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| (R) Z00607MA Z00607DA SENSITIVE GATE TRIACS A2 A1 FEATURES IT(RMS) = 0.8A VDRM = 400V and 600V IGT = 5mA G DESCRIPTION The Z006607xA triacs are intended for general applications where high gate sensitivity is required. A1 G A2 TO92 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) Non repetitive surge peak on-state current (Tj initial = 110C, full cycle) I2t Tstg Tj Tl I2t Value for fusing Tl= 50 C tp = 8.3 ms tp = 10 ms F = 60Hz tp = 10 ms Value 0.8 10.5 10 8 0.5 - 40, + 150 - 40, + 110 260 A2s C C Unit A A Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 110C Z00607xA D 400 M 600 Unit V May 1999 - Ed: 1 1/4 Z00607DA / Z00607MA THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to lead Parameter Value 150 60 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=140 VD=12V (DC) RL=140 VD=VDRM RL=3.3k VD=VDRM IG = 25mA IT = 1.0A dIG/dt = 0.25A/s IT= 200 mA Gate open IG= 1.2 IGT ITM= 1.1A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 0.35 A/ms Tj= 25C Tj= 25C Tj= 110C Tj= 25C Quadrant I-II-III IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MAX MIN TYP Sensitivity 07 5 7 1.5 0.2 2 V V s Unit mA IGM = 1 A (tp = 20 s) IH * IL VTM * IDRM IRRM dV/dt * (dV/dt)c * Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C I-III-IV II MAX MAX MAX MAX MAX MAX MIN MIN 5 10 20 1.5 10 0.1 10 1.5 mA mA V A mA V/s V/s * For either polarity of electrode A2 voltage with reference to electrode A1 Fig 1: Maximum power dissipation versus RMS on-state current. Fig 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tlead). P(W) Tlead (C) 50 Rth(j-l) P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 =30 0.1 0.0 0.0 0.1 =180 =120 =90 =60 180 IT(RMS)(A) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 70 Rth(j-a) 90 =180 Tamb(C) 0 10 20 30 40 50 60 70 80 90 100 110 110 2/4 Z00607DA / Z00607MA Fig 3: RMS on-state current versus ambient temperature. Fig 4: Relative variation of thermal impedance junction to ambient versus pulse duration. IT(RMS)(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 =180 Rth(j-a)=Rth(j-l) K=[Zth(j-a)/Rth(j-a)] 1.00 0.10 Rth(j-a)=150C/W Tamb(C) 0 10 20 30 40 50 60 70 80 90 100 110 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). IGT,IH[Tj] / IGT,IH[Tj=25C] 2.5 2.0 1.5 IH IGT Fig 6: Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 9 8 7 6 5 4 3 2 1 0 Tj initial=25C F=50Hz 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 Number of cycles 1 10 100 1000 Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A),It(As) 50.0 ITSM Fig 8: On-state characteristics (maximum values). ITM(A) 10.0 Tj initial=25C Tj max.: Vto= 0.95 V Rd= 420 m 10.0 Tj=Tj max. 1.0 1.0 It Tj=25C tp(ms) 0.1 1 2 5 10 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/4 Z00607DA / Z00607MA PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS REF. A a B C Millimeters 1.35 4.70 2.54 4.40 12.70 3.70 0.45 0.100 0.053 Inches Typ. Min. Max. Typ. Min. Max. A B C D 0.185 0.173 0.500 0.146 0.017 F D E E F a Ordering type Z00607DA 1BA2 Z00607MA 1BA2 Marking Z0607DA Z0607MA Package TO92 TO92 Weight 0.2g. 0.2g. Base qty 2500 2500 Delivery mode Bulk Bulk Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 4/4 |
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