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ZXMC3A16DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package
SO8
APPLICATIONS
* Motor Drive * LCD backlighting
Q1 = N-CHANNEL Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE ZXMC3A16DN8TA ZXMC3A16DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
ZXMC 3A16
Top view
PROVISIONAL ISSUE F - JULY 2004 1
ZXMC3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(d) @V GS =10V; T A =70 C (b)(d) @V GS =10V; T A =25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA=25C (a)(d) Linear Derating Factor Power Dissipation at TA=25C (a)(e) Linear Derating Factor Power Dissipation at TA=25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range
(b)
SYMBOL V DSS V GS ID
N-Channel P-Channel 30 20 6.4 5.1 4.9 30 3.4 30 1.25 10 1.8 14 2.1 17 -55 to +150 -30 20 -5.4 -4.3 -4.1 -25 -3.2 -25
UNIT V V A A A A A A W mW/C W mW/C W mW/C C
I DM IS I SM PD PD PD T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient Junction to Ambient Junction to Ambient
Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (a)(d) (b)(e) (b)(d)
SYMBOL R JA R JA R JA
VALUE 100 70 60
UNIT C/W C/W C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power.
PROVISIONAL ISSUE F - JULY 2004 2
ZXMC3A16DN8
CHARACTERISTICS
PROVISIONAL ISSUE F - JULY 2004 3
ZXMC3A16DN8
N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs
30 0.5 100 1 0.035 0.050 13.5
V A nA V
I D =250A, V GS =0V V DS =30V, V GS =0V V GS =20V, V DS =0V I =250A, V DS = V GS D V GS =10V, I D =9A V GS =4.5V, I D =7.4A
S
V DS =15V,I D =9A
Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge
NOTES (3)
C iss C oss C rss
796 137 84
pF pF pF V DS =25 V, V GS =0V, f=1MHz
t d(on) tr t d(off) tf Qg Qg Q gs Q gd
3.0 6.4 21.6 9.4 9.2 17.5 2.3 3.1
ns ns ns ns nC nC nC nC V DS =15V,V GS =10V, I D =3.5A V DS =15V,V GS =5V, I D =3.5A V DD =15V, I D =3.5A R G =6.0, V GS =10V
V SD t rr Q rr
0.85 17.8 11.6
0.95
V ns nC
T J =25C, I S =5.1A, V GS =0V T J =25C, I F =3.5A, di/dt= 100A/s
(1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE F - JULY 2004 4
ZXMC3A16DN8
P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING
(2) (3)
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs
-30 -1.0 100 1.0 0.048 0.070 9.2
V A nA V
I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A
S
V DS =-15V,I D =-4.2A
C iss C oss C rss
970 166 116
pF pF pF V DS =-15 V, V GS =0V, f=1MHz
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge
NOTES (3)
t d(on) tr t d(off) tf Qg Qg Q gs Q gd
3.8 6.1 35 19 12.9 24.9 2.67 3.86
ns ns ns ns nC nC nC nC V DS =-15V,V GS =-10V, I D =-4.2A V DS =-15V,V GS =-5V, I D =-4.2A V DD =-15V, I D =-1A R G =6.0, V GS =-10V
V SD t rr Q rr
-0.85 21.2 18.7
-0.95
V ns nC
T J =25C, I S =-3.6A, V GS =0V T J =25C, I F =-2A, di/dt= 100A/s
(1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE F - JULY 2004 5
ZXMC3A16DN8
N-CHANNEL TYPICAL CHARACTERISTICS
T = 25C
10V
4V
T = 150C
10V
4V
ID Drain Current (A)
ID Drain Current (A)
10 1 0.1
3V 2.5V 2V VGS 1.5V
10 1
3.5V 3V 2.5V 2V 1.5V
0.1
VGS 1V
0.01 0.1
0.01 0.1 1 10
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
1.6
Normalised RDS(on) and VGS(th)
Output Characteristics
VGS = 10V ID = 1.5A RDS(on)
ID Drain Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
10
T = 150C T = 25C
1
VGS(th) VGS = VDS ID = 250uA
VDS = 10V
0.1 1
2
3
4
50
100
150
Typical Transfer Characteristics
100
RDS(on) Drain-Source On-Resistance ()
T = 25C
VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Normalised Curves v Temperature
100
10 1 0.1 0.01 0.1
2V VGS 2.5V 3V 4V 10V
ISD Reverse Drain Current (A)
T = 150C
10
T = 25C
1
1
10
0.1 0.2
On-Resistance v Drain Current
ID Drain Current (A)
VSD Source-Drain Voltage (V)
0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE F - JULY 2004 6
ZXMC3A16DN8
N-CHANNEL TYPICAL CHARACTERISTICS
1200
10
C Capacitance (pF)
1000 800 600 400 200 0 0.1 1
CISS COSS
VGS Gate-Source Voltage (V)
VGS = 0V f = 1MHz
ID = 3.5A
8 6 4 2
VDS = 15V
CRSS
10
0 0
5
10
15
20
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE F - JULY 2004 7
ZXMC3A16DN8
P-CHANNEL TYPICAL CHARACTERISTICS
T = 25C
10V
4V
-ID Drain Current (A)
10
-ID Drain Current (A)
3.5V 3V 2.5V 2V -VGS
T = 150C
10V
4V
10
3.5V 3V 2.5V 2V 1.5V
1
1
-VGS
0.1
1.5V
0.1
0.01
0.1
-VDS Drain-Source Voltage (V)
1
10
0.01
0.1
-VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
T = 150C T = 25C
Output Characteristics
VGS = -10V ID = -4.2A RDS(on)
Normalised RDS(on) and VGS(th)
10
-ID Drain Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
1
VGS(th) VGS = VDS ID = -250uA
-VDS = 10V
0.1 1
2
3
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Typical Transfer Characteristics
100
RDS(on) Drain-Source On-Resistance () -ISD Reverse Drain Current (A)
Normalised Curves v Temperature
100 10 1 0.1 0.01 0.01
1.5V -VGS 2V
T = 25C
T = 150C
10 1 0.1
T = 25C
2.5V 3V 3.5V 4V 10V
0.1
1
10
0.01 0.0
-ID Drain Current (A)
-VSD Source-Drain Voltage (V)
0.2
0.4
0.6
0.8
1.0
1.2
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE F - JULY 2004 8
ZXMC3A16DN8
P-CHANNEL TYPICAL CHARACTERISTICS
C Capacitance (pF)
1200 1000 800 600 400 200 0 0.1 1
CISS COSS
-VGS Gate-Source Voltage (V)
1400
10
VGS = 0V f = 1MHz -ID = 4.2A
8 6 4 2
-VDS = 15V
CRSS
10
0 0
5
10
15
20
25
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE F - JULY 2004 9
ZXMC3A16DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS
PACKAGE DIMENSIONS
Millimeters DIM Min A A1 D H E L 1.35 0.10 4.80 5.80 3.80 0.40 Max 1.75 0.25 5.00 6.20 4.00 1.27 Min 0.053 0.004 0.189 0.228 0.150 0.016 Max 0.069 0.010 0.197 0.244 0.157 0.050 h e b c Inches DIM Min Max Min Max 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 Millimeters Inches
(c) Zetex Semiconductors plc 2004
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
PROVISIONAL ISSUE F - JULY 2004 10

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