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PNP Silicon Switching Transistors
PZT 2907 PZT 2907 A
High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complementary types: PZT 2222 (NPN) PZT 2222 A (NPN)
q
Type PZT 2907 PZT 2907 A
Marking ZT 2907 ZT 2907 A
Ordering Code (tape and reel) Q62702-Z2028 Q62702-Z2025
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 110 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values PZT 2907 PZT 2907 A 40 60 60 5 600 1.5 150 - 65 ... + 150
Unit V
mA W C
87 27
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
PZT 2907 PZT 2907 A
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 PZT 2907 PZT 2907 A Collector-base breakdown voltage IC = 10 A, IB = 0 PZT 2907 PZT 2907 A Emitter-base breakdown voltage IE = 10 A, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150 C Emitter-base cutoff current VEB = 3 V, IC = 0 Collector-emitter cutoff current VCE = 30 V, + VBE = 0.5 V Collector-base cutoff current VCE = 30 V, + VBE = 0.5 V DC current gain1) IC = 0.1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V PZT 2907 PZT 2907 A PZT 2907 PZT 2907 A PZT 2907 PZT 2907 A PZT 2907 PZT 2907 A PZT 2907 PZT 2907 A PZT 2907 PZT 2907 A PZT 2907 PZT 2907 A IEB0 ICEV IEBV hFE 35 75 50 100 75 100 100 100 30 50 - - - - - - - - - - - - - - - - 300 300 - - V(BR)CE0 40 60 V(BR)CB0 60 60 V(BR)EB0 ICB0 - - - - - - - - - - - - - - 20 10 20 10 10 50 50 - nA nA
A A
Values typ. max.
Unit
V - - - - - - - - - -
5
nA
IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V
1)
Pulse test conditions: t 300 s, D = 2 %.
Semiconductor Group
2
PZT 2907 PZT 2907 A
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz VCC = 30 V, IC = 150 mA, IB1 = 15 mA Delay time Rise time VCC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA Storage time Fall time (see diagrams) fT Cobo Cibo 200 - - - - - - 8 30 MHz pF VCEsat - - VBEsat - - - - 1.3 2.6 - - 0.4 1.6 V Values typ. max. Unit
td tr tstg tf
- - - -
- - - -
10 40 80 30
ns ns ns ns
1)
Pulse test conditions: t 300 s, D = 2 %.
Semiconductor Group
3
PZT 2907 PZT 2907 A
Input waveform and test circuit for determining delay, rise and turn-on time Turn-on time when switched to -ICon = 150 mA; - IBon = 15 mA
Input waveform and test circuit for determining storage, fall and turn-off time Turn-off time when switched to - ICon = 150 mA; - IBon = 15 mA to cut-off with + IBoff = 15 mA
Pulse generator: duty factor pulse duration rise time output impedance
Semiconductor Group
D=2% tp = 200 ns tr 2 ns Zo = 50
4
Oscillograph: rise time output impedance
tr 5 ns Zi = 10 M
PZT 2907 PZT 2907 A
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Transition frequency fT = f (IC) VCE = 20 V, f = 100 MHz
Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10
DC current gain hFE = f (IC) VCE = 10 V
Semiconductor Group
5
PZT 2907 PZT 2907 A
Permissible pulse load Ptot max/Ptot DC = f (tp)
Semiconductor Group
6

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