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NPN Silicon Transistors for High Voltages
SMBTA 42 SMBTA 43
High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: SMBTA 92, SMBTA 93 (PNP)
q
Type SMBTA 42 SMBTA 43
Marking s1D s1E
Ordering Code (tape and reel) Q68000-A6478 Q68000-A6482
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS = 74 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg
Values SMBTA 42 SMBTA 43 300 300 200 200 6 500 100 360 150 - 65 ... + 150
Unit V
mA mW C
280 210
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBTA 42 SMBTA 43
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBTA 42 SMBTA 43 Collector-base breakdown voltage IC = 100 A SMBTA 42 SMBTA 43 Emitter-base breakdown voltage IE = 100 A Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 C VCB = 160 V, TA = 150 C Emitter-base cutoff current VEB = 3 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) SMBTA 42 SMBTA 43 SMBTA 42 SMBTA 43 IEB0 hFE 25 40 40 40 VCEsat - - VBEsat - - - - 0.5 0.4 0.9 - - - - - - - - V V(BR)CE0 300 200 V(BR)CB0 300 200 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 20 20 100 nA nA
A A
Values typ. max.
Unit
V - - - - - - - - - -
6
nA -
SMBTA 42 SMBTA 43
Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA SMBTA 42 SMBTA 43 Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 20 V, f = 1 MHz SMBTA 42 SMBTA 43
fT Cobo
50
-
-
MHz pF
- -
- -
3 4
1)
Pulse test conditions: t 300 s, D = 2 %.
Semiconductor Group
2
SMBTA 42 SMBTA 43
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz
Permissible pulse load Ptot max/Ptot DC = f (tp)
Operating range IC = f (VCE0) TA = 25 C, D = 0
Semiconductor Group
3
SMBTA 42 SMBTA 43
Collector cutoff current ICB0 = f (TA) VCB = 160 V
Collector current IC = f (VBE) VCE = 10 V
DC current gain hFE = f (IC) VCE = 10 V
Semiconductor Group
4

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