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| BUZ 110 SL SPP80N05L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Logic Level * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.015 Package Ordering Code BUZ 110 SL TO-220 AB Q67040-S4004-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 C TC = 100 C ID A 80 59 Pulsed drain current TC = 25 C IDpuls 320 E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 L = 144 H, Tj = 25 C mJ 460 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 80 20 A mJ kV/s dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 C 14 200 V W Semiconductor Group 1 28/Jan/1998 BUZ 110 SL SPP80N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 C 0.75 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 200 A V GS(th) 1.2 IDSS 1.67 2 A Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 4.5 V, ID = 59 A V GS = 10 V, ID = 59 A 0.012 0.0075 0.015 0.01 Semiconductor Group 2 28/Jan/1998 BUZ 110 SL SPP80N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 59 A gfs S 30 pF 2600 3250 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 750 940 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 395 495 ns Turn-on delay time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 tr 20 30 Rise time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 td(off) 70 105 Turn-off delay time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 tf 45 70 Fall time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 2 Qg(th) 25 40 nC Gate charge at threshold V DD = 40 V, ID 0.1 A, V GS =0 to 1 V Qg(5) 4 6 Gate charge at 5.0 V V DD = 40 V, ID = 80 A, VGS =0 to 5 V Qg(total) 65 100 Gate charge total V DD = 40 V, ID = 80 A, VGS =0 to 10 V V (plateau) 110 165 V Gate plateau voltage V DD = 40 V, ID = 80 A - 4.5 - Semiconductor Group 3 28/Jan/1998 BUZ 110 SL SPP80N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 80 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 320 V Inverse diode forward voltage V GS = 0 V, IF = 160 A trr 1.2 2 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 90 135 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.14 0.21 Semiconductor Group 4 28/Jan/1998 BUZ 110 SL SPP80N05L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 4 V 90 A ID 70 60 220 W Ptot 180 160 140 120 100 80 60 50 40 30 20 40 20 0 0 20 40 60 80 100 120 140 C 180 10 0 0 20 40 60 80 100 120 140 C 180 TC TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 10 2 R DS (o n) = V ID /I D A DS t = 8.7s p 10 s K/W ZthJC 10 -1 100 s 10 -2 D = 0.50 0.20 10 1 1 ms 0.10 10 -3 0.05 0.02 single pulse 0.01 10 ms DC 10 0 0 10 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 28/Jan/1998 BUZ 110 SL SPP80N05L Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 180 A ID 140 120 e VGS [V] f a 2.5 b c d e 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.050 Ptot = 200W l kj i h g 0.040 RDS (on) 0.035 0.030 0.025 0.020 0.015 0.010 b a a b c d e 100 80 60 c f g dh i j k l 40 20 0 0.005 0.000 V 5.0 0 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 f g hi j k k 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 40 60 80 100 120 A 160 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 70 A I D 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 28/Jan/1998 BUZ 110 SL SPP80N05L Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 59 A, VGS = 4.5 V 0.050 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS,ID = 200A 3.0 V 2.6 RDS (on) 0.040 0.035 0.030 0.025 98% 0.020 typ 0.015 0.010 0.005 0.000 -60 -20 20 60 100 C 180 VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 -20 20 60 100 140 V Tj max typ min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 A C pF Ciss IF 10 2 10 3 Coss 10 1 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 28/Jan/1998 BUZ 110 SL SPP80N05L Avalanche energy EAS = f (Tj) parameter:ID=80 A,VDD =25 V RGS =3.8 , L = 144 H 500 mJ EAS Typ. gate charge VGS = (QGate) parameter: ID puls = 80 A 16 V VGS 400 350 300 250 200 150 12 10 8 0,2 VDS max 6 0,8 VDS max 4 100 50 0 20 40 60 80 100 120 140 C Tj 2 0 180 0 20 40 60 80 100 120 nC 160 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 28/Jan/1998 |
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