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INTEGRATED CIRCUITS DATA SHEET TEA0675 Dual Dolby* B-type noise reduction circuit for playback applications Preliminary specification Supersedes data of July 1993 File under Integrated Circuits, IC01 1996 Jun 07 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications FEATURES * Dual noise reduction (NR) channels * Head pre-amplifiers * Reverse head switching * Automatic Music Search (AMS) * Music scan * Equalization with electronically switched time constants * Dolby reference level = 387.5 mV * 24 pins * Improved EMC behaviour. GENERAL DESCRIPTION The TEA0675 is a bipolar integrated circuit that provides two channels of Dolby B noise reduction for playback applications in car radios. It includes head and equalization amplifiers with electronically switchable time constants. Furthermore it includes electronically switchable inputs for tape drivers with reverse heads. QUICK REFERENCE DATA SYMBOL VCC ICC S+N ------------N supply voltage supply current signal plus noise-to-noise ratio PARAMETER - 78 MIN. 7.6 - 26 84 TYP. TEA0675 This device also detects pauses of music in the Automatic Music Search (AMS) scan mode, for applications with an intelligent controlled tape driver, or AMS-latch mode, for applications with a simple controlled tape driver. For both modes, the delay time can be fixed externally by a resistor. The device operates with power supplies in the range of 7.6 to 12 V, output overload level increasing with increase in supply voltage. Current drain varies with the following variables: supply voltage noise reduction on/off AMS on/off. Because of this current drain variation it is advisable to use a regulated power supply or a supply with a long time constant. MAX. 12 31 - UNIT V mA dB ORDERING INFORMATION TYPE NUMBER TEA0675 TEA0675T PACKAGE NAME SDIP24 SO24 DESCRIPTION plastic shrink dual in-line package; 24 leads (400 mil) plastic small outline package; 24 leads; body width 7.5 mm VERSION SOT234-1 SOT137-1 Remark Dolby*: Available only to licensees of Dolby Laboratories Licensing Corporation, San Francisco, CA94111, USA, from whom licensing and application information must be obtained. Dolby is a registered trade-mark of Dolby Laboratories Licensing Corporation. 1996 Jun 07 2 1996 Jun 07 handbook, full pagewidth BLOCK DIAGRAM 180 headswitch input 21 10 F 470 pF 330 k 1 k 470 pF 10 F AMS output NR 4.7 nF 120 s 10 nF 8.2 k 27 k 24 k 18 k 70 s ON 1.5 k EQ Philips Semiconductors 10 F 180 k 330 nF 15 nF OFF 100 nF output B 270 k 24 23 22 21 20 19 18 17 16 15 14 13 DOLBY B EQ AMP. AMS PROCESSOR LOGIC POWER SUPPLY PRE AMP. LATCH AND RISE TIME TEA0675 Dual Dolby* B-type noise reduction circuit for playback applications 3 DELAY TIME EQ AMP. 4 5 6 7 8 9 VCC PRE AMP. 1.5 k Rt ON 4.7 nF (1) LEVEL DETECTOR DOLBY B 1 2 3 10 11 12 270 k 24 k 8.2 k 10 nF 330 k 10 F 180 k 15 nF OFF AMS 100 F 470 pF 1 k 180 10 F 470 pF output A 330 nF 100 nF (1) Switched to VCC for AMS-scan mode. MED621 Preliminary specification TEA0675 Fig.1 Block and application diagram. Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications PINNING SYMBOL OUTA INTA CONTRA HPA SCA TD EQA EQFA VCC INA1 Vref INA2 INB2 HS INB1 GND EQFB EQB AMSEQ SCB HPB CONTRB INTB OUTB PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 DESCRIPTION output channel A integrating filter channel A control voltage channel A high-pass filter channel A side chain channel A delay time constant equalizing output channel A equalizing input channel A supply voltage input channel A1 (forward or reverse) reference voltage input channel A2 (reverse or forward) input channel B2 (reverse or forward) head switch input input channel B1 (forward or reverse) ground equalizing input channel B equalizing output channel B AMS output and EQ switch input side chain channel B high-pass filter channel B control voltage channel B integrating filter channel B output channel B Fig.2 Pin configuration. handbook, halfpage TEA0675 OUTA INTA CONTRA HPA SCA TD EQA EQFA VCC 1 2 3 4 5 6 24 OUTB 23 INTB 22 CONTRB 21 HPB 20 SCB 19 AMSEQ TEA0675 7 8 9 18 EQB 17 EQFB 16 GND 15 INB1 14 HS 13 INB2 MED622 INA1 10 Vref 11 INA2 12 1996 Jun 07 4 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications FUNCTIONAL DESCRIPTION Noise Reduction (NR) is enabled when pin HPB is open-circuit and disabled when connected to GND via an 1.5 k resistor. Dolby B noise reduction only operates correctly if 0 dB Dolby level is adjusted at 387.5 mV. Automatic Music Search (AMS) scan mode is enabled when pin HPA is connected to VCC via an 1.5 k resistor and disabled when pin HPA is open-circuit. Switching AMS on, internally NR is switched OFF simultaneously (see Figs 5 and 6 for principle timing in AMS-scan mode). AMS-latch mode is enabled when pin HPA is connected to GND via an 1.5 k resistor and disabled when pin HPA is open-circuit. Switching AMS on, NR is switched off internally. In this mode the device detects a pause level signal, when a music level signal has appeared first (see Figs 7 and 8 for principle timing). Furthermore a longer rise time constant is supplied for suppressing the detection of plops on tape. The output signal at pin AMSEQ in this mode may be applied to drive a tape driver logic circuit. TEA0675 Equalization time constant switching (70 s or 120 s) is achieved when pin AMSEQ is connected to GND via an 18 k resistor (120 s), or left open-circuit (70 s). This does not affect the AMS output signal during AMS mode (see Fig.1). Head switching is achieved when pin HS is connected (input IN2 active) to GND via a 27 k resistor, or left open-circuit (input IN1 active). The 10 F capacitor at pin HS sets the time constants for smooth switching. In AMS mode the signals of both channels are rectified and then added. This means, even if one channel signal appears inverted to the other channel, the normal AMS function is ensured. Pins HPB and HPA perform the function of a logic input for AMS, respectively NR mode switching in both channels and provide the frequency dependent feedback of the control chain amplifier in the corresponding channel. Thus it is important that no voltage is applied to pins HPB and HPA during NR on/AMS off mode, otherwise this will cause irregular NR characteristics. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Vi tshort Tstg Tamb Ves supply voltage input voltage (except pin 11) pin 11 (Vref) to VCC short-circuiting duration storage temperature operating ambient temperature electrostatic handling voltage for all pins note 1 note 2 Notes 1. Human body model (1.5 k, 100 pF). 2. Machine model (0 , 200 pF). PARAMETER CONDITIONS 0 -0.3 - -55 -40 -2 -500 MIN. MAX. 14 +VCC 5 +150 +85 +2 +500 V V s C C kV V UNIT 1996 Jun 07 5 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 CHARACTERISTICS VCC = 10 V; f = 20 Hz to 20 kHz; Tamb = 25 C; all levels are referenced to 387.5 mV (RMS) (0 dB) at test point (TP) pin OUTA or OUTB; see Fig.1; NR on/AMS off; EQ switch in the 70 s position; unless otherwise specified. SYMBOL VCC ICC m THD HR S+N ------------N PSRR fo PARAMETER supply voltage supply current channel matching total harmonic distortion (2nd and 3rd