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INTEGRATED CIRCUITS DATA SHEET 74HC2G66; 74HCT2G66 Bilateral switches Product specification Supersedes data of 2003 Nov 26 2004 May 19 Philips Semiconductors Product specification Bilateral switches FEATURES * Wide supply voltage range from 2.0 V to 9.0 V * Very low ON-resistance: - 41 (typical) at VCC = 4.5 V - 30 (typical) at VCC = 6.0 V - 21 (typical) at VCC = 9.0 V. * High noise immunity * Low power dissipation * 25 mA switch current * SOT505-2 package * ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. * Specified from -40 C to +85 C and -40 C to +125 C. DESCRIPTION 74HC2G66; 74HCT2G66 The 74HC2G66/74HCT2G66 is a high-speed Si-gate CMOS device. The 74HC2G66/74HCT2G66 provides a dual analog switch. Each switch has two pins (nY and nZ) for input or output and an active HIGH enable input (pin E). When pin E is LOW, the belonging analog switch is turned off. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 C; tr = tf = 6.0 ns; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output. TYPICAL SYMBOL tPZH/tPZL tPHZ/tPLZ CI CPD CS Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD x VCC2 x fi + (CL +CS) x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = Switch capacitance in pF; VCC = supply voltage in Volts. 2. For 74HC2G66 the condition is VI = GND to VCC. For 74HCT2G66 the condition is VI = GND to VCC - 1.5 V. PARAMETER turn-on time nE to Vos turn-off time nE to Vos input capacitance power dissipation capacitance per switch notes 1 and 2 switch capacitance CONDITIONS HC2G CL = 50 pF; RL = 1 k; VCC = 4.5 V 12 CL = 50 pF; RL = 1 k; VCC = 4.5 V 12 3.5 9 8 HCT2G 13 13 3.5 9 8 ns ns pF pF pF UNIT 2004 May 19 2 Philips Semiconductors Product specification Bilateral switches FUNCTION TABLE See note 1. INPUT nE L H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION PACKAGE TYPE NUMBER 74HC2G66DP 74HCT2G66DP PINNING PIN 1 2 3 4 5 6 7 8 1Y 1Z 2E GND 2Y 2Z 1E VCC SYMBOL independent input or output independent input or output enable input (active HIGH) ground (0 V) independent input or output independent input or output enable input (active HIGH) supply voltage TEMPERATURE RANGE -40 C to +125 C -40 C to +125 C PINS 8 8 PACKAGE TSSOP8 TSSOP8 74HC2G66; 74HCT2G66 SWITCH OFF ON MATERIAL plastic plastic OUTLINE VERSION SOT505-2 SOT505-2 MARKING H66 T66 DESCRIPTION handbook, halfpage handbook, halfpage 1Y 1 1Z 2 8 7 VCC 1E 2Z 1Y 1E 2Z 1Z 66 2E 3 GND 4 MNB002 6 5 2Y 2E MNB003 2Y Fig.1 Pin configuration. Fig.2 Logic symbol. 2004 May 19 3 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 handbook, halfpage 1 7# 5 3# 1 X1 1 X1 1 2 handbook, halfpage nZ 1 MNB004 6 nE GND nY MNB005 Fig.3 IEC logic symbol. Fig.4 Logic diagram. RECOMMENDED OPERATING CONDITIONS 74HC2G66 SYMBOL VCC VI VO Tamb tr, tf PARAMETER supply voltage input voltage output voltage ambient temperature CONDITIONS MIN. 2.0 0 0 see DC and AC -40 characteristics per device - - - - TYP. 5.0 - - +25 - 6.0 - - MAX. 10.0 VCC VCC +125 1000 500 400 250 MIN. 4.5 0 0 -40 - - - - TYP. 5.0 - - +25 - 6.0 - - MAX. 