.120 1.130 0.370 NOM 0.395 0.405 0.435 0.445 0.050 NOM
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ALLIANCE SEMICONDUCTOR
DID 11-20011-A. 5/22/00
AS7C1026 AS7C31026
(R)
48-ball FBGA Bottom View 6 A B C D C1 F G H J Elastomer A B1 B SRAM DIE C 5 4 3 2 1 Ball A1 Top View
SRAM SRAM
Ball #A1 index
Side View E2 E
Detail View A D E2 E Die Die 0.3/Tp Y
E1
Minimum A B B1 C C1 D E E1 E2 Y
DID 11-20011-A. 5/22/00
Typical 0.75 8.00 3.75 8.00 5.25 0.35 - 0.68 0.25 -
Maximum - 8.10 - 8.10 - - 1.20 - 0.27 0.08
Notes 1 Bump counts: 48 (8 row x 6 column). 2 Pitch: (x,y) = 0.75 mm x 0.75 mm (typ). 3 Units: millimeters. 4 All tolerance are +/- 0.050 unless otherwise specified. 5 Typ: typical. 6 Y is coplanarity: 0.08 (max).
- 5.90 - 7.90 - - - - 0.22 -
ALLIANCE SEMICONDUCTOR
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AS7C1026 AS7C31026
(R)
Ordering codes
Package \ Access time Plastic SOJ, 400 mil Volt/Temp 5V commercial 5V industrial 5V commercial TSOP II, 18.4x10.2 mm 3.3V industrial 5V commercial CSP BGA, 8x6 mm
NA: not available.
10 ns NA NA NA NA NA NA
12 ns AS7C1026-12JC AS7C1026-12JI AS7C1026-12TC
15 ns AS7C1026-15JC AS7C1026-15JI AS7C1026-15TC
20 ns AS7C1026-20JC AS7C1026-20JI AS7C1026-20TC
SRAM
3.3V commercial AS7C31026-10JC AS7C31026-12JC AS7C31026-15JC AS7C31026-20JC 3.3V commercial AS7C31026-10TC AS7C31026-12TC AS7C31026-15TC AS7C31026-20TC AS7C31026-12TI AS7C31026-15TI AS7C31026-20TI AS7C1026-12BC AS7C1026-15BC AS7C1026-20BC
3.3V commercial AS7C31026-10BC AS7C31026-12BC AS7C31026-15BC AS7C31026-20BC 3.3V industrial AS7C31026-12BI AS7C31026-15BI AS7C31026-20BI
Part numbering system
AS7C SRAM prefix X Blank=5V CMOS 3=3.3V CMOS 1026 -XX X Package: J=SOJ 400 mil T=TSOP type 2, 18.4 x 10.2 mm B=CSP BGA, 8 x 6 mm C Temperature range, C=Commercial: 0 C to 70 C I=Industrial: -40 C to 85 C Device Access number time
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ALLIANCE SEMICONDUCTOR
DID 11-20011-A. 5/22/00

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