harmonic) headroom at output signal plus noise-to-noise ratio power supply ripple rejection frequency response; referenced to TP f = 1 kHz; Vo = 0 dB f = 10 kHz; Vo = 10 dB VCC = 7.6 V; THD = 1%; f = 1 kHz internal gain 40 dB, linear; CCIR/ARM weighted; decode mode; see Fig.25 Vi(rms) = 0.25 V; f = 1 kHz; see Fig.22 encode mode; see Fig.25 Vo = -25 dB; f = 0.2 kHz Vo = 0 dB; f = 1 kHz Vo = -25 dB; f = 1 kHz Vo = -25 dB; f = 5 kHz Vo = -35 dB; f = 10 kHz cs cc RL Gv channel separation crosstalk between active and inactive input load resistance at output voltage gain of pre-amplifier Vo = 10 dB; f = 1 kHz; see Fig.23 f = 1 kHz; Vo = 10 dB; NR off; see Fig.23 AC-coupled; f = 1 kHz; Vo = 12 dB; THD = 1% from pin INA1 or INA2 to pin EQFA and from pin INB1 or INB2 to pin EQFB; f = 1 kHz -22.9 -1.5 -17.8 -18.1 -24.4 57 70 10 29 -24.4 0 -19.3 -19.6 -25.9 63 77 - 30 -25.9 +1.5 -20.8 -21.1 -27.4 - - - 31 dB dB dB dB dB dB dB k dB CONDITIONS 7.6 - f = 1 kHz; Vo = 0 dB; NR off -0.5 - - 12 78 MIN. 10 26 - 0.08 0.15 - 84 TYP. 12 31 +0.5 0.15 0.3 - - MAX. UNIT V mA dB % % dB dB 52 57 - dB VI(offset)(DC) Ii(bias) REQ Ri Av DC input offset voltage input bias current equalization resistor input resistance head inputs open-loop amplification pin INA1 or INA2 to pin EQA and pin INB1 or INB2 to pin EQB f = 10 kHz f = 400 Hz - - 4.7 60 2 0.1 5.8 100 - 0.4 6.9 - mV A k k 80 104 86 110 - - dB dB 1996 Jun 07 6 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications SYMBOL Vref - VOUT PARAMETER DC output offset voltage at pins OUTA and OUTB DC output current output impedance equivalent input noise voltage (RMS value) AMS timing (DC level) DC offset voltage at pins OUTA and OUTB NR off; unweighted; f = 20 Hz to 20 kHz; Rsource = 0 resistor Rt connected to pin TD f = 900 MHz; Vi(rms)= 6 V; see Figs 26, 27 and 28 CONDITIONS NR off; pins INA1, INA2, INB1 and INB2 connected to Vref pin OUTA to ground pin OUTB to VCC Zo Vno(rms) MIN. -0.15 - TYP. TEA0675 MAX. +0.15 UNIT V IO -2 0.3 - - - - 80 0.7 - - 100 1.4 mA mA V VTD EMC VCC - 3 - - 40 VCC - V mV Switching thresholds VNROFF INROFF INRON VHPB(max) HPA (PIN 4) VAMSlON IAMSlON VAMSsON IAMSsON IAMSOFF VHPA(max) pin voltage output current pin voltage input current pin current maximum voltage AMS off AMS-scan on AMS-latch on 0.19VCC - 0.75VCC - - - 0.23VCC -0.7 0.77VCC 0.8 open - 0.25VCC -1 0.81VCC 1 200 0.75VCC V mA V mA nA V voltage at HPB (pin 21) output current input current maximum voltage NR off NR off NR on 0.19VCC - - - 0.23VCC -0.7 open - 0.25VCC -1 200 0.75VCC V mA nA V AMSEQ (PIN 19) AMS output (AMS mode) VOH IOH1 IOH2 td VOL IOL tr AM/P HIGH level output voltage HIGH level output current HIGH level output current minimum pulse width; delay time range LOW level output voltage LOW level output current minimum pulse width rise time signal level at output for AMS switching music to pause AMS-scan mode AMS-latch mode AMS mode; f = 10 kHz; note 2; see Fig.24 note 1 note 1 see Table 1 4 +10 +0.01 - - -0.02 2 130 -25 4.6 - - 5 -150 -1 V A mA ms V mA ms ms dB 23 to 160 - 0.1 - 6 150 -22 0.7 +1 10 170 -19 1996 Jun 07 7 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications SYMBOL AP/M PARAMETER signal level at output for AMS switching pause to music CONDITIONS AMS mode; f = 10 kHz; -24 MIN. TYP. -21 TEA0675 MAX. -18 UNIT dB EQ switch input (not AMS mode) IEQ70 IEQ120 IEQth VHSW IHSW VHSW(HIGH) VHSW(LOW) Notes 1. In AMS off mode, pin AMSEQ is HIGH level, the equalization time constant will be switched by pulling approximately 200 A out of pin AMSEQ. This means for the device connected to pin AMSEQ, a