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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166W/D The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET * Push-Pull Configuration Reduces Even Numbered Harmonics * Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficiency = 50% * Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% * Excellent Thermal Stability, Ideally Suited for Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques * 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR * Low Crss -- 4.5 pF @ VDS = 28 Volts * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. Designed primarily for wideband large-signal output and driver stages to 500 MHz. MRF166W 40 W, 500 MHz TMOS BROADBAND RF POWER FET CASE 412-01, Style 1 1 3 5 4 FLANGE 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-Gate Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 40 8.0 175 1.0 - 65 to +150 200 Unit Vdc Vdc Adc ADC Watts C/W C C THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case RJC 1.0 C/W NOTE: Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF166W 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 5.0 mA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 40 Vdc, VDS = 0 Vdc) V(BR)DSS 65 IDSS -- IGSS -- -- 1.0 -- 1.0 A -- -- mA Vdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS= 10 Vdc, ID = 25 mA) Forward Transconductance (VDS= 10 Vdc, ID = 1.5 A) VGS(th) 1.0 gfs 600 800 -- 3.0 6.0 mS Vdc DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss -- Coss -- Crss -- 4.5 -- 35 -- pF 30 -- pF pF FUNCTIONAL CHARACTERISTICS (2) Common Source Power Gain (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) Drain Efficiency (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) Electrical Ruggedness (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) Load VSWR = 30:1, All phase angles at frequency of test (1) Each transistor chip measured separately. (2) Both transistor chips operating in a push-pull amplifier. Gps 11 45 No Degradation in Output Power 50 -- 13 -- % dB MRF166W 2 MOTOROLA RF DEVICE DATA B R7 A R2 R1 C14 D1 C22 C15 RFC2 A T1 C2 RF INPUT C3 C21 Z2 L1 C23 C4 Z1 L2 Z4 Z3 L3 C5 Z6 L4 R5 R6 C11 A C20 C12 RFC3 B C19 Z9 Z10 C9 Z5 C13 R4 R3 Z7 D.U.T. C6 C7 C10 Z8 C8 T2 RFC1 C16 VDD 28 V + C17 + C18 Vdc - - RF OUTPUT C1 L3, L4 0.065 L1, L2 0.116 0.265 0.455 C1, C2, C8, C9, C12, C13, C15 C3 C4 C5 C6 C7 C10, C11, C14, C19, C20, C21, C22 C16, C17 C18 C23 D1 L1, L2 L3, L4 270 pF, Chip Cap 5.6 pF, Chip Cap 20 pF, Chip Cap 0 - 20 pF, Johanson* 8.2 pF, Chip Cap 15 pF, Chip Cap 0.01 F 680 pF, Feedthru 10 F, 50 V 0 - 10 pF, Johanson* IN5343 - Motorola Zener Hair Pin Inductor #18 AWG, 0.065 W x 0.265 H Hair Pin Inductor #18 AWG, 0.116 W x 0.445 H RFC1 RFC2, RFC3 R1 R2 R3, R6 R4 R5 R7 T1, T2 Z1, Z2 Z3, Z4 Z5, Z6 Z7, Z9 Z8, Z10 Ferroxcube VK-200-19/4B 10T, ID = 1/4, 18 AWG 10 k, 10T 9.2 k, 1/2 W 330 , 1.0 W 520 , 1/4 W 1.5 k, 1/2 W Balun 2.0, 50 Semi-Rigid Coax 0.120 x 0.467 0.120 x 0.55 * 0.120 x 0.49 0.120 x 0.85 0.120 x 0.6 for C6 * C4, C5 Center of Z3 and Z4 Board Material - Teflon(R) Fiberglass Dielectric Thickness = 0.030, r = 2.55 Copper Clad, 2.0 oz. Copper Figure 1. MRF166 400 MHz Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF166W 3 50 45 Pout , OUTPUT POWER (WATTS) 40 35 30 25 20 15 10 5 0 0 f = 175 MHz Pout , OUTPUT POWER (WATTS) 400 MHz 500 MHz 45 40 35 30 25 20 15 10 5 4 0 12 14 f = 400 MHz IDQ = 100 mA Pin = 3.0 W 2.0 W 1.0 W 0.5 W VDD = 28 Vdc IDQ = 200 mA 1 2 3 Pin, INPUT POWER (WATTS) 16 18 20 22 24 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 26 28 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Voltage 40 Pout , OUTPUT POWER (WATTS) 35 30 25 20 15 10 5 0 -10 - 9 - 8 -7 - 6 - 5 - 4 - 3 - 2 -1 0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1 2 3 f = 400 MHz TYPICAL DEVICE SHOWN, VGS(th) = 3.0 V VDD = 28 Vdc IDQ = 100 mA C, CAPACITANCE (pF) 100 90 80 70 60 50 40 30 20 10 0 0 4 Crss 8 12 16 20 24 28 Ciss Coss VGS = 0 V f = 1.0 MHz VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 4. Output Power versus Gate Voltage Figure 5. Capacitance versus Voltage MRF166W 4 MOTOROLA RF DEVICE DATA Zin 400 ZOL* f = 500 MHz f = 500 MHz 400 175 175 Zo = 50 VDD = 28 Vdc, IDQ = 100 mA, Pout = 40 W f MHz 175 400 500 Zin Ohms 3.7 - j 22.4 3.6 - j 10.99 2.6 - j 3.2 ZOL* Ohms 15.2 - j 16.6 10.3 - j 7.99 10.2 + j 0.5 NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively. ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Table 1. Input and Output Impedances Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF166W 5 PACKAGE DIMENSIONS -A- U G Q 2 PL 0.51 (0.020) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K N Q U INCHES MIN MAX 0.965 0.985 0.245 0.265 0.165 0.185 0.050 0.070 0.070 0.080 0.254 BSC 0.095 0.105 0.003 0.006 0.625 0.675 0.495 0.520 0.120 0.140 0.725 BSC DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 24.52 25.01 6.23 6.73 4.20 4.69 1.27 1.77 1.78 2.03 6.45 BSC 2.42 2.66 0.08 0.15 15.88 17.14 12.58 13.20 3.05 3.55 18.42 BSC 1 2 K 3 4 5 -B- D 4 PL 0.51 (0.020) N M TA M B M J H E C -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 412-01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF166W 6 *MRF166W/D* MRF166W/D MOTOROLA RF DEVICE DATA |
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