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| NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 MARCH 94 FEATURES * 15 Volt VCEO * fT=500 MHz ZTX314 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 40 15 5 100 500 300 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW C -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Storage Time Turn-on Time Turn-off Time SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO VCE(SAT) VBE(SAT) hFE 0.7 40 40 30 20 500 4 13 12 18 MIN. 40 15 5 200 30 0.2 0.5 0.85 1.6 120 120 MHz pF ns ns ns MAX. UNIT V V V A CONDITIONS. IC=10A, IE=0 IC=10mA, IB=0* IE=10A, IC=0 VCB=20V, IE=0 VCB=20V, IE=0, Tamb=100C IC=10mA, IB=1mA* IC=100mA, IB=10mA* IC=10mA, IB=1mA* IC=100mA, IB=10mA* IC=10mA, VCE=1V* IC=10mA, VCE=0.35V* IC=30mA, VCE=1V* IC=100mA, VCE=1V* IC=10mA, VCE=10V f=100MHz VCB=5V, f=1MHz IC=IB1=IB2=10mA IC=10mA, IB1=3mA IC=10mA, IB1=3mA, IB2=1.5mA nA V V V fT Cobo tstg ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-158 |
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