restriction of input current at HIGH level less than 200 A during AMS off; otherwise the selection of the equalization time constant is disabled and fixed at 120 s. If the connected devices consume more than 200 A, this input has to be disconnected in AMS off mode. (To ensure switching, the currents for the different switched modes are specified with a tolerance of 50 A in Chapter "Characteristics".) For an application with a fixed EQ time constant of 120 s the equalizing network may be applied completely external. Change 8.2 k resistor to 14 k the internal resistor REQ = 5.8 k is short-circuited by fixing the EQ switch input at the 70 s position (IEQ70). 2. The high speed of the tape (FF, REW) at the tape head during AMS mode causes a transformation of level and frequency of the originally recorded signal. It means a boost of signal level of approximately 10 dB and more for recorded frequencies from 500 Hz up to 4 kHz. So the threshold level of -22 dB corresponds to signal levels in Play Back (PB) mode of approximately -32 dB. The AMS inputs for each channel are pin SCA and pin SCB. As the frequency spectrum is transformed by a factor of approximately 10 to 30 due to the higher tape speed in FF, REW, the high-pass filter (4.7 nF/24 k) removes the effect of offset voltages but does not affect the music search function. In the application circuit (Fig.1) the frequency response of the system between tape heads input, e.g. pins INA2 and INB2, to the AMS input pins SCA and SCB is constant over the whole frequency range (see Fig.3). 3. To activate the inputs IN1, pin HS might be left open-circuit. In this event the DC level at pin HS is 0.775VCC. input current input voltage threshold current time constant 70 s active note 1 load current +90 to -90 A VHSW = 0 to VCC inputs INA1 and INB1 active; note 3 inputs INA2 and INB2 active -150 - - -170 1 2VCC - - -200 0.8VCC - + 0.5 - - - -250 - - +170 VCC 1 2VCC A A A V A V - 0.5 V time constant 120 s active -1000 HEAD SWITCHING pin voltage input current HIGH level pin voltage LOW level pin voltage 0 1996 Jun 07 8 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications Table 1 Blank delay time set by resistor Rt at pin TD RESISTOR VALUE Rt (k) 68 150 180 220 270 330 470 560 680 820 1000 General note DELAY TIME td TYP. (ms) 23 42 48 56 65 76 98 112 126 142 160 TEA0675 TOLERANCE (%) 20 15 15 15 10 10 10 10 10 10 10 It is recommended to switch off VCC with a gradient of 400 V/s at maximum to avoid plops on tape in the event of contact between tape and tape head while switching off. handbook, full pagewidth -20 MED623 (1) (dB) -30 -40 (2) -50 -60 102 103 104 (Hz) 105 (1) AMS threshold level for application circuit (Fig.1). (2) AMS threshold level for test circuit (Fig.24). Fig.3 AMS threshold level. 1996 Jun 07 9 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications Short description `music search' A system for `music search' mainly consists of a level and a time detection (see Fig.4). For adapting and decoupling the input signal will be amplified (A), then rectified (B) and smoothed with a time constant (C). So the voltage at (C) corresponds to the signal level and will be compared to the predefined pause level at the first comparator (D), the level detector. If the signal level becomes smaller than the pause level, the level detector changes its output signal. Due to the output level of the level detector the capacitor of the second time constant (E) will be charged, TEA0675 respectively discharged. If the pause level of the input signal remains for a certain time, the voltage at