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HUM2010/HUM2015/HUM2020 W ATE R TOW N DIVISI ON PIN DIODE HIGH POWER STUD DESCRIPTION KEY FEATURES W W W .Microsemi .COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance. Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical bonds on both sides to achieve high reliability and high surge capability. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com !"High Power Stud Mount Package !"High Zero Bias Impedance !"Very Low Inductance and Capacitance !"No Internal Lead Straps !"Small Mechanical Outline APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS * MRI Applications * High Power Antenna Switching ABSOLUTE MAXIMUM RATINGS Maximum Reverse Voltage Average Power Dissipation @ Stud = 50C Non-Repetitive Sinusoidal Surge Current (8.3 ms) Storage Temperature Range Operating Temperature Range Thermal Resistance 1000/1500/2000 V 13 W 100 A 65C to +175C 55C to +150C 7.5C / W Voltage Ratings [25C] Reverse Voltage Part type (VR) - Volts IR = 10A 1000V HUM2010 1500V HUM2015 2000V HUM2020 E L E C T R I C A L S P E C I F I C A T I O N S [25C] Test Diode Resistance RS Capacitance CT Reverse Current IR Carrier Lifetime Parallel Resistance RP Forward Voltage Vf 10 200 0.85 1.0 30 Min Typ 0.10 3.4 Max 0.20 4.0 10 Units pF A s K V Conditions F = 4 MHz, If =0.5 A F = 1 MHz, 100 V VR @ Rated Voltage If =10 mA / 100 V F = 10 MHz, 100 V If = 0.5 A HUM2010/15/20 HUM2010/15/20 Copyright 2000 MSC0874.PDF 2000-08-23 Microsemi Watertown Division 580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235 Page 1 HUM2010/HUM2015/HUM2020 W ATE R TOW N DIVISI ON PIN DIODE HIGH POWER STUD W W W .Microsemi .COM HUM2010, 15, 20 TYPICAL 101 16 HUM2010, 15, 20 TYPICAL 12 Rs @ 4 MHz (Ohms) 100 Ct @ 1 MHz (pF) 8 10-1 4 10-2 100 101 If (mA) 102 103 0 10-1 100 101 102 Vr (V) HUM2010, 15, 20 TYPICAL 101 HUM2010, 15, 20 TYPICAL 106 1 MHz 105 104 100 10-1 Rp (KOhms) If (A) 103 102 101 100 MHz 10-2 10-3 0.3 0.5 0.7 0.9 1.1 1.3 1.5 100 0 10 20 30 40 50 60 70 80 90 100 Vf (V) Vr (V) GRAPHS GRAPHS Copyright 2000 MSC0874.PDF 2000-08-23 Microsemi Watertown Division 580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235 Page 2 HUM2010/HUM2015/HUM2020 W ATE R TOW N DIVISI ON PIN DIODE HIGH POWER STUD W W W .Microsemi .COM MECHANICALS MECHANICALS Copyright 2000 MSC0874.PDF 2000-08-23 Microsemi Watertown Division 580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235 Page 3 HUM2010/HUM2015/HUM2020 W ATE R TOW N DIVISI ON PIN DIODE HIGH POWER STUD W W W .Microsemi .COM NOTES NOTES Copyright 2000 MSC0874.PDF 2000-08-23 Microsemi Watertown Division 580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235 Page 4 |
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