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DISCRETE SEMICONDUCTORS
DATA SHEET
BGY205 UHF amplifier module
Product specification Supersedes data of May 1994 1996 May 21
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES * 6 V nominal supply voltage * 3.5 W pulsed output power * Easy control of output power by DC voltage. APPLICATIONS * Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range. DESCRIPTION The BGY205 is a four-stage UHF amplifier module in a SOT321B package. The module consists of four NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. PINNING - SOT321B PIN 1 2 3 4 Flange RF input VC VS RF output ground
BGY205
DESCRIPTION
1 Top view
2
3
4
MSA489
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Tmb = 25 C. MODE OF OPERATION Pulsed; = 1 : 8 f (MHz) 880 to 915 VS (V) 6 VC (V) 4 PL (W) 3.5 Gp (dB) 32.5 (%) 40 ZS; ZL () 50
1996 May 21
2
Philips Semiconductors
Product specification
UHF amplifier module
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb DC supply voltage DC control voltage input drive power load power storage temperature operating mounting base temperature PARAMETER - - - - -40 -30 MIN. MAX. 8.5 4.5 7 4 +100 +100
BGY205
UNIT V V mW W C C
CHARACTERISTICS ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; VC 4 V; f = 880 to 915 MHz; Tmb = 25 C; = 1 : 8; tp = 575 s; unless otherwise specified. SYMBOL IQ IC PL Gp H2 H3 VSWRin PARAMETER leakage current control current load power power gain efficiency second harmonic third harmonic input VSWR stability VC = 0.5 V adjust VC for PL = 3.5 W VC = 4 V adjust VC for PL = 3.5 W adjust VC for PL = 3.5 W adjust VC for PL = 3.5 W adjust VC for PL = 3.5 W adjust VC for PL = 3.5 W PD = 0 to 6 dBm; VS = 5 to 8.5 V; VC = 0 to 4 V; PL 3.5 W; VSWR 6 : 1 through all phases VC = 0.5 V R1 = 0; C1 = 0; see Fig.16 PD with 3% AM; f = 100 kHz; PL = 3.5 mW to 3.5 W PL = 3.5 W; bandwidth = 30 kHz; 20 MHz above transmitter band VS = 8.5 V; adjust VC for PL = 3.5 W; VSWR 10 : 1 through all phases CONDITIONS - - 3.5 32.5 40 - - - - MIN. - - - - 45 - - - - TYP. MAX. 100 500 - - - -40 -40 2:1 -60 dBc UNIT A A W dB % dBc dBc
isolation control bandwidth AM-AM conversion Pn noise power ruggedness
- 1 - -
- - - -
-36 - 12 -85
dBm MHz % dBm
no degradation
1996 May 21
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG742
handbook, halfpage
40
PL (dBm) 30
40 PL (dBm) 30 915 MHz 880 MHz
MBG741
20 880 MHz 20 915 MHz 10
0 10 -10 -20 -20
0 2.5
2.7
2.9
3.1
3.3
3.5 VC (V)
-15
-10
-5
0 5 PD (dBm)
ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; Tmb = 25 C; = 1 : 8; tp = 575 s.
ZS = ZL = 50 ; VS = 6 V; PL = 3.5 mW; Tmb = 25 C; = 1 : 8; tp = 575 s.
Fig.2
Load power as a function of control voltage; typical values.
Fig.3
Load power as a function of drive power; typical values.
output amplitude modulation (%)
handbook, halfpage
12
MBG740
MBG739
handbook, halfpage
50
10
(%) 40
915 MHz
8
890 MHz
6 880 MHz 4 915 MHz 2
30
20
0 0 10 20 30 PL (dBm) 40
10 0 1 2 3 P L (W) 4
ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; Tmb = 25 C; = 1 : 8; tp = 575 s; input amplitude modulation = 3%.
ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; Tmb = 25 C; = 1 : 8; tp = 575 s.
Fig.4
Output amplitude modulation as a function of load power; typical values.
Fig.5
Efficiency as a function of load power; typical values.
1996 May 21
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG736
MBG735
handbook, halfpage
5
handbook, halfpage
5
PL (W) 4
VC (V) 4
3
3
2
2
1
1
0 880
890
900
910
f (MHz)
920
0 880
890
900
910
f (MHz)
920
ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; VC = 4 V; Tmb = 25 C; = 1 : 8; tp = 575 s.
ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; PL = 3.5 W; Tmb = 25 C; = 1 : 8; tp = 575 s.
Fig.6
Load power as a function of frequency; typical values.
Fig.7
Control voltage as a function of frequency; typical values.
30 H 2 , H3 (dBc) 40 H2 50 H3 60
MBG738
MBG734
handbook, halfpage
10
phase (deg) -10
-30
70
-50
80 880
890
900
910
f (MHz)
920
-70
0
1
2
f (MHz)
3
ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; PL = 3.5 W; Tmb = 25 C; = 1 : 8; tp = 575 s.
ZS = ZL= 50 ; PD = 3 dBm; VS = 6 V; PL = 15 to 35.4 dBm; f = 880 to 915 MHz; Tmb = 25 C; = 1 : 8; tp = 575 s; R1 = 0; C1 = 0.
