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| e PTB 20097 40 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 915-960 MHz Class AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 60 50 40 30 20 10 0 0 2 4 6 8 10 Output Power (Watts) 200 97 LO TC OD E VCC = 25 V ICQ = 200 mA f = 960 MHz Input Power (Watts) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 10 175 1.0 -40 to +150 1.0 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20097 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 960 MHz --all phase angles at frequency of test) Symbol Gpe C Min 8.5 50 -- Typ 9.5 -- -- Max -- -- 10:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA) Z Source Z Load Frequency GHz 915 935 960 R 5.2 5.1 4.7 Z Source jX -2.8 -2.6 -2.1 R 4.9 4.7 4.6 Z Load jX -4.3 -3.7 -2.9 2 5/19/98 e Typical Performance Gain & Efficiency vs. Frequency 12 11 Gain (dB) PTB 20097 (as measured in a broadband circuit) 80 70 60 10 9 8 7 6 900 Efficiency (%) 50 VCC = 25 V ICQ = 200 mA Pout = 40 W 915 930 945 960 40 30 20 975 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20097 Uen Rev. C 09-28-98 3 5/19/98 Efficiency (%) Gain (dB) |
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