 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE2933 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.437 Typ D Lower Leakage Current: 10A (Max) @ VDS = 400V Absolute Maximum Ratings: Drain-to-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W/C Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 549mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +300C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.46C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 15mH, IAS = 8A, VDD = 50V, RG = 27, Starting TJ = +25C. Note 3. ISD 10A, di/dt 170A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Gate-Source Leakage Forward Gate-Source Leakage Reverse Drain-to-Source Leakage Current Symbol BVDSS V(BR)DSS/ ID = 250A TJ VGS(th) IGSS IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr (Body Diode) (Body Diode) Note 1 TJ = +25C, IS = 8A, VGS = 0V, Note 4 TJ = +25C, IF = 10A, diF/dt = 100A/s, Note 4 VGS = 10V, ID = 10A, VDS = 320V, Note 4, Note 5 VDD = 200V, ID = 10A, RG = 9.1, Note 4, Note 5 VDS = 5V, ID = 250A VGS = 30V VGS = -30V VDS = 400V VDS = 320V, TC = +150C Static Drain-Source ON Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge VGS = 10V, ID = 4A, Note 4 VDS = 50V, ID = 4A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Test Conditions VGS = 0V, ID = 250A Min 400 - 2.0 - - - - - - - - - - - - - - - - Typ - 0.50 - - - - - - 7.05 1180 175 80 18 21 78 28 58 8.1 31.3 Max - - 4.0 100 -100 10 100 0.55 - 1530 205 95 50 55 170 65 75 - - Unit V V/C V nA nA A A mhos pF pF pF ns ns ns ns nC nC nC Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge - - - - - - - - 315 2.84 8 44 1.5 - - A A V ns C Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width = 250s, Duty Cycle 2%. Note 5. Essentially independent of operating temperature. .221 (5.6) .123 (3.1) .134 (3.4) Dia .630 (16.0) .315 (8.0) .866 (22.0) G .158 (4.0) D S .804 (20.4) .215 (5.45) .040 (1.0) |
Price & Availability of NTE2933
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |