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| Mini PROFET(R) BSP 350 * High-side switch * Short-circuit protection * Overtemperature protection with hysteresis * Overload protection * Overvoltage protection * Reverse battery protection1) * Switching inductive load * Clamp of negative output voltage with inductive loads * Maximum current internally limited Package: SOT 223 Type Ordering code Q67000-S227 Pins: 1 IN 2 Vbb 3 OUT MiniPROFET 4 3 2 1 4 Vbb BSP 350 Maximum Ratings Parameter Supply voltage Load current self-limited Maximum current through input pin (DC) see internal circuit diagram Symbol Values Vbb 50 IL IL(SC) IIN 15 Unit V A mA mJ C W K/W Inductive load switch-off energy dissipation Operating temperature range Storage temperature range Max. power dissipation (DC)2) TA = 25 C Thermal resistance chip - soldering point: chip - ambient:2) EAS Tj Tstg Ptot RthJS RthJA + V bb 2/4 5 -40 ...+150 -55 ...+150 1.7 17 72 Control Circuit OUT 3 R IN IN 1 RL Temperature Sensor GND 1) 2) For 12 V applications only. Reverse load current only limited by connected load. BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Semiconductor Group 1 04.97 BSP 350 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Load Switching Capabilities and Characteristics On-state resistance (pin 2 to 3) IL = 0.07 A, pin 1 = GND Tj = 25C Tj = 150C Vbb = 6 V, Tj = 25C Nominal load current (pin 2 to 3) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 270 Slew rate on 10 to 30% VOUT, RL = 270 Slew rate off 70 to 40% VOUT, RL = 270 RON ---0.07 4 8 5 -- 5 10 10 -- IL(ISO) A ton toff dV /dton -dV/dtoff ----- 60 70 4 2 100 140 6 6 s V/s Input Tj = - 40...+150C OFF state input current RL = 270 , VOUT 0,1V ON state input current, (pin 1 grounded)3) Tj = - 40...+150C IIN(off) IIN(on) --- -0.3 0.05 1 mA mA Operating Parameters Operating voltage (pin 1 grounded)4) Tj = - 40...+150C Leakage current (pin 2 to 3, pin 1 open) Tj = 25C Tj =150C Vbb(on) Ibb(off) 4.9 --- -1 1.2 45 10 10 V A 3) 4) Driver circuit must be capable to drive currents >1mA. Below Vbb=4.5 V typ. without chargepump, Vout Vbb - 2 V Semiconductor Group 2 BSP 350 Parameter and Conditions at Tj = 25 C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Protection Functions Current limit (pin 2 to 3)5) Tj = 25C Tj = -40...+150 IL(SC) Tjt Tjt Vbbin(AZ) VON(CL) EAS RIN Thermal overload trip temperature Thermal hysteresis Overvoltage protection Tj =-40...+150C Output clamp (ind. load switch off) at VOUT = Vbb - VON(CL) Inductive load switch-off energy dissipation6) Reverse battery resistor (pin 1 to 2) 0.2 0.1 150 -50 ---- 0.5 --20 56 56 -1 1 1.2 ----5 -- A C K V V mJ k Reverse Diode Continious reverse drain current Pulsed reverse drain current Diode forward on voltage IF = 0.2 A, IIN = 0.05 mA Tj = 25C Tj = 25C IS ISM VSD ---- --0.9 0.2 0.8 1.2 A A V 5) load current limits onset at IL * Ron approx. 1V short circuit protection: combination of current limit and thermal overload switch off while demagnetizing load inductance, dissipated energy is EAS= (VON(CL) * iL(t) dt, VON(CL) 2 approx. EAS= 1/2 * L * IL * ( ) VON(CL)-Vbb 6) Semiconductor Group 3 BSP 350 Max allowable power dissipation Ptot = f (TA,TSP) Ptot [W] 8 7 6 5 T 4 3 2 TA 1 0 0 25 50 75 100 125 150 TA, TSP[C] 1 0 0 5 10 15 20 25 Vbb [V] SP 4 3 2 Typ. on state resistance (Vbb- pin to OUT pin) RON = f (Vbb); IL = 70 mA; Tj = 25C RON [] 8 7 6 5 On state resistance (Vbb- pin to OUT pin) RON = f (Tj);Vbb = 13.5 V;IL = 70 mA RON [] 10 9 Typ. short circuit current IL(SC) = f(Tj); Vbb = 13.5V ILSC [] 0.7 0.6 8 7 6 5 typ 4 3 2 0.1 1 0 -50 -25 0 25 50 75 100 125 150 TJ [C] 0 -50 -25 0 25 50 75 100 125 150 TJ [C] 0.3 98% 0.5 0.4 0.2 Semiconductor Group 4 BSP 350 Test circuit Typ. short circuit current IL(SC) = f(VON); Vbb = 13.5V; Tj = 25C ILSC [] 0.7 V bb 2/4 V on 0.6 I in 1 3 0.5 V out V in 0.4 0.3 0.2 Turn on conditions 0.1 0 0 2 4 6 8 VON [V] Typ. short circuit current IL(SC) = f(t); Vbb = 13.5V no heatsink; Parameter: TjStart IL(SC)[mA] 1000 800 600 400 Chargepump threshold VON = f (Vbb) 125C 25C -40C 200 4 2 0 -0,5 0,5 1,5 2,5 3,5 4,5 5,5 typ. m ax. t[s] 2 4 6 8 Semiconductor Group 5 BSP 350 Package: all dimensions in mm. SOT 223/3: Semiconductor Group 6 |
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