Part Number Hot Search : 
1N6084 SAMTEC AM3020 54198 01OD00 PE45137 F1000 S18LA
Product Description
Full Text Search
 

To Download BTS941 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 HITFET(R) BTS 941
Smart Lowside Power Switch
Features * Logic Level Input * Input Protection (ESD) * Thermal Shutdown * Overload protection * Short circuit protection * Overvoltage protection
* Current
Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy
VDS RDS(on) ID(lim) ID(ISO) EAS
60 28 6 12
V m A A
4000 mJ
limitation
* Maximum current adjustable with external resistor * Current sense * Status feedback with external input resistor * Analog driving possible
Application
* All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS (R) chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M
2
3
1
IN
4
CC Overtemperature protection
ESD R CC
Overload protection
Short circuit Short circuit protection protection Source 5
HITFET
(R)
Semiconductor Group
Page 1
14.07.1998
BTS 941
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 without RCC Continuous input current -0.2V VIN 10V
1)
Symbol
Value 60 15 50
Unit V
VDS VDS(SC)
IIN
no limit | IIN | 2 - 40 ... +150 - 55 ... +150 149 4000 3000
mA
VIN < -0.2V or VIN > 10V
Operating temperature Storage temperature Power dissipation
Tj Tstg Ptot EAS
C W mJ V
TC = 25 C
Unclamped single pulse inductive energy
ID(ISO) = 12 A
Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS
VLD
100 84 E 40/150/56
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 , ID=0,5*12A td = 400 ms, RI = 2 , ID= 12A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1
Thermal resistance junction - case: junction - ambient: SMD version, device on PCB:
3)
RthJC RthJA RthJA
0.84 75 45
K/W
1A sensor holding current of 500 A has to be guaranted in the case of thermal shutdown (see also page 3) 2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for Drain connection. PCB is vertical 2
without blown air.
Semiconductor Group
Page 2
14.07.1998
BTS 941
Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 35 270 2500 max. 73 20 2.2 100 500 4000 V A V A Unit
VDS(AZ) IDSS VIN(th) IIN(1)
60 1.3 1000
Tj = - 40 ...+ 150C, ID = 10 mA
Off state drain current
VDS = 32 V, Tj = -40...+150 C, VIN = 0 V
Input threshold voltage
ID = 2,7 mA
Input current - normal operation, ID VIN = 10 V
Input current - current limitation mode, ID=ID(lim) : IIN(2)
VIN = 10 V
Input current - after thermal shutdown, ID=0 A:
IIN(3) IIN(H)
VIN = 10 V
Input holding current after thermal shutdown
Tj = 25 C Tj = 150 C
On-state resistance
500 300
31 52 25 45
m 34 68 m 28 56 A
RDS(on)
-
ID = 12 A, VIN = 5 V, Tj = 25 C ID = 12 A, VIN = 5 V, Tj = 150 C
On-state resistance
RDS(on)
12
ID = 12 , VIN = 10 V, Tj = 25 C ID = 12 , VIN = 10 , Tj = 150
Nominal load current (ISO 10483)
ID(ISO)
VIN = 10 V, VDS = 0.5 V, TC = 85 C
Semiconductor Group
Page 3
14.07.1998
BTS 941
Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Initial peak short circuit current limit Symbol min. Values typ. max. Unit
ID(SCp) ID(lim)
-
160
-
A
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C, without RCC VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C, RCC = 0
Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew rate off 100 130 170 6 12 25
VIN to 90% ID : VIN to 10% ID :
70 to 50% Vbb : 50 to 70% Vbb :
ton toff
-dVDS /dton dVDS/dtoff
-
40 70 1 1
100 170 3 3
s
RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V
V/s
RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature Unclamped single pulse inductive energy