5.5 VCC VCC +125 - 500 - - V V V C ns ns ns ns 74HCT2G66 UNIT input rise and fall VCC = 2.0 V times VCC = 4.5 V VCC = 6.0 V VCC = 9.0 V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK IOK IO ICC, IGND Tstg Ptot Ps Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 55 C the value of Ptot derates linearly with 2.5 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation of package power dissipation per switch Tamb = -40 C to +125 C; note 2 VI < -0.5 V or VI > VCC + 0.5 V; note 1 VO < -0.5 V or VO > VCC + 0.5 V; note 1 -0.5 V < VO < VCC + 0.5 V; note 1 note 1 CONDITIONS MIN. -0.5 - - - - -65 - - MAX. +11.0 20 20 25 30 +150 300 100 UNIT V mA mA mA mA C mW mW 2004 May 19 4 Philips Semiconductors Product specification Bilateral switches DC CHARACTERISTICS 74HC2G66; 74HCT2G66 Type 74HC2G66 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = -40 C to +85 C; note1 VIH HIGH-level input voltage 2.0 4.5 6.0 9.0 VIL LOW-level input voltage 2.0 4.5 6.0 9.0 ILI Is(OFF) input leakage current analog switch current, OFF-state analog switch current, ON-state quiescent supply current VI = VCC or GND VI = VIH or VIL; VS = VCC - GND; see Fig.7 VI = VIH or VIL; VS = VCC - GND; see Fig.8 VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND 6.0 9.0 9.0 1.5 3.15 4.2 6.3 - - - - - - - 1.2 2.4 3.2 4.7 0.8 2.1 2.8 4.3 - - 0.1 - - - - 0.5 1.35 1.8 2.7 0.1 0.2 1.0 V V V V V V V V A A A VCC (V) MIN. TYP. MAX. UNIT Is(ON) 9.0 - 0.1 1.0 A ICC 6.0 9.0 - - - - 10 20 A A 2004 May 19 5 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = -40 C to +125 C VIH HIGH-level input voltage 2.0 4.5 6.0 9.0 VIL LOW-level input voltage 2.0 4.5 6.0 9.0 ILI Is(OFF) input leakage current analog switch current, OFF-state analog switch current, ON-state quiescent supply current VI = VCC or GND VI = VIH or VIL; VS = VCC - GND; see Fig.7 VI = VIH or VIL; VS = VCC - GND; see Fig.8 VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND 6.0 9.0 9.0 1.5 3.15 4.2 6.3 - - - - - - - - - - - - - - - - - - - - - - 0.5 1.35 1.8 2.7 0.1 0.2 1.0 V V V V V V V V A A A VCC (V) MIN. TYP. MAX. UNIT Is(ON) 9.0 - - 1.0 A ICC 6.0 9.0 - - - - 20 40 A A Note 1. All typical values are measured at Tamb = 25 C. 2004 May 19 6 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 Type 74HCT2G66 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = -40 C to +85 C; note 1 VIH VIL ILI Is(OFF) HIGH-level input voltage LOW-level input voltage input leakage current analog switch current, OFF-state analog switch current, ON-state quiescent supply current VI = VCC or GND VI = VIH or VIL; VS = VCC - GND; see Fig.7 VI = VIH or VIL; VS = VCC - GND; see Fig.8 VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND VI = VCC - 2.1 V; IO = 0 A 4.5 to 5.5 4.5 to 5.5 4.5 to 5.5 5.5 2.0 - - - 1.6 1.2 - 0.1 - 0.8 1.0 1.0 V V A A VCC (V) MIN. TYP. MAX. UNIT Is(ON) - 0.1 1.0 A ICC - - 10 A ICC additional supply current per input 4.5 to 5.5 - - 375 A Tamb = -40 C to +125 C VIH VIL ILI Is(OFF) HIGH-level input voltage LOW-level input voltage input leakage current analog switch current, OFF-state