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| SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1004MB/D The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. * Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Industry Standard Package * Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input Matching for Broadband Operation MRF1004MB 4.0 W, 960-1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332A-03, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 20 50 3.5 250 7.0 40 -65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RJC Max 25 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 20 50 50 3.5 -- -- -- -- -- -- -- -- -- -- 0.5 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 75 mAdc, VCE = 5.0 Vdc) hFE 10 -- 100 -- NOTES: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 8 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 35 Vdc, IE = 0, f = 1.0 MHz) Cob -- 3.3 5.0 pF FUNCTIONAL TESTS (Pulse Width = 10 s, Duty Cycle = 1.0%) Common-Base Amplifier Power Gain (VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz) Collector Efficiency (VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz) Load Mismatch (VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB No Degradation in Power Output 10 40 11 45 -- -- dB dB C1 L2 C2 C3 + - + VCC = 35 Vdc - RF INPUT Z1 Z2 Z3 D.U.T. Z4 Z5 Z6 C4 RF OUTPUT L1 C1 -- 0.1 F C2, C4 -- 220 pF Chip Capacitor C3 -- 20 F, 50 V Electrolytic L1, L2 -- 3 Turns #18 AWG, 1/8 ID Z1-Z6 Distributed Microstrip Elements, See Photomaster Board Material -- 0.031 Thick Glass Teflon Figure 1. 1090 MHz Test Circuit REV 8 2 TYPICAL CHARACTERISTICS 6.5 f = 0.96 GHz Pout , OUTPUT POWER (W pk) 5.5 Pout , OUTPUT POWER (W pk) 1.09 GHz 7 8 VCC = 35 V tP = 10 s D = 1% Pin = 650 mW pk 4.5 1.215 GHz VCC = 35 V tP = 10 s D = 1% 250 350 450 Pin, INPUT POWER (mW pk) 550 650 6 3.5 5 400 mW pk 2.5 150 4 960 1090 f, FREQUENCY (MHz) 1215 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 5 16 VCC = 35 V tP = 10 s D = 1% Pout , OUTPUT POWER (W pk) G PB , POWER GAIN (dB) 14 4 Pin = 400 mW pk tP = 10 s D = 1% f = 1090 MHz 3 12 Pout = 4 W pk 10 20 25 30 VCC, SUPPLY VOLTAGE (V) 35 8 960 1090 f, FREQUENCY (MHz) 1215 Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency +j50 +j25 Zin +j10 1090 1215 +j100 +j150 +j250 +j500 0 10 25 50 100 150 250 500 f = 960 MHz f MHz 960 1090 1215 Zin Ohms 5.0 + j17.5 10 + j23 16 + j29.5 ZOL* (Pin = 400 mW pk) Ohms 23.5 - j26 18.5 - j25 15.5 - j23.5 ZOL* (Pout = 4.0 W pk) Ohms 22.5 - j36 15 - j32.5 11 - j23 ZOL* (Pin = 650 mW pk) -j10 1090 f = 960 MHz 1090 f = 960 MHz -j100 -j500 -j250 -j150 1215 1215 -j25 ZOL* = Conjugate of the optimum load impedance into which the device ZOL* = output operates at a given output power, voltage, and frequency. ZOL* (Pout = 4 W pk) -j50 COORDINATES IN OHMS Figure 6. Series Equivalent Input/Output Impedance REV 8 3 TYPICAL CHARACTERISTICS Pout = 4 W pk VCC = 35 V tP = 1 ms D = 10% f = 1090 MHz Figure 7. Typical Long Pulse Performance REV 8 4 PACKAGE DIMENSIONS F 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A C D F H J K INCHES MIN MAX 0.270 0.290 0.115 0.135 0.195 0.205 0.095 0.105 0.050 0.070 0.003 0.007 0.600 --BASE EMITTER BASE COLLECTOR MILLIMETERS MIN MAX 6.86 7.36 2.93 3.42 4.96 5.20 2.42 2.66 1.27 1.77 0.08 0.17 15.24 --- K D H SEATING PLANE A J C STYLE 1: PIN 1. 2. 3. 4. CASE 332A-03 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 8 5 |
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