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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D Complementary Silicon High-Power Transistors . . . for general-purpose power amplifier and switching applications. * * * * 25 A Collector Current Low Leakage Current -- ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain -- hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product -- hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V 80 V 5.0 25 40 TIP35C TIP36C 100 V 100 V TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* *Motorola Preferred Device NPN PD, POWER DISSIPATION (WATTS) II II IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II III II IIIIIIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIII IIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I III I II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak (1) Base Current -- Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 5.0 PD 125 1.0 Watts W/_C Operating and Storage Junction Temperature Range Unclamped Inductive Load TJ, Tstg ESB - 65 to + 150 90 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 125 WATTS _C mJ THERMAL CHARACTERISTICS Characteristic Symbol RJC RJA Max 1.0 Unit Thermal Resistance, Junction to Case _C/W _C/W CASE 340D-02 TO-218AC Junction-To-Free-Air Thermal Resistance (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle 125 v 10%. 35.7 100 75 50 25 0 0 25 50 75 125 100 TC, CASE TEMPERATURE (C) 150 175 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 (c) Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C t, TIME ( s) II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIII I I III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) VCEO(sus) Vdc TIP35A, TIP36A TIP35B, TIP36B TIP35C, TIP36C 60 80 100 -- -- -- -- -- -- -- Collector-Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) ICEO mA TIP35A, TIP36A TIP35B, TIP35C, TIP36B, TIP36C 1.0 1.0 0.7 1.0 Collector-Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) ICES mA mA IEBO ON CHARACTERISTICS (1) DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) hFE -- 25 15 -- -- -- -- -- 75 Collector-Emitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) Base-Emitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) VCE(sat) Vdc 1.8 4.0 2.0 4.0 VBE(on) Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) hfe fT 25 -- -- -- Current-Gain -- Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) 3.0 MHz (1) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2.0%. VCC RL TURN-ON TIME - 30 V 3.0 TO SCOPE tr 20 ns 2.0 1.0 TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V tr + 2.0 V 0 tr 20 ns -11.0 V 10 RB 10 TO 100 S DUTY CYCLE 2.0% VCC + 9.0 V 0 10 RB RL - 30 V 3.0 TO SCOPE tr 20 ns TURN-OFF TIME 0.7 0.5 0.3 0.2 0.1 td -11.0 V (PNP) (NPN) tr 20 ns 10 to 100 s DUTY CYCLE 2.0% VBB + 4.0 V 0.07 0.05 0.03 0.02 0.3 FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 2. Switching Time Equivalent Test Circuits Figure 3. Turn-On Time 2 Motorola Bipolar Power Transistor Device Data TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C 10 7.0 5.0 3.0 2.0 t, TIME ( s) 1.0 0.7 0.5 0.3 0.2 0.1 0.3 0.5 0.7 tf ts tf 1000 (PNP) (NPN) ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 500 200 hFE , DC CURRENT GAIN 100 50 20 10 5.0 2.0 1.0 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) 50 100 PNP NPN VCE = 4.0 V TJ = 25C Figure 4. Turn-Off Time Figure 5. DC Current Gain FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. IC, COLLECTOR CURRENT (AMPS) 100 50 30 20 10 10 ms 5.0 2.0 1.0 0.5 0.3 0.2 0 1.0 dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT TIP35A, 36A TIP35B, 36B TIP35C, 36C 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 s 1.0 ms TC = 25C w REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. Figure 6. Maximum Rated Forward Bias Safe Operating Area 40 IC, COLLECTOR CURRENT (AMPS) 30 25 20 15 10 5.0 0 0 10 TIP35A TIP36A 40 60 80 20 30 50 70 90 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 TIP35B TIP36B TIP35C TIP36C TJ 100C Figure 7. Maximum Rated Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C TEST CIRCUIT VCE MONITOR L1 (SEE NOTE A) MJE180 INPUT 50 RBB1 20 L2 (SEE NOTE A) 50 RBB2 = 100 VCC = 10 V + VBB2 = 0 - VBB1 = 10 V + RS = 0.1 IC MONITOR - TUT VOLTAGE AND CURRENT WAVEFORMS tw = 6.0 ms (SEE NOTE B) 5.0 V INPUT VOLTAGE 0 100 ms 0 COLLECTOR CURRENT - 3.0 A 0 -10 V COLLECTOR VOLTAGE V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 , Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse width is increased until ICM = - 3.0 A. C. For NPN, reverse all polarities. Figure 8. Inductive Load Switching 4 Motorola Bipolar Power Transistor Device Data TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C PACKAGE DIMENSIONS C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H DIM A B C D E G H J K L Q S U V STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D-02 ISSUE B Motorola Bipolar Power Transistor Device Data 5 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data TIP35/D *TIP35/D* |
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