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| NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 AUGUST 94 FEATURES * 60 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Ptot=1.2 Watts APPLICATIONS * Emergency lighting circuits ZTX851 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 150 60 6 20 5 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) 10 50 100 200 920 3-294 MIN. 150 150 60 6 TYP. 220 220 85 8 50 1 50 1 10 50 100 150 250 1050 MAX. UNIT V V V V A A CONDITIONS. IC=100A IC=1A, RB 1K IC=10mA* IE=100A VCB=120V VCB=120V, Tamb=100C VCB=120V VCB=120V, Tamb=100C VEB=6V IC=0.1A, IB=5mA* IC=1A, IB=50mA* IC=2A, IB=50mA* IC=5A, IB=200mA* IC=4A, IB=200mA* nA nA nA mV mV mV mV mV VBE(sat) ZTX851 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 75 25 MIN. TYP. 840 200 200 120 50 130 45 45 1100 MAX. 950 300 MHz pF ns ns UNIT mV CONDITIONS. IC=4A, VCE=1V* IC=10mA, VCE=1V IC=2A, VCE=1V* IC=5A, VCE=1V* IC=10A, VCE=1V* IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=1A, IB!=100mA IB2=100mA, VCC=10V fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W Max Power Dissipation - (Watts) 4.0 Thermal Resistance (C/W) 150 t1 D.C. D=t1/tP 3.0 Ca se 100 te tP D=0.6 2.0 m 1.0 Amb ient te mpe ratu -40 -20 0 20 40 pe ra tu re 50 D=0.2 D=0.1 re 60 80 100 120 140 160 180 200 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-295 ZTX851 TYPICAL CHARACTERISTICS 0.8 1.6 hFE - Normalised Gain 300 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=1V 100 200 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=1V 2.0 2.0 VBE(sat) - (Volts) 1.5 IC/IB=10 IC/IB=50 1.0 VBE - (Volts) 1.5 1.0 0.5 0.001 0.01 0.1 1 10 100 0.5 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 100 Single Pulse Test at Tamb=25C VBE(on) v IC IC - Collector Current (Amps) 10 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.1 0.1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-296 hFE - Typical Gain VCE(sat) - (Volts) 1.4 |
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