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PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor
Description
The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

25 Volt, 900-960 MHz Characteristics - Output Power = 1 Watt - Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power and Efficiency vs. Input Power
2.0 80
VCC = 25 V
1.5
Output Power (Watts)
ICQ = 175 mA f = 960 MHz
60
1.0
40
Efficiency (%)
201 89
LO TC OD E
0.5
20
0.0 0.00
0.02
0.04
0.06
0.08
0 0.10
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC
Symbol
VCER VCBO VEBO IC PD
Value
40 50 4.0 0.5 11 0.063 -40 to +150 16.0
Unit
Vdc Vdc Vdc Adc Watts W/C C C/W
1 9/28/98
PTB 20189
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
e
Conditions
IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1.5 A
Symbol
V(BR)CEO V(BR)CES V(BR)EBO hFE
Min
28 55 3.5 20
Typ
32 70 5 50
Max
-- -- -- 120
Units
Volts Volts Volts --
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz--all phase angles at frequency of test)
Symbol
Gpe C
Min
12 -- --
Typ
14 25 --
Max
-- -- 10:1
Units
dB % --
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA)
Z Source
Z Load
Frequency
MHz 900 930 960 R 3.0 3.0 2.9
Z Source
jX -0.4 0.0 0.5 R 9.0 9.0 9.2
Z Load
jX 6.0 7.5 8.9
2
e
Typical Performance
Output Power vs. Supply Voltage
1.3
PTB 20189
Gain vs. Frequency
16
(as measured in a broadband circuit)
Output Power (Watts)
1.1
ICQ = 175 mA Pin = 40 mW f = 960 MHz Gain (dB)
14
0.9
12
VCC = 25 V
10
0.7
ICQ = 175 mA Pout = 1 W
915 930 945 960
0.5 16 18 20 22 24 26 28 30
8 900
Vcc, Supply Voltage
Frequency (MHz)
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434
1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20189 Uen Rev. C 09-28-98
3


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