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(R)
STGD7NB60S
N-CHANNEL 7A - 600V DPAK Power MESHTM IGBT
TYPE STGD7NB60S
s
V CES 600 V
V CE(sat) < 1.6 V
IC 7A
s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
3 1
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL
s
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V ECR V GE IC IC ICM (*) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 o C Collector Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 600 20 20 15 7 60 55 0.44 -65 to 150 150
Unit V V V A A A W W/ o C
o o
C C
(*) Pulse width limited by safe operating area
November 1999
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STGD7NB60S
THERMAL DATA
R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 2.27 100 1.5
o o
C/W C/W o C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
Symbol V BR(CES) V BR(ECR) I CES IGES Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (V CE = 0) Test Conditions I C = 250 A IC = 1 mA V GE = 0 V GE = 0 T j = 25 o C T j = 125 o C V CE = 0 Min. 600 20 10 100 100 Typ. Max. Unit V V A A nA
V CE = Max Rating V CE = Max Rating V GE = 20 V
ON ()
Symbol V GE(th) V CE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V V GE = 15 V Test Conditions I C = 250 A IC = 3 A IC = 7 A IC = 7 A Min. 2.5 1 1.2 1.1 Typ. Max. 5 1.4 1.6 Unit V V V V
T j = 125 o C
DYNAMIC
Symbol gf s C ies C oes C res QG I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Latching Current Test Conditions V CE =25 V V CE = 25 V IC = 7 A f = 1 MHz V GE = 0 Min. 4 610 65 12 33 15 780 85 15 Typ. Max. Unit S pF pF pF nC A
V CE = 400 V V clamp = 480 V T j = 150 o C
IC = 7 A
V GE = 15 V R G =1k
SWITCHING ON
Symbol t d(on) tr (di/dt) on E on Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 1 K T j = 125 o C IC = 7 A R G = 1 K IC = 7 A V GE = 15 V Min. Typ. 0.7 0.46 8 0.4 Max. Unit s s A/s mJ
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STGD7NB60S
ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF
Symbol tc t r (v off ) tf E off (**) tc t r (v off ) tf E off (**) Parameter Test Conditions IC = 7 A V GE = 15 V Min. Typ. 2.2 1.2 1.2 3.5 3.8 1.2 1.9 5.3 Max. Unit s s s mJ s s s mJ
V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 100 Fall Time Turn-off Switching Loss V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 100 Fall Time T j = 125 o C Turn-off Switching Loss
IC = 7 A V GE = 15 V
(*) Pulse width limited by safe operating area () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
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STGD7NB60S
Output Characteristics Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
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STGD7NB60S
Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Off Losses vs Gate Resistance
Off Losses vs Temperature
Off Losses vs Collector Current
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STGD7NB60S
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
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STGD7NB60S
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A"
B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
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STGD7NB60S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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