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| TN0205A/AD New Product Vishay Siliconix N-Channel 20-V MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V ID (mA) 250 150 FEATURES D D D D Low On-Resistance: 2.0 Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery operated Systems D Solid State Relay D Load/Power Switching-Cell Phones, PDA SOT-323 SC-70 (3-Leads) G 1 3 S 2 Order Number: TN0205A D S1 G1 D2 1 2 3 SOT-363 SC-70 (6-Leads) 6 5 4 D1 G2 S2 Marking Code: TN0205A: Bl TN0205AD: Dwl w = Week Code l = Lot Traceability Order Number: TN0205AD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM TN0205A 20 "8 250 200 500 0.15 TN0205AD Unit V mA 0.20 (Total) 0.13 (Total) -55 to 150 W _C PD TJ, Tstg 0.10 THERMAL RESISTANCE RATINGS Parameter Thermal Resistance, Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70868 S-04279--Rev. B, 16-Jul-01 www.vishay.com Symbol RthJA TN0205A 833 TN0205AD 625 (Total) Unit _C/W 11-1 TN0205A/AD Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 5.0 V, VGS = 2.5 V VDS = 8.0 V, VGS = 4.5 V VGS = 2.5 V, ID = 150 mA VGS = 4.5 V, ID = 250 mA Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 2.5 V, ID = 50 mA IS = 50 mA, VGS = 0 V 120 400 160 800 1.6 1.2 200 0.7 1.2 2.5 2.0 mS V mA 20 0.4 24 V 0.9 "2 0.001 1.5 "100 nA 100 5 mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) W Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 5.0 V, VGS = 0 V, f = 1 MHz VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA 350 25 100 20 14 5 pF 450 pC Switchingb, c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 3.0 V, RL = 100 W ID = 0.25 A, VGEN = 4.5 V, RG = 10 W 7 25 19 9 12 35 30 15 VNOJ ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70868 S-04279--Rev. B, 16-Jul-01 TN0205A/AD New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 1.25 VGS = 5 V 1.00 ID - Drain Current (A) 3V 0.75 2.5 V 0.50 2V 0.25 1.5 V 0.00 0 1 2 3 4 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID - Drain Current (A) 0.6 25_C 4.0 V 3.5 V 0.8 TJ = -55_C Vishay Siliconix Transfer Characteristics 0.4 125_C 0.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 rDS(on) - On-Resistance ( ) 40 5 4 3 VGS = 2.5 V 2 10 1 0 0 1 2 ID - Drain Current (A) 3 4 VGS = 4.5 V 0 0 4 Crss C - Capacitance (pF) 50 Capacitance 30 20 Coss Ciss 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 6 V ID = 100 mA 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 100 m A VGS - Gate-to-Source Voltage (V) 8 rDS(on) - On-Resistance ( ) (Normalized) 300 400 500 600 1.4 6 1.2 4 1.0 2 0.8 0 0 100 200 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Document Number: 70868 S-04279--Rev. B, 16-Jul-01 www.vishay.com 11-3 TN0205A/AD Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage 3 1 TJ = 125_C rDS(on) - On-Resistance ( ) 6 8 On-Resistance vs. Gate-to-Source Voltage IS - Source Current (A) 0.1 ID = 250 mA 4 TJ = 25_C 0.01 TJ = -55_C 2 0.001 0.00 0.3 0.6 0.9 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 50 mA 0.1 VGS(th) - Variance (V) -0.0 -0.1 -0.2 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70868 S-04279--Rev. B, 16-Jul-01 |
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