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| NTE2922 MOSFET N-Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/C Gate-to-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6-32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24C/W Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = +25C, L = 2.7mH, RG = 25, IAS = 16A ISD 16A, di/dt 200A/s, VDD 400V, TJ +150C Pules Width 300s, Duty Cycle 2%. Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250A Min 400 - - 2.0 10 - - - - - - - VDD = 200V, ID = 16A, RG = 6.2, RD = 12, Note 4 - - - - Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz - - - - - Typ - 0.51 - - - - - - - - - - 16 49 87 47 5.0 13 2600 660 250 Max - - 0.30 4.0 - 25 250 100 -100 150 23 80 - - - - - - - - - Unit V V/C V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF V(BR)DSS Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 9.6A, Note 4 VDS = VGS, ID = 250A VDS = 50V, ID = 9.6A, Note4 VDS = 400V, VGS = 0V VDS = 320V, VGS = 0V, TJ = +125C VGS = 20V VGS = -20V ID = 16A, VDS = 320V, VGS = 10V, Note 4 Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance Source-Drain Ratings and Characteristics: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Symbol IS ISM VSD trr Qrr ton Note 1 TJ = +25C, IS = 16A, VGS = 0V, Note 4 TJ = +25C, IF = 16A, di/dt = 100A/s, Note 4 Test Conditions Min - - - - - Typ - - - 380 4.7 Max 16 64 1.6 570 7.1 Unit A A V ns C Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 300s; duty cycle 2%. .626 (15.9) Max .217 (5.5) .197 (5.0) See Note .787 (20.0) .143 (3.65) Dia Max .157 (4.0) .559 (14.2) Min .215 (5.45) .047 (1.2) .094 (2.4) G D S TO247 Note: Drain connected to metal part of mounting surface. |
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