the capacitor reaches a certain value, which corresponds to an equivalent time value. The voltage at the capacitor will be compared to a predefined time-equivalent voltage by the second comparator (F), the time detector. If the pause level of the input signal remains for this predefined time, the time detector changes its output level for `pause found' status. handbook, full pagewidth (A) (B) (C) (D) COMPARATOR 1 (E) (F) COMPARATOR 2 INPUT t1 VI t2 Vt OUTPUT AMPLIFIER RECTIFIER LEVEL DETECTOR TIME DETECTOR MED624 Fig.4 Integrated `music search' function. 1996 Jun 07 10 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 Description of the principle timing diagram for AMS-scan mode without initial input signal (see Fig.5) tr: rise time handbook, full pagewidth td: delay time tb: burst time tp: pause time tf: fall time tr tb |
Vin t Vl Vl: voltage at level detector input pin 3 (CONTRA) t Vt upper threshold (hysteresis) Vt: voltage at time detector input pin 22 (CONTRB) level threshold VREF time threshold t VAMSEQ 4.5 V output signal to microprocessor t0 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 t15 t MED625 Fig.5 AMS-scan mode without initial input signal. By activating AMS-scan mode, the AMS output level directly indicates whether the input level corresponds to a pause level (VAMSEQ = LOW) or not (VAMSEQ = HIGH). At t0 the AMS-scan mode is activated. Without a signal at Vin, the following initial procedure runs until the AMS output changes to LOW level: due to no signal at Vin the voltage at the level detector input VI (pin 3, CONTRA) remains below the level threshold and the second time constant will be discharged (time detector input Vt). When Vt passes the time threshold level, the time detector output changes to LOW level. Now the initial procedure is completed. If a signal burst appears at t3, the level detector input voltage rises immediately and causes its output to charge the second time constant, which supplies the input voltage Vt for the time detector. When Vt passes the upper threshold level after the rise time tr (at t4), the AMS output changes to HIGH. If the signal burst ends at t5 the level detector input VI falls to its LOW level. When passing the level threshold at t6, the discharging of the second time constant begins. Now the circuit measures the delay time td, which is externally fixed by a resistor and defines the length of a pause to be detected. If no signal appears at Vin within the time interval td, the time detector output switches the AMS output to LOW level at t7. If a plop noise pulse appears at Vin (t8) with a pulse width less than the rise time tr > tb, the plop noise will not be detected as music. The AMS output remains LOW. Similarly the system handles `no music pulses' tp: when music appears at t11 with a small interruption at t13, this interruption will not affect the AMS output for tp < td. 1996 Jun 07 11 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 Description of the principle timing diagram for AMS-scan mode with initial input signal (see Fig.6) tr: rise time handbook, full pagewidth td: delay time tb: burst time tp: pause time tf: fall time Vin AMS on td tf tb |
