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| e PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 915-960 MHz Class AB Characteristics Specified 25 Volts, 960 MHz Characteristics - Output Power = 15 Watts - Collector Efficiency = 50% Min at 15 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25 20 15 10 5 0 0.0 VCC = 25 V ICQ = 100 mA f = 960 MHz 200 95 LOT COD E 0.4 0.8 1.2 1.6 2.0 Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 6.7 65 0.4 -40 to +150 2.7 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20095 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1.0 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 15 W, ICQ = 100 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 15 W, ICQ = 100 mA, f = 960 MHz) Intermodulation Distortion (VCC = 25 Vdc, Pout = 15 W(PEP), ICQ = 100 mA, f1 = 915 MHz, f2 = 916 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 15 W, ICQ = 100 mA, f = 960 MHz --all phase angles at frequency of test) Symbol Gpe C IMD Min 10 50 -- Typ 11 -- -32 Max -- -- -- Units dB % dBc -- -- 30:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 15 W, ICQ = 100 mA) Z Source Z Load Frequency MHz 915 935 960 R 6.3 6.0 5.9 Z Source jX -4.3 -4.1 -3.8 R 2.8 2.8 2.7 Z Load jX 1.3 1.7 2.2 2 e Typical Performance Gain & Efficiency vs. Frequency 14 13 PTB 20095 (as measured in a broadband circuit) 80 70 60 50 Gain (dB) 12 11 10 9 8 900 VCC = 25 V ICQ = 100 mA Pout = 15 W 915 930 Gain (dB) 40 30 20 975 945 960 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20095 Uen Rev. D 09-28-98 3 Efficiency (%) Efficiency (%) |
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