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  Datasheet File OCR Text:
 Semiconductor
STA353
PNP Silicon Transistor
Descriptions
* High current application * Audio power amplifier
Features
* High current : IC = -2A * Complementary pair with STC352
Ordering Information
Type NO. STA353 Marking STA353 Package Code MPT
Outline Dimensions
6.50.2
unit :
mm
21.51.0
1.10.1
1.2 Max. 0.70 Max. 0.4~0.6
1
2
3
2.50.1. 5.00.2
12.5 Min.
8.50.2
PIN Connections 1. Emitter 2. Collector 3. Base
3.40.2
2.00.1
KST-B002-000
0.50.2
1
STA353
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter Current Collector Power dissipation Junction temperature Storage temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC IE PC ( Tc=25) PC ( Ta=25) Tj Tstg
Rating
-40 -30 -5 -2 2 10 1.2 150 -55~150
Unit
V V V A A W C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VBE(ON) VCE(sat)1 VCE(sat)2 fT Cob
Test Condition
IC=-100A, IE=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA IC=-2A, IB=-0.2A IC=-1.5A, IB=-0.03A VCE=-5V, IC=-500mA VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-40 -30 -5 100 120 48 -0.1 -0.1 320 -1 -0.8 -2 -
Unit
V V V A A V V MHz pF
* : hFE rank / O : 100~200, Y : 160~320
KST-B002-000
2
STA353
Electrical Characteristic Curves
Fig. 1 PC - TA Fig. 2 VCE(sat) - IC
Fig. 3 fT - IC
Fig. 4 COb - VR
Fig. 5 hFE - IC
Fig. 6 IC - VBE
KST-B002-000
3
STA353
Fig. 7 Safe Operating Area Fig. 8 PC - TC
KST-B002-000
4


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