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| SM-8 DUAL NPN MEDIUM POWER TRANSISTORS ISSUE 2 - AUGUST 1997 B1 E1 B2 E2 ZDT651 C1 C1 C2 C2 PARTMARKING DETAIL T651 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE 80 60 5 6 2 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT651 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 140 0.12 0.23 0.9 0.8 200 200 170 80 175 30 45 800 80 60 5 0.1 10 0.1 0.3 0.5 1.25 1 TYP. MAX. UNIT V V V A A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=60V VCB=60V,T amb =100C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* V V V V 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=100mA, VCE=5V f=100MHz VCB=10V f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZDT651 TYPICAL CHARACTERISTICS 0.6 0.5 225 - (Volts) 0.4 IC/IB=10 0.3 - Gain 175 VCE=2V 125 0.2 V 0.1 h 75 0 0.0001 0.001 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 1.2 1.0 VCE=2V 0.8 - (Volts) 1.0 IC/IB=10 0.8 V V 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) - (Volts) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC td tr tf ns 140 ts ns 1400 IB1=IB2=IC/10 120 1200 ts Switching time 100 1000 80 800 td 60 600 tf 40 400 tr 20 200 0 0 0.01 0.1 1 IC - Collector Current (Amps) Switching Speeds |
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