Tjt EAS
150 4000 900
165 -
-
C mJ
ID = 12 A, Tj = 25 C, Vbb = 32 V ID = 12 A, Tj = 150 C, Vbb = 32 V
Inverse Diode
Inverse diode forward voltage
VSD
-
1.13
-
V
IF = 5*12A, tm = 300 s, VIN = 0 V
1Device switched on into existing short circuit (see diagram Determination of I
D(lim) . Dependant on the application, these values might be exceeded for max. 50 s in case of short circuit occurs while the device is on condition
Semiconductor Group
Page 4
14.07.1998
BTS 941
Block Diagramm Terms
RL I IN 1 RCC V IN V CC 4 IN HITFET CC S 5 3 D ID VDS Vbb
Inductive and overvoltage output clamp
V Z
D
S
HITFET
The ground lead impedance of RCC should be as low as possible Input circuit (ESD protection)
Short circuit behaviour
V IN I D(SCp)
IN
ID
I D(Lim)
ESD-ZDI Source
t0 tm t1 t2
ESD zener diodes are not designed for DC current > 2 mA @ VIN >10V.
t0 : tm : t1 :
Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level wher the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement.
t2 :
Semiconductor Group
Page 5
14.07.1998
BTS 941
Maximum allowable power dissipation Ptot = f(Tc )
BTS 941
On-state resistance RON = f(Tj); ID=12A; VIN=10V
140
W
60
120
Ptot
110 100 90 80 70 60 50 40 30
RDS(on)
40
max.
30
typ.
20
10 20 10 0 0 20 40 60 80 100 120 C
150
150
0 -50
-25
0
25
50
75
100
C
150
Operating
On-state resistance RON = f(Tj); ID= 12A; V IN=5V
70
Typ. input threshold voltage VIN(th) = f(Tj ); ID =2,7A; VDS=12V
2.0
V
1.6
RDS(on)
50
VIN(th)
max. typ.
1.4 1.2 1.0 0.8 0.6 0.4
40
30
20
10
0.2
0 -50
-25
0
25
50
75
100
C
150
0.0 -50
-25
0
25
50
75
100
C
150
Tj
Tj
Page 6
Semiconductor Group
14.07.1998
BTS 941
Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj=25C
140
Typ. short circuit current IDlim = f(Tj); RCC =0, VDS =12V Parameter: VIN
150
A
A 10V
ID
100
ID
100
7V
80 75 60 50 40
6V
5V
4V
20
25
3V
0 0
2
4
6
V
10
0 -50
-25
0
25
50
75
100
C
150
VIN
Tj
Typ. output characteristic ID = f(VDS); Tj=25C Parameter: VIN
100
10V
Safe Operating Area ID(SC) = f(VDS); T j=25C
180
A
A
6V
ID
60
ID
140 120
5V
100 80
40
4V
60 40
Vin=3V
20
20 0 0
0 0
2
4
V
8
10
20
30
V
50
VDS
VDS
Page 7
Semiconductor Group
14.07.1998
BTS 941
Typ. current limit versus R CC ID(lim) = f(RCC); Tj =25C Parameter: VIN
140
10V A V
Typ. current sense characteristics VCC = f(ID); VIN =10V Parameter: RCC, Tj
500
68 Ohm no Rcc
ID
100
VCC
300
5V
125C
25C 27 Ohm
80
60 200 40 100 20
10 Ohm
00 10
10
1
10
2
10
3
10 RDS(on)
4
0 0
10
20
30
A
50
ID
Transient thermal impedance ZthJC = f(tP ) Parameter: D=tP /T
10
K/W
1
RthJC10
0
D=0.5 0.2
10
-1
0.1 0.05 0.02
10
-2
0.01 0.005 0
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
10
2
tP
Semiconductor Group
Page 8
14.07.1998
BTS 941
Application examples: Current Sense Features and Status Signals
IN
D S V bb
C
V CC
HITFET
CC RCC
IN open load thermal shutdown
Vcc
Vcc
reached triptemperature
The accuray of Vcc is at each temperature about 10 %
Status signal of thermal shutdown by monitoring input current
R St IN D S V bb
C
V IN
HITFET
CC
V
V IN
thermal shutdown
V = RST *IIN(3)
Semiconductor Group
Page 9
14.07.1998
BTS 941
Package and ordering code
all dimensions in mm
Ordering code: Q67060-S6702-A4
Ordering Code: Q67060-S6702-A2
Ordering Code: Q67060-S6702-A3
Semiconductor Group
Page 10
14.07.1998
BTS 941
Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Semiconductor Group
Page 11
14.07.1998


▲Up To Search▲   

 
Price & Availability of BTS941

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X