Vin t Vl Vl: voltage at level detector input pin 3 (CONTRA) t Vt upper threshold (hysteresis) Vt: voltage at time detector input pin 22 (CONTRB) level threshold VREF time threshold t internal latch status H L t VAMSEQ 4.5 V output signal to power FET t0 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 t15 t MED627 Fig.7 AMS-latch mode without initial input signal. This is similar to the description of the principle timing diagram from AMS-scan mode. It only differs in its initial behaviour and its rise time tr. (Please notice that the different tr does not occur in the principle timing diagrams for latch and scan mode). Running in AMS-latch mode, the circuit may be simply applied to drive a stop solenoid via a power FET. So the AMS output signal has not to be processed by a controller. Because there is no processor to make a decision whether there is a plop noise or not, for this mode the rise time tr is extended to approximately 150 ms. By activating AMS-latch mode the AMS output will not change to LOW level at t2 if there is no initial signal at Vin. A latch forces the AMS output to be HIGH until a signal appears at Vin (t4). After t4 the latch will not affect the output any more until AMS-latch mode is started again. The existence of the latch appears necessary if the AMS output for example drives a stop solenoid via a power FET. The LOW output level will cause a drive of the stop solenoid. This would happen after a maximum time of td occurred without any input signal. If there is no music on tape for a long time (e.g. at tape end), the AMS mode would be activated repeatedly as long as there is no signal at Vin. Thus the circuit waits until first music appears before detecting the pauses. 1996 Jun 07 13 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 Description of the principle timing diagram for AMS-latch mode with initial input signal (see Fig.8) r handbook, full pagewidth Vin t : rise time td: delay time tb: burst time tp: pause time tf: fall time AMS on td tf tb |
t Vl Vl: voltage at level detector input pin 3 (CONTRA) t Vt upper threshold (hysteresis) Vt: voltage at time detector input pin 22 (CONTRB) level threshold VREF time threshold t internal latch status H L t VAMSEQ 4.5 V output signal to power FET t t0 t1 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 t15 MED628 Fig.8 AMS-latch mode with initial input signal. This is similar to the description in Section "Description of the principle timing diagram for AMS-scan mode with initial input signal (see Fig.6)". It only differs in its rise time tr and a release of its internal latch when voltage Vt passes the upper threshold between t0 and t1. Now the initial procedure is completed. The following behaviour does not differ from the description in Section "Description of the principle timing diagram for AMS-latch mode without initial input signal (see Fig.7)". 1996 Jun 07 14 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications INTERNAL PIN CONFIGURATIONS handbook, halfpage TEA0675 2 + Vref 0.23 V handbook, halfpage + 1 5V 65 65 MBH506 MBH507 Fig.9 Pins 1 and 24: output channel. Fig.10 Pins 2 and 23: integrating filter. handbook, halfpage + 3 5V 1.2 k 3.4 k 3.6 k handbook, halfpage + + 4 5V + 675 10 k MBH509 MBH508 Fig.11 Pins 3 and 22: control voltage. Fig.12 Pins 4 and 21: high-pass filter. 1996 Jun 07 15 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 handbook, halfpage 5 + 5V handbook, halfpage 6 + 8V 1 K MBD510 MBH511 Fig.13 Pins 5 and 20: side chain. Fig.14 Pin 6: delay time constant. handbook, halfpage + 7 5V handbook, halfpage + 8 5V 10 k 100 5.8 k 1 pF MBH513 MBH512 Fig.15 Pins 7 and 18: equalizing output. Fig.16 Pins 8 and 17: equalizing input. 1996 Jun 07 16 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 handbook, halfpage 10 5V + handbook, halfpage 9 10 V 220 100 k MBH514 12 pF 5V MBH515 Fig.17 Pin 9: supply voltage. Fig.18 Pins 10, 12, 13 and 15: input channel. handbook, halfpage + handbook, halfpage 14 8V + 2.5 k 11 5V 2.5 k MBH516 MBH517 Fig.19 Pin 11: reference voltage. Fig.20 Pin 14: head switch input. 