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| VISHAY MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features * * * * Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry Standard Dual-in line 6-pin package 5300 VRMS isolation test voltage A C NC 1 2 3 6B 5C 4E Agency Approvals * UL - File No. E52744 System Code H or J * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * CSA 93751 * BSI IEC60950 IEC60965 i179004 Applications AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection For additional design information see Application Note 45 These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available also in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Order Information Part MCT270 MCT271 Remarks CTR > 50 %, DIP-6 CTR 45 - 90 %, DIP-6 CTR 75 - 150 %, DIP-6 CTR 125 - 250 %, DIP-6 CTR 225 - 400 %, DIP-6 CTR 70 - 210 %, DIP-6 CTR 15 - 60 %, DIP-6 CTR > 100 %, DIP-6 CTR > 50 %, SMD-6 (option 9) CTR > 100 %, SMD-6 (option 9) Description The MCT27x family is an Industry Standard Single Channel Phototransistor Couplers. It includes the MCT270/ 271/ 272/ 273/ 274/ 275/ 276/ 277 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available by ordering option 1. MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 MCT270-X009 MCT277-X009 For additional information on the available options refer to Option Information. Document Number 83724 Rev. 1.4, 19-Apr-04 www.vishay.com 1 MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Surge current Power dissipation t < 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW Output Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current t < 1.0 ms Power dissipation IC IC Pdiss Test condition Symbol VCEO Value 70 7.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE0303,part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature max. 10 s dip soldering: distance to seating plane 1.5mm RIO RIO Tamb Tamb Tj Tsld Test condition Symbol VISO Value 5300 7.0 7.0 0.4 175 1012 10 11 Unit VRMS mm mm mm C C C C - 55 to + 150 - 55 to + 100 100 260 www.vishay.com 2 Document Number 83724 Rev. 1.4, 19-Apr-04 VISHAY Electrical Characteristics MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 20 mA VR = 3.0 V VR = 0, f = 1.0 MHz Symbol VF IR CO 25 Min Typ. Max 1.5 10 Unit V A pF Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Collector-emitter leakage current Test condition IC = 10 A, IF = 0 mA IE = 10 A, IF = 0 mA IC = 10 A, IF = 0 mA VCE = 10 V, IF = 0 mA Symbol BVCEO BVECO BVCBO ICEO Min 30 7.0 70 50 Typ. Max Unit V V V nA Coupler Parameter Resistance, input to output Capacitance (input-output) Collector-emitter saturation voltage ICE = 2.0 mA, IF = 16 mA Test condition VIO = 500 VDC Symbol RIO CIO VCEsat Min Typ. 10 12 Max Unit pF 0.5 0.4 V Current Transfer Ratio Parameter DC Current Transfer Ratio Test condition VCE = 10 V, IF = 10 mA Part MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 Current Transfer Ratio (collector-emitter) VCE = 0.4 V, IF = 16 mA MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 Symbol CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRCE CTRCE CTRCE CTRCE CTRCE CTRCE CTRCE Min 50 45 75 125 225 70 15 100 12.5 12.5 12.5 12.5 12.5 12.5 40 90 150 250 400 210 60 Typ. Max Unit % % % % % % % % % % % % % % % Document Number 83724 Rev. 1.4, 19-Apr-04 www.vishay.com 3 MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors Switching Characteristics Parameter Switching time Test condition IC = 2.0 mA, RL = 100 , VCE = 5.0 V Part MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT277 MCT276 Symbol ton, toff ton, toff ton, toff ton, toff ton, toff ton, toff ton, toff ton, toff Min Typ. Max 10 7.0 10 20 25 15 15 3.5 VISHAY Unit s s s s s s s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.4 VF - Forward Voltage - V 1.5 TA = -55C TA = 25C NCTR - Normalized CTR 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 i4n25_01 Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V 1.0 TA=50C 0.5 NCTR(SAT) NCTR TA = 85C 0.0 1 10 IF - Forward Current - mA 100 i4n25_03 .1 1 10 IF- LED Current - mA 100 Fig. 1 Forward Voltage vs. Forward Current Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED Current 1.5 NCTR - Normlized CTR NCTR - Normalized CTR Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V 1.5 Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V 1.0 TA=25C 1.0 TA=70C 0.5 NCTR(SAT) NCTR 0.5 NCTR(SAT) NCTR 0.0 0 i4n25_02 0.0 .1 100 i4n25_04 1 10 IF - LED Current - mA 1 10 IF - LED Current - mA 100 Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED Current Fig. 4 Normalized Non-saturated and saturated CTR vs. LED Current www.vishay.com 4 Document Number 83724 Rev. 1.4, 19-Apr-04 VISHAY MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors 1.5 NCTR - Normalized CTR NCTRcb - Normalized CTRcb Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce = 0.4 V 1.5 Normalized to: Vcb=9.3 V, IF=10 mA, TA=25C 1.0 TA=85C 1.0 0.5 NCTR(SAT) NCTR 0.5 25C 50C 70C 0.0 .1 1 10 100 0.0 .1 1 10 IF - LED Current - mA 100 IF - LED Current - mA i4n25_08 i4n25_05 Fig. 5 Normalized Non-saturated and saturated CTR vs. LED Current Fig. 8 Normalized CTRcb vs. LED Current and Temp. 35 Ice - Collector Current - mA 10 Normalized to: IF=10 mA, TA=25C 30 25 20 15 10 5 0 0 10 20 30 40 50 60 IF - LED Current - mA 70C 25C 85C 50C Normalized Photocurrent 1 1 0. Nib, TA=-20C Nib, TA= 25C Nib, TA= 50C Nib, TA= 70C 0.01 .1 i4n25_09 1 10 100 i4n25_06 IF - LED Current - mA Fig. 6 Collector-Emitter Current vs. Temperature and LED Current Fig. 9 Normalized Photocurrent vs. IF and Temp. 10 Iceo - Collector-Emitter - nA 5 4 1.2 NHFE - Normalized HFE 70C 10 10 3 1.0 -20C 0.8 25C 10 2 10 10 1 0 Vce = 10 V Typical 0.6 Normalized to: Ib=20 A, Vce=10 V, TA=25C 10 -1 10 -2 -20 0 20 40 60 80 100 0.4 i4n25_10 1 TA - Ambient Temperature - C i4n25_07 10 100 Ib - Base Current - A 1000 Fig. 7 Collector-Emitter Leakage Current vs.Temp. Fig. 10 Normalized Non-saturated HFE vs. Base Current and Temperature Document Number 83724 Rev. 1.4, 19-Apr-04 www.vishay.com 5 MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors VISHAY NHFE(sat) - Normalized Saturated HFE 1.5 Normalized to: Vce=10 V, Ib=20 A T A =25C F=10 KHz, DF=50% VCC = 5.0 V RL VO IF=1 0 mA 70C 1.0 25C -20C 0.5 50C Vce=0.4 V 0.0 1 10 100 1000 i4n25_14 i4n25_11 Ib - Base Current - A Fig. 11 Normalized HFE vs. Base Current and Temp. Fig. 14 Switching Schematic 1000 tPLH - Propagation Delay - s 2.5 tPHL - Propagation Delay - s IF =10 mA,TA=25C VCC =5.0 V, Vth=1.5 V 100 tPHL 2.0 10 tPLH 1.5 1 .1 i4n25_12 1.0 1 10 100 RL - Collector Load Resistor - k Fig. 12 Propagation Delay vs. Collector Load Resistor IF VO tD tR tPLH VTH=1.5 V tPHL tS tF i4n25_13 Fig. 13 Switching Timing www.vishay.com 6 Document Number 83724 Rev. 1.4, 19-Apr-04 VISHAY Package Dimensions in Inches (mm) pin one ID MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Package Dimensions in Inches (mm) SMD .343 (8.71) .335 (8.51) Pin one I.D. .030 (.76) .256 (6.50) .248 (6.30) .100 (2.54) R .010 (.25) .070 (1.78) .315 (8.00) min .435 (11.05) .060 (1.52) .050 (1.27) typ. ISO Method A .039 (0.99) min. .052 (1.33) .048 (1.22) .150 (3.81) .130 (3.30) .0098 (.25) .0040 (.10) .040 (1.016) .020 (0.508) .395 (10.03) .375 (9.63) .300 (7.62) typ. 3 to 7 18 .012 (0.31) .008 (0.20) 4 .100 (2.54) i178002 .315 (8.00) min. Document Number 83724 Rev. 1.4, 19-Apr-04 www.vishay.com 7 MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors VISHAY Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .0040 (.102) .0098 (.249) .020 (.51) .040 (1.02) .012 (.30) typ. .315 (8.00) min. 15 max. 18449 www.vishay.com 8 Document Number 83724 Rev. 1.4, 19-Apr-04 VISHAY MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83724 Rev. 1.4, 19-Apr-04 www.vishay.com 9 |
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