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| CM100DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM H-Series Module 100 Amperes/1400 Volts A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J N J N J .110 TAB M D F Q Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G2 E2 C2E1 E2 C1 E1 G1 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100DY-28H is a 1400V (VCES), 100 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 28 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.1500.01 1.89 1.18 Max. 0.90 0.83 0.71 0.67 0.63 Millimeters 94.0 80.00.25 48.0 30.0 Max. 23.0 21.2 18.0 17.0 16.0 Dimensions K L M N P Q R S Inches 0.51 0.47 0.30 0.28 0.256 Dia. 0.26 M5 Metric 0.16 Millimeters 13.0 12.0 7.5 7.0 Dia. 6.5 6.5 M5 4.0 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DY-28H Dual IGBTMODTM H-Series Module 100 Amperes/1400 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current Peak Collector Current Emitter Current Emitter Current-Pulse Maximum Collector Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation * IE, VEC, Trr, Qrr & diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). ** Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tj(max) rating. *** Junction temperature (Tj) should not increase beyond 150C. Symbol Tj Tstg VCES VGES IC ICM IE* IEM* Pc - - - VRMS CM100DY-28H -40 to 150 -40 to 125 1400 20 100 200** 100 200** 780*** 17 26 270 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V IC = 100A, VGE = 15V, Tj = 125C Total Gate Charge VCC = 800V, IC = 100A, VGE = 15V * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Min. - - 5.0 - - - Typ. - - 6.5 3.1 2.95 510 Max. 1.0 0.5 8.0 4.2* - - Units mA A Volts Volts Volts nC Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr VEC Qrr IE = 100A, diE/dt = -300A/s IE = 100A, VGE = 0V IE = 100A, diE/dt = -300A/s VCC = 800V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - - Typ. - - - - - - - - - 1.0 Max. 20 7 4 250 400 300 500 300 3.8 - Units nF nF nF ns ns ns ns ns V Diode Reverse Recovery Time Emitter-Collector Voltage Diode Reverse Recovery Charge C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.16 0.35 0.13 Units C/W C/W C/W 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DY-28H Dual IGBTMODTM H-Series Module 100 Amperes/1400 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) 160 VGE = 20V 11 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 13 15 200 12 VCE = 10V Tj = 25C Tj = 125C 5 VGE = 15V Tj = 25C Tj = 125C 4 120 120 3 80 10 80 2 40 7 9 8 40 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 0 4 8 12 16 20 0 40 80 120 160 200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C Tj = 25C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 102 101 Cies 6 IC = 200A 4 IC = 100A Coes 101 100 VGE = 0V f = 1MHz Cres 2 IC = 40A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, t rr, (ns) 103 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 IC = 100A 16 VCC = 600V VCC = 800V SWITCHING TIME, (ns) 103 td(off) tf td(on) VCC = 800V VGE = 15V RG = 3.1 Tj = 125C t rr 101 12 102 Irr 8 102 100 di/dt = -200A/sec Tj = 25C 4 tr 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 10-1 103 0 0 200 400 600 800 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DY-28H Dual IGBTMODTM H-Series Module 100 Amperes/1400 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.16C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.35C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
Price & Availability of CM100DY-28H
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