1996 Jun 07 17 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 handbook, halfpage + 19 4.6 V MBH518 Fig.21 Pin 19: AMS output and EQ switch input. 1996 Jun 07 18 ndbook, full pagewidth 1996 Jun 07 AMS output NR 4.7 nF 70 s 10 F EQ 10 F ON 1.5 k 20 k 27 k 24 k 10 k 18 k 15 nF OFF 180 k 21 20 19 18 17 16 15 14 13 EQ AMP. PRE AMP. AMS PROCESSOR LOGIC DELAY TIME POWER SUPPLY Philips Semiconductors 10 F 330 nF 100 nF output B 270 k TEST AND APPLICATION INFORMATION 24 23 22 DOLBY B LATCH AND RISE TIME TEA0675 Dual Dolby* B-type noise reduction circuit for playback applications 19 EQ AMP. 4 20 k 180 k 15 nF Rt 10 k 4.7 nF 10 F 0.25 V RMS 1 kHz 100 nF ON (1) LEVEL DETECTOR DOLBY B PRE AMP. 8 9 VCC = 10 V 10 k 1000 F 100 F 10 11 12 1 2 3 5 6 7 270 k 1.5 k OFF 24 k 10 F output A 330 nF 100 nF MED629 (1) Switched to VCC for AMS-scan mode. Preliminary specification TEA0675 Fig.22 Test circuit for power supply ripple rejection. 1996 Jun 07 handbook, full pagewidth AMS output 15 nF OFF 10 F ON 1.5 k 20 k 27 k 24 k 10 k 18 k 180 k NR 4.7 nF EQ 70 s 10 F Philips Semiconductors 10 F 330 nF 100 nF output B 270 k 24 23 22 21 20 19 18 17 16 15 14 13 DOLBY B EQ AMP. PRE AMP. LATCH AND RISE TIME LOGIC DELAY TIME POWER SUPPLY AMS PROCESSOR TEA0675 Dual Dolby* B-type noise reduction circuit for playback applications 20 DOLBY B EQ AMP. 4 20 k 180 k Rt 10 k 10 F 100 nF 10 V 15 nF 4.7 nF 24 k 10 F 5 6 7 8 9 PRE AMP. LEVEL DETECTOR 1 2 3 10 11 12 270 k 10 F 100 F 200 output A 330 nF 100 nF MED630 Preliminary specification TEA0675 Fig.23 Test circuit for channel separation. handbook, full pagewidth 1996 Jun 07 AMS output 15 nF 10 F 4.7 nF EQ 70 s 10 F 1.5 k 20 k 24 k 10 k 27 k 18 k 21 20 19 18 17 16 15 14 13 EQ AMP. PRE AMP. AMS PROCESSOR LOGIC DELAY TIME POWER SUPPLY Philips Semiconductors 10 F 330 nF 100 nF output B 270 k 180 k 24 23 22 DOLBY B LATCH AND RISE TIME TEA0675 voltage input Dual Dolby* B-type noise reduction circuit for playback applications 21 EQ AMP. 4 20 k 15 nF (1) LEVEL DETECTOR DOLBY B PRE AMP. 8 9 10 11 12 1 2 3 5 6 7 270 k 1.5 k Rt 10 k 10 F 4.7 nF 24 k 10 F output A 330 nF 100 nF 180 k 100 F 100 nF 10 V (1) Switched to VCC for AMS-scan mode. MED631 Preliminary specification TEA0675 Fig.24 Test circuit for AMS threshold level. ndbook, full pagewidth 1996 Jun 07 VCC 25 k 10 F Vi 10 F 25 k 27 k AMS output - EQ 70 s 10 F 10 k + 15 nF OFF ON 1.5 k 20 k 24 k 18 k 4.7 nF 180 k NR TP 21 20 19 18 17 16 15 14 13 DOLBY B EQ AMP. PRE AMP. AMS PROCESSOR LOGIC DELAY TIME POWER SUPPLY Philips Semiconductors Encode mode 10 F 330 nF 100 nF output B 270 k 24 23 22 LATCH AND RISE TIME TEA0675 Dual Dolby* B-type noise reduction circuit for playback applications 22 DOLBY B EQ AMP. 4 20 k 180 k Rt 10 k 10 F TP 100 nF Vi 10 V 15 nF 4.7 nF AMS OFF 24 k VCC 5 6 7 8 9 PRE AMP. 10 F LEVEL DETECTOR 1 2 3 10 11 12 270 k 10 F output A 330 nF 100 nF 470 pF 200 100 F MED632 Decode mode: pre-amplifier 30 dB and EQ amplifier 10 dB linear. Preliminary specification TEA0675 Fig.25 Test circuit for frequency response (channel B). Preliminary specification TEA0675 Fig.26 EMC test circuit. handbook, full pagewidth 1996 Jun 07 24 k 4.7 nF 470 pF 20 k 10 k 27 k 200 10 F 200 470 pF 10 F haed-switch input 180 k 15 nF 21 20 19 18 17 16 15 14 13 EQ AMP. PRE AMP. AMS PROCESSOR LOGIC DELAY TIME POWER SUPPLY Philips Semiconductors 10 F 330 nF 100 nF output B 270 k 24 23 22 DOLBY B LATCH AND RISE TIME TEA0675 Dual Dolby* B-type noise reduction circuit for playback applications LEVEL DETECTOR 23 EQ AMP. 4 20 k 5 6 7 8 9 VCC = 10 V 10 k 10 F 100 nF 470 pF PRE AMP. 180 k 15 nF 4.7 nF 24 k Rt MBH497 DOLBY B 1 2 3 10 11 12 270 k 10 F output A 330 nF 100 nF 200 200 100 F 470 pF 10 40 Decode mode: pre-amplifier 30 dB and EQ amplifier 10 dB linear. Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications LAYOUT OF PRINTED-CIRCUIT BOARD FOR EMC TEST CIRCUIT (FOR TEA0675T) TEA0675 handbook, full pagewidth 63 52 470 pF 200 200 470 pF 0 0 40 0 0 470 pF 200 200 470 pF 27 k 10 k 20 k 24 k 15 nF 100 nF 180 k 270 k 4.7 nF 100 nF 10 TEA0675T 100 nF 4.7 nF 270 k Rt 180 k 20 k 10 k 100 nF 15 nF 24 k MBH460 Dimensions in mm. Fig.27 Top side with components. 1996 Jun 07 24 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 ook, full pagewidth 63 52 10 F 10 F S1 330 nF 100 F MP 100 F X2 X4 X3 MP HFDR. 330 nF MP X1 10 F 10 F 10 F MBH459 Dimensions in mm. Fig.28 Bottom side with components. 1996 Jun 07 25 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications PACKAGE OUTLINES SDIP24: plastic shrink dual in-line package; 24 leads (400 mil) TEA0675 SOT234-1 D seating plane ME A2 A L A1 c Z e b 24 13 b1 wM (e 1) MH pin 1 index E 1 12 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 4.7 A1 min. 0.51 A2 max. 3.8 b 1.3 0.8 b1 0.53 0.40 c 0.32 0.23 D (1) 22.3 21.4 E (1) 9.1 8.7 e 1.778 e1 10.16 L 3.2 2.8 ME 10.7 10.2 MH 12.2 10.5 w 0.18 Z (1) max. 1.6 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT234-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-02-04 1996 Jun 07 26 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 D E A X c y HE vMA Z 24 13 Q A2 A1 pin 1 index Lp L 1 e bp 12 wM detail X (A 3) A 0 5 scale 10 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 15.6 15.2 0.61 0.60 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 0.42 0.39 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.9 0.4 0.012 0.096 0.004 0.089 0.019 0.013 0.014 0.009 0.043 0.055 0.016 0.035 0.004 0.016 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT137-1 REFERENCES IEC 075E05 JEDEC MS-013AD EIAJ EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-01-24 1996 Jun 07 27 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). SDIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. TEA0675 Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. 1996 Jun 07 28 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values TEA0675 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 07 29 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications NOTES TEA0675 1996 Jun 07 30 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications NOTES TEA0675 1996 Jun 07 31 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 805 4455, Fax. +61 2 805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 708 296 8556 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 615 800, Fax. +358 615 80920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 52 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. +30 1 4894 339/911, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 648 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 83749, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 926 5361, Fax. +7 095 564 8323 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SAO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996 Internet: http://www.semiconductors.philips.com/ps/ (1) ADDRESS CONTENT SOURCE August 6, 1996 SCA49 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 517021/50/04/pp32 Date of release: 1996 Jun 07 Document order number: 9397 750 00898 |
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