Fig.8
Harmonics as a function of frequency; typical values.
Fig.9
Control loop phase as a function of frequency on the control pin; typical values.
1996 May 21
5
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
handbook, halfpage
25
MBG730
handbook, halfpage
25
MBG731
Gv 20 915 MHz 15 880 MHz 10
Gv 20 915 MHz 15 880 MHz 10
5
5
0 0 1 2 3 f (MHz) 4
0 0 1 2 3 f (MHz) 4
PL = 30 dBm. ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; Tmb = 25 C; = 1 : 8; tp = 575 s; R1 = 0; C1 = 0.
PL = 25 dBm. ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; Tmb = 25 C; = 1 : 8; tp = 575 s; R1 = 0; C1 = 0.
Fig.10 Control loop voltage gain as a function of frequency on the control pin; typical values.
Fig.11 Control loop voltage gain as a function of frequency on the control pin; typical values.
handbook, halfpage
25
MBG729
handbook, halfpage
25
MBG728
Gv 20
Gv 20
15
915 MHz
15 915 MHz
880 MHz 10 10 880 MHz
5
5
0 0 1 2 3 f (MHz) 4
0 0 1 2 3 f (MHz) 4
PL = 20 dBm. ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; Tmb = 25 C; = 1 : 8; tp = 575 s; R1 = 0; C1 = 0.
PL = 15 dBm. ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; Tmb = 25 C; = 1 : 8; tp = 575 s; R1 = 0; C1 = 0.
Fig.12 Control loop voltage gain as a function of frequency on the control pin; typical values.
Fig.13 Control loop voltage gain as a function of frequency on the control pin; typical values.
1996 May 21
6
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG732
MBG733
handbook, halfpage
4
handbook, halfpage
4
VC (V) 3.5 PL = 35.4 dBm
VC (V) 3.5 PL = 35.4 dBm
3 30 dBm 20 dBm 2.5 10 dBm
3 30 dBm 20 dBm 2.5 10 dBm
2 -40
0
40
Tmb (oC)
80
2 -40
0
40
Tmb (oC)
80
f = 880 MHz. ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; = 1 : 8; tp = 575 s.
f = 915 MHz. ZS = ZL = 50 ; PD = 3 dBm; VS = 6 V; = 1 : 8; tp = 575 s.
Fig.14 Control voltage as a function of mounting base temperature; typical values.
Fig.15 Control voltage as a function of mounting base temperature; typical values.
handbook, full pagewidth
C1
C2
Z1
R1 C3 C4 typ. 1.35 A
L1
Z2
RF input
VC
MBG743
VS
RF output
Fig.16 Test circuit.
1996 May 21
7
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
handbook, full pagewidth
90 1 2 3 4
50 input
50 output
60
VC Dimensions in mm.
VS
MSA915
Fig.17 Printed-circuit board layout.
List of components (see Fig.16) COMPONENT C1, C2 C3 C4 L1 Z1, Z2 R1 Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.2); thickness 1 inch. 32 DESCRIPTION multilayer ceramic chip capacitor tantalum capacitor electrolytic capacitor Grade 4S2 Ferroxcube bead stripline; note 1 metal film resistor 50 100 ; 0.6 W VALUE 680 pF 2.2 F; 35 V 47 F; 40 V DIMENSIONS - 2222 030 37479 4330 030 36300 width = 2.33 mm - 2322 156 11001 CATALOGUE NO. 2222 851 11681
1996 May 21
8
Philips Semiconductors
Product specification
UHF amplifier module
SOLDERING The indicated temperatures are those at the solder interfaces. Advised solder types are types with a liquidus less than or equal to 210 C. Solder dots or solder prints must be large enough to wet the contact areas. Footprints for soldering should cover the module contact area +0.1 mm on all sides. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 C and damage the module. The maximum temperature profile and soldering time is indicated as follows (see Fig.18): t = 350 s at 100 C t = 300 s at 125 C t = 200 s at 150 C t = 100 s at 175 C t = 50 s at 200 C t = 5 s at 250 C (maximum temperature). Cleaning The following fluids may be used for cleaning: * Alcohol * Bio-Act (Terpene Hydrocarbon) * Triclean B/S * Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product.
100
BGY205
handbook, halfpage
300
MLB740
T mb ( oC) 200
0 0 100 200 300 t (s) 400
Fig.18 Maximum allowable temperature profile.
1996 May 21
9
Philips Semiconductors
Product specification
UHF amplifier module
PACKAGE OUTLINE
BGY205
handbook, full pagewidth
25.0 24.6 22.1 21.7 3.0 2.6
1.65 1.25
4.3 3.9 3.1 (4x) 2.9 5.1 4.9 13.4 13.0
2.4 2.2
1
2
3 0.55 (4x) 0.45
4
1.2 min 0.25 M (4x) 0.1
MSA397
3.7 3.3
0.30 0.20
5.08
7.62
5.08
Dimensions in mm.
Fig.19 SOT321B.
1996 May 21
10
Philips Semiconductors
Product specification
UHF amplifier module
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BGY205
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 May 21
11

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