Part Number Hot Search : 
W2K2165 41A0536 BXMP1042 1W914 T10C270 TOP247F FR510F AK5370
Product Description
Full Text Search
 

To Download VN2460 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 VN2460
N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 600V RDS(ON) (max) 20 ID(ON) (min) 0.25A Order Number / Package TO-92 VN2460N3 TO-243AA* VN2460N8 Die** VN2460NW
* Same as SOT-89 Product Supplied on 2000 piece carrier tape reels. ** Die in wafer form.
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain
Product marking for TO-243AA:
VN4F
Where = 2-week alpha date code
Advanced DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings
D
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
BVDSS BVDGS 20V -55C to +150C 300C
G D S
TO-243AA (SOT-89)
SGD
TO-92
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VN2460
Thermal Characteristics
Package TO-243AA TO-92
ID (continuous)* 0.2A 0.16A
ID (pulsed) 0.6A 0.5A
Power Dissipation @ TC = 25C 1.6W 1W
jc
ja
IDR* 0.2A 0.16A
IDRM 0.6A 0.5A
C/W
15 125
C/W
78 170
* ID (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 600 1.5 -5.5 100 10 1 Typ Max Unit V V mV/C nA A mA Conditions VGS = 0V, ID = 2.0mA VGS = VDS , ID = 2.0mA VGS = VDS , ID = 2.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 10V, VDS = 25V VGS = 4.5V, ID = 100mA VGS = 10V, ID = 100mA VGS = 10V, ID = 100mA VDS = 25V, ID = 100mA VGS = 0V, VDS = 25V f = 1.0 MHz
ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD
ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop
0.25 25 20 1.7 50 150 50 25 10 10 25 20 1.5
A %/C m
pF
ns
V
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
VDD = 25V, ID = 250mA, RGEN = 25 VGS = 0V, ISD = 400mA
VDD
RL OUTPUT
D.U.T.
VN2460
Typical Performance Curves
Output Characteristics
1.2 0.5 VGS = 10V 1.0 0.4 8V 6V 0.6 8V 6V 5V 0.3 VGS = 10V 0.8
Saturation Characteristics
ID (Amperes)
ID (Amperes)
0.2 4V 0.1
0.4
5V
0.2
4V 3V 50 0 0 2 4 6 8 10 3V
0
0
10
20
30
40
VDS (Volts) Transconductance vs. Drain Current
0.5 VDS = 25V 0.4
VDS (Volts) Power Dissipation vs. Case Temperature
2.0
1.6
GFS (siemens)
PD (Watts)
TA = -55C 0.3 TA = 25C 0.2
SOT-89 1.2
0.8
TA = 125C
TO-92
0.1
0.4
0.0 0.0
0.1
0.2
0.3
0.4
0.5
0
0
25
50
75
100
125
150
ID (Amperes) Maximum Rated Safe Operating Area
1.0 SOT-89 (pulsed) 1.0
TC (C) Thermal Response Characteristics
SOT-89 P D = 1.6W T C = 25C
Thermal Resistance (normalized)
TO-92 (pulsed)
0.8
ID (amperes)
0.1
TO-92 (DC) SOT-89 (DC)
0.6
0.4
0.01
0.2
T C = 25C 0.001 1 10 100 1000 0 0.001 0.01 0.1
TO-92 P D = 1W T C = 25C
1.0 10
VDS (Volts)
tp (seconds)
3
VN2460
Typical Performance Curves
BVDSS Variation with Temperature
1.2 50 VGS = 4.5V
On Resistance vs. Drain Current
BVDSS (Normalized)
40
RDS(ON) (ohms)
1.1
30 VGS = 10V 20
1.0
0.9 10
0.8
-50
0
50
100
150
0
0
0.2
0.4
0.6
0.8
1.0
TJ (C) Transfer Characteristics
0.5
VDS = 25V TA = -55C TA = 25C 1.6
ID (Amperes) VGS(TH) and RDS(ON) w/ Temperature
3.0
VGS(th) (normalized)
0.4
1.2
VGS(th) @ 2mA
2.0
0.3
TA = 125C
1.0
1.5
0.2
0.8
1.0
0.1
0.6 0.4 -50
RDS(on) @ 10V, 0.1A
0.5
0 0 2 4 6 8 10
-25
0
25
50
75
100
125
0.0 150
VGS (Volts) Capacitance vs. Drain Source Voltage
300 f = 1MHz 8 225 10 ID = 0.5A
TJ (C) Gate Drive Dynamic Characteristics
VDS=10V
C (picofarads)
VGS (volts)
6
VDS=40V
150
CISS
4
75 2 COSS CRSS 0 0 10 20 30 40 0 0 1.0 2.0 3.0 4.0 5.0
VDS (volts)
QG (nanocoulombs)
11/12/01
(c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com
RDS(ON) (normalized)
1.4
2.5
ID (Amperes)


▲Up To Search▲   

 
Price & Availability of VN2460

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X