analog switch current, ON-state quiescent supply current VI = VCC or GND VI = VIH or VIL; VS = VCC - GND; see Fig.7 VI = VIH or VIL; VS = VCC - GND; see Fig.8 VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND VI = VCC - 2.1 V; IO = 0 A 4.5 to 5.5 4.5 to 5.5 4.5 to 5.5 5.5 2.0 - - - - - - - - 0.8 1.0 1.0 V V A A Is(ON) - - 1.0 A ICC - - 20 A ICC Note additional supply current per input 4.5 to 5.5 - - 410 A 1. All typical values are measured at Tamb = 25 C. 2004 May 19 7 Philips Semiconductors Product specification Bilateral switches Resistance RON for 74HC2G66 and 74HCT2G66 See notes 1 and 2. TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = -40 C to +85 C; note 3 RON(peak) ON-resistance (peak) Vis = VCC to GND; VI = VIH or VIL; see Figs 5 and 6 2.0 4.5 6.0 9.0 RON(rail) ON-resistance (rail) Vis = GND; VI = VIH or VIL; see Figs 5 and 6 2.0 4.5 6.0 9.0 Vis = VCC; VI = VIH or VIL; see Figs 5 and 6 2.0 4.5 6.0 9.0 RON maximum variation of ON-resistance between the two channels Vis = VCC to GND; VI = VIH or VIL; see Figs 5 and 6 4.5 6.0 9.0 100 1000 1000 1000 100 1000 1000 1000 100 1000 1000 1000 - - - 74HC2G66; 74HCT2G66 MIN. VCC (V) Is (A) - - - - - - - - - - - - - - - - - - - - - - - - - - - TYP. MAX. UNIT 250 41 30 21 65 28 22 18 65 31 23 19 5 4 3 - - - - - - - - - - - - - 118 105 88 - 95 82 70 - 106 94 78 - - - - 142 126 105 - 115 100 80 - 128 113 95 Tamb = -40 C to +125 C RON(peak) ON-resistance (peak) Vis = VCC to GND; VI = VIH or VIL; see Figs 5 and 6 2.0 4.5 6.0 9.0 RON(rail) ON-resistance (rail) Vis = GND; VI = VIH or VIL; see Figs 5 and 6 2.0 4.5 6.0 9.0 Vis = VCC; VI = VIH or VIL; see Figs 5 and 6 2.0 4.5 6.0 9.0 Notes 1. For 74 HCT2G66 only VCC = 4.5 V applies; for 74HC2G66 all VCC values apply. 2. At supply voltages near 2 V, the analog switch ON-resistance is extremely non linear. When using a supply of 2 V, it is recommended is to use these devices only for digital signals. 3. All typical values are measured at Tamb = 25 C. 100 1000 1000 1000 100 1000 1000 1000 100 1000 1000 1000 2004 May 19 8 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 handbook, halfpage 60 MNB006 RON () 40 HIGH (from enable inputs) VCC = 4.5 V VCC = 6.0 V V 20 Y Z VCC = 9.0 V Iis GND Vis = 0 to VCC - GND 10 MNA078 0 0 2 4 6 8 Vis (V) 10 Vis = 0 V to VCC. Fig.5 Test circuit for measuring ON-resistance (RON). Fig.6 Typical ON-resistance (RON) as function of input voltage (Vis). LOW (from enable input) HIGH (from enable input) Y A VI = VCC or GND Z A VO = GND or VCC GND MNA079 Y A VI = VCC or GND Z A VO (open circuit) GND MNA080 Fig.7 Test circuit for measuring OFF-state current. Fig.8 Test circuit for measuring ON-state current. 