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| Target Data 05/01 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features * Gen. 4 Warp Speed IGBT Technology * HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery * Very Low Conduction and Switching Losses * Optional SMT Thermystor Inside * Aluminum Nitride DBC * Very Low Stray Inductance Design for High Speed Operation VCES = 600V VCE(on) typ. = 2.2V @ VGE = 15V, IC = 25A TC = 25C Benefits * Optimized for Welding, UPS and SMPS Applications * Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode * Low EMI, requires Less Snubbing * Direct Mounting to Heatsink * PCB Solderable Terminals * Very Low Junction-to-Case Thermal Resistance Absolute Maximum Ratings Parameters V CES IC ICM ILM I F Max 600 @ TC = 25C @ TC = 100C 50 25 200 200 @ TC = 100C 25 200 20 2500 900 400 @ TC = 25C @ TC = 100C Units V A Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Diode Continuous Forward Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation IFM VGE V ISOL PD V W 1 25MT060WF Target Data 05/01 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters V(BR)CES V CE(on) V GE(th) V GE(th) / T J g fe I CES V FM I GES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Collector-to-Emiter Leaking Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 1.3 1.2 100 Min Typ Max Units Test Conditions 600 1.85 1.7 3 40 250 5000 6 V GE = 0V, I C = 250A V GE = 15V, I C = 25A V GE = 15V, I C = 25A, T J = 150C I C = 250A mV/C V GE = V CE , I C = 500A S A V nA V CE = 100V, I C = 25A V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 150C I F = 25A, V GE = 0V I F = 25A, V GE = 0V, T J = 150C V GE = 20V V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff(1) Ets(1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode PeakRate of Fall of Recovery During tb Min Typ Max Units Test Conditions 180 25 63 950 320 1270 4000 260 68 50 4.5 112 250 nC IC = 25A VCC = 400V VGE = 15V Rg1 = Rg2 = 5 , IC = 25A VCC = 480V VGE = 15V VGE = 0V VCC = 30V f = 1.0 MHz VR = 200V, IC = 25A di/dt = 200A/s J pF ns A nC A/s Thermal- Mechanical Specifications Parameters TJ TSTG RthJC RthCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Weight IGBT Diode Module 0.06 66 g (Heatsink Compound Thermal Conductivity = 1 W/mK) Min - 40 - 40 Typ Max 150 125 0.7 0.9 Units C C/ W 2 25MT060WF Target Data 05/01 Outline Table Dimensions in millimeters Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 05/01 3 |
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