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| Datasheet File OCR Text: |
| NTE318 Silicon NPN Transistor RF Power Output Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions. Features: D Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain D Withstands severe mismatch under operating conditions D Low inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Device Dissipation (+25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: Parameter Symbol Test Conditions Min 18 36 4 - 10 200 - 47 10 Typ - - - - - - - - - Max - - - 1 - - 200 - - MHz pF W dB Unit V V V mA Collector-Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0, Note 1 Collector-Emitter Breakdown Voltage V(BR)CES IC = 200mA, VBE = 0, Note 1 Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain Gain Bandwidth Output Capacitance Amplifier Power Out Amplifier Power Gain V(BR)EBO IE = 2.5mA, IC = 0 ICBO hFE ft Cob PO Pg VCB = 15V, IE = 0 VCE = 5V, IC = 250mA VCE = 13.5V, IC = 100mA VCB = 12.5V, IC = 0, -FO = 1.0MHz 28MHz/12.5V Note 1. Pulsed through 25mH Inductor .725 (18.42) .127 (3.17) Dia (2 Holes) C E .250 (6.35) B .225 (5.72) E 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) .975 (24.77) .095 (2.42) |
Price & Availability of NTE318
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