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| e PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 100 Watts, 1.8-2.0 GHz Class AB Characteristics 40% Collector Efficiency at 100 Watts Gold Metallization Silicon Nitride Passivated Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 11 Output Power (W) 140 120 Gain (dB) 10 9 8 7 6 VCC = 26 V ICQ = 200 mA 100 80 Output Power & Efficiency 12 2012 5 LOT COD E Gain (dB) 60 40 Efficiency (%) 20 2050 5 1750 1800 1850 1900 1950 2000 Frequency (MHz) Package 20225 * Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 55 55 4.0 14 400 2.3 -40 to +150 0.44 Unit Vdc Vdc Vdc Adc Watts W/C C C/W * This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications. 1 5/1 9/98 PTB 20125 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 100 mA IC = 0 A, IE = 20 mA VCE = 10 V, IC = 1.5 A Symbol V(BR)CES V(BR)EBO hFE Min 55 4.0 30 Typ -- 5.0 50 Max -- -- 120 Units Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 40 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 100 W, ICQ = 2 x 100 mA, f = 2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 100 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz --at all phase angles) Symbol Gpe Min 7.0 40 -- Typ 8.0 45 -- Max -- -- 5:1 Units dB % -- C Typical Performance Broadband Test Fixture Performance 10 Gain (dB) 8 60 50 40 - 30 5 20 -15 -25 10 Return Loss (dB) 0 1900 1925 1950 1975 -35 0 2000 Efficiency (%) Output Power vs. Supply Voltage 140 Output Power (Watts) 130 120 110 100 90 80 70 22 23 24 25 26 27 Gain (dB) 6 4 2 VCC = 26 V ICQ = 200 mA Pout = 50 W Efficiency (%) Return Loss (dB) ICQ = 200 mA f = 2000 MHz Frequency (MHz) Supply Voltage (Volts) 2 e Power Gain vs. Output Power 10 9 160 PTB 20125 Typical Output Power vs. Input Power 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 Power Gain (dB) ICQ = 200 mA 8 ICQ = 100 mA 7 6 5 0.1 1.0 10.0 100.0 ICQ = 50 mA Output Power (Watts) VCC = 26 V f = 2000 MHz Vcc = 26 V ICQ = 200 mA f = 2000 MHz Output Power (Watts) Input Power (Watts) Intermodulation Distortion vs. Power Output -30 -31 -32 -33 -34 -35 -36 -37 -38 -39 -40 10 20 30 40 50 60 70 80 90 100 IMD (dBc) VCC = 26 V ICQ = 2 x 50 mA f1 = 1.999 GHz f2 = 1.998 GHz Output Power (Watts-PEP) Impedance Data (VCC = 26 Vdc, Pout = 100 W, ICQ = 2 x 100 mA) Z Source Z Load Z0 = 50 Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R 5.4 5.8 6.0 7.2 8.8 10.4 11.8 Z Source jX -6.2 -7.6 -8.6 -9.2 -9.0 -7.2 -2.4 R 5.1 5.2 5.4 5.6 5.8 6.0 6.2 Z Load jX -6.2 -5.8 -5.0 -4.0 -2.8 -2.4 -1.8 3 PTB 20125 Test Circuit e Q1 Block Diagram for f = 2 GHz l1, l2, l21, l22 l3, l4 l5, l6 l7, l8, l11, l12 l9, l10 l13, l14 l15, l16 l17, l18 l19, l20 Q1 PTB 20125 NPN RF Transistor .25 2GHz Microstrip 50 .085 2GHz Microstrip 80 .067 2GHz Microstrip 20 .0217 2GHz Microstrip 11.7 .053 2GHz Microstrip 8.15 .055 2GHz Microstrip 6.7 .052 2GHz Microstrip 11.45 .060 2GHz Microstrip 16.9 .252 2GHz Microstrip 75 L1, L2 L3, L4 L5, L6 C1, C2 C3-8, C17, C18 C9, C11, C13, C15 C10, C12, C14, C16 R1, R2 T1, T2 Board 6.8 nh SMT Inductor 56 nh SMT Inductor 4 mm. SMT Ferrite 0-4 pF Johanson Piston Trimmer 33 pF (B ATC 100) .1 F 1206 10 F SMT Tantalum 22 SMT UT 70-50 0.031: G200, Solid Copper Bottom, AlliedSignal Placement Diagram (not to scale) 4 e PTB 20125 Artwork (1 inch ) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20125 Uen Rev. C 09-28-98 5 |
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