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| LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 60 W WITH 17.3 dB gain @ 945 MHz * BeO FREE PACKAGE * HIGH GAIN * ESD PROTECTION ORDER CODE LET9060C M243 epoxy sealed BRANDING LET9060C DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and reliability of the ST latest LDMOS technology. Its superior performances make it an ideal solution for base station applications. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 7 118 200 -65 to +150 Unit V V A W C C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.1 C/W 1/5 November, 4 2002 LET9060C ELECTRICAL SPECIFICATION (TCASE = 25C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 28 V VDS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 0.7 2.3 69.5 38 1.6 Min. 65 1 1 5.0 0.8 Typ. Max. Unit V A A V V mho pF pF pF DYNAMIC Symbol P1dB GP D Load mismatch VDD = 26 V VDD = 26 V VDD = 26 V Test Conditions IDQ = 250 mA IDQ = 250 mA IDQ = 250 mA POUT = 60 W POUT = 60 W POUT = 60 W f = 945 MHz f = 945 MHz f = 945 MHz f = 945 MHz 5:1 Min. 60 Typ. 65 17.3 60 Max. Unit W dB % VSWR VDD = 26 V IDQ = 250 mA ALL PHASE ANGLES IMPEDANCE DATA D ZDL Typical Input Impedance G Zin Typical Drain Load Impedance S FREQ. 925 MHz 945 MHz 960 MHz ZIN () TBD TBD TBD ZDL() TBD TBD TBD 2/5 LET9060C TYPICAL PERFORMANCE Power Gain vs. Output Power 22 Efficiency vs. Output Power 70 20 60 50 18 Gp (dB) 16 Eff (%) f = 945 MH z Vc c = 26 V Idq = 250 m A 0 10 20 30 40 P out (W ) 50 60 70 80 40 30 14 20 12 10 f = 945 MHz Vc c = 26 V Idq = 250 m A 0 10 20 30 40 P ou t (W ) 50 60 70 80 10 0 3/5 LET9060C M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 5.72 6.48 6.10 14.27 20.07 8.89 0.10 3.18 1.83 1.27 20.57 9.40 0.15 4.45 2.24 1.78 0.790 0.350 0.004 0.125 0.072 0.050 MIN. 0.205 0.215 0.220 0.562 0.810 0.370 0.006 0.175 0.088 0.070 TYP. MAX 0.225 0.255 0.240 DIM. A B C D E F G H I J MIN. 5.21 5.46 5.59 TYP. Controlling dimension: Inches 1022142E 4/5 LET9060C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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