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| (R) STB20NE06L N - CHANNEL 60V - 0.06 - 20A TO-263 STripFETTM POWER MOSFET TYPE STB20NE06L s s s s s s V DSS 60 V R DS(on) < 0.07 ID 20 A TYPICAL RDS(on) = 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC LOW THRESHOLD DRIVE ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION D2PAK TO-263 (suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (*) P tot dv/dt Ts tg Tj June 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o o Value 60 60 20 20 14 80 70 0.47 7 -65 to 175 175 ( 1) ISD 20 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX Un it V V V A A A W W /o C V/ns o o C C 1/8 (*) Pulse width limited by safe operating area STB20NE06L THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 2.14 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 35 V) Max Value 20 100 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 20 V T c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 5 V V GS = 10 V Test Con ditions ID = 250 A I D = 10 A ID = 10 A 20 Min. 1 Typ. 1.7 0.07 0.06 Max. 2.0 0.085 0.07 Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =10 A V GS = 0 Min. 5 Typ. 9 800 125 40 Max. Unit S pF pF pF 2/8 STB20NE06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 30 V I D = 10 A R G =4.7 W VGS = 5 V (see test circuit, figure 3) V DD = 48 V I D = 20 A V GS = 5 V Min. Typ. 20 45 14 8 4 20 Max. Unit ns ns nC nC nC SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 48 V I D = 20 A R G =4.7 V GS = 5 V (see test circuit, figure 5) Min. Typ. 10 25 42 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A V GS = 0 65 130 4 I SD = 20 A di/dt = 100 A/s o Tj = 150 C V DD = 30 V (see test circuit, figure 5) Test Con ditions Min. Typ. Max. 20 80 1.5 Unit A A V ns nC A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STB20NE06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB20NE06L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB20NE06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB20NE06L TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 DIM. D A C A2 DETAIL "A" A1 B2 B G C2 DETAIL"A" E L2 L L3 P011P6/E 7/8 STB20NE06L Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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