2004 May 19 9 Philips Semiconductors Product specification Bilateral switches AC CHARACTERISTICS 74HC2G66; 74HCT2G66 Type 74HC2G66 GND = 0 V; tr = tf = 6.0 ns; Vis is the input voltage at pins nY or nZ, whichever is assigned as an input; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS Tamb = -40 C to +85 C; note 1 tPHL/tPLH propagation delay Vis to Vos RL = ; see Figs 16 and 18 2.0 4.5 6.0 9.0 tPZH/tPZL turn-on time nE to Vos RL = 1 k; see Figs 17 and 18 2.0 4.5 6.0 9.0 tPHZ/tPLZ turn-off time nE to Vos RL = 1 k; see Figs 17 and 18 2.0 4.5 6.0 9.0 Tamb = -40 C to +125 C tPHL/tPLH propagation delay Vis to Vos RL = ; see Figs 16 and 18 2.0 4.5 6.0 9.0 tPZH/tPZL turn-on time nE to Vos RL = 1 k; see Figs 17 and 18 2.0 4.5 6.0 9.0 tPHZ/tPLZ turn-off time nE to Vos RL = 1 k; see Figs 17 and 18 2.0 4.5 6.0 9.0 Note 1. All typical values are measured at Tamb = 25 C. - - - - - - - - - - - - - - - - - - - - - - - - 80 15 14 12 150 30 26 20 175 35 33 27 ns ns ns ns ns ns ns ns ns ns ns ns - - - - - - - - - - - - 6.5 2.0 1.5 1.2 40 12 10 7 21 12 11 10 65 13 11 10 125 25 21 16 145 29 28 23 ns ns ns ns ns ns ns ns ns ns ns ns VCC (V) MIN. TYP. MAX. UNIT 2004 May 19 10 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 Type 74HCT2G66 GND = 0 V; tr = tf = 6.0 ns; Vis is the input voltage at pins nY or nZ, whichever is assigned as an input; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS Tamb = -40 C to +85 C; note 1 tPHL/tPLH tPZH/tPZL tPHZ/tPLZ propagation delay Vis to Vos turn-on time nE to Vos turn-off time nE to Vos RL = ; see Figs 16 and 18 RL = 1 k; see Figs 17 and 18 RL = 1 k; see Figs 17 and 18 RL = ; see Figs 16 and 18 RL = 1 k; see Figs 17 and 18 RL = 1 k; see Figs 17 and 18 4.5 4.5 4.5 - - - 2.0 13 13 15 30 44 ns ns ns VCC (V) MIN. TYP. MAX. UNIT Tamb = -40 C to +125 C tPHL/tPLH tPZH/tPZL tPHZ/tPLZ Note 1. All typical values are measured at Tamb = 25 C. propagation delay Vis to Vos turn-on time nE to Vos turn-off time nE to Vos 4.5 4.5 4.5 - - - - - - 18 36 53 ns ns ns 2004 May 19 11 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 Type 74HC2G66 and 74HCT2G66 At recommended conditions and typical values; GND = 0 V; tr = tf = 6.0 ns; Vis is the input voltage at pins nY or nZ, whichever is assigned as an input; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output. TEST CONDITIONS SYMBOL dsin PARAMETER OTHER sine-wave distortion f = 1 kHz; RL = 10 k; CL = 50 pF; see Fig.14 f = 10 kHz; RL = 10 k; CL = 50 pF; see Fig.14 OFF(feedthru) ct(s) Vct(E-S)(p-p) switch OFF signal feed-through crosstalk between the two switches crosstalk voltage between enable input to the switches (peak-to-peak value) frequency response (-3 dB) switch capacitance Vis(p-p) (V) 4.0 8.0 4.0 8.0 VCC (V) 4.5 9.0 4.5 9.0 4.5 9.0 4.5 9.0 note 1 4.5 9.0 0.04 0.02 0.12 0.06 -50 -50 -60 -60 110 220 % % % % dB dB dB dB mV mV TYP. UNIT RL = 600 ; CL = 50 pF; note 1 f = 1 MHz; see Figs 9 and 15 RL = 600 ; CL = 50 pF; f = 1 MHz; see Fig 11 RL = 600 ; CL = 50 pF; f = 1 MHz (nE, square wave between VCC and GND, tr = tf = 6.0 ns); see Fig 12 RL = 50 ; CL = 10 pF; see Figs 10 and 13 note 1 fmax CS Notes note 2 4.5 9.0 180 200 8 MHz MHz pF 1. Adjust input voltage Vis is 0 dBm level (0 dBm = 1 mW into 600 ). 2. Adjust input voltage Vis is 0 dBm level at Vos for 1 MHz (0 dBm = 1 mW into 50 ). 2004 May 19 12 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 MNA082 handbook, full pagewidth 0 (dB) -20 -40 -60 -80 -100 10 102 103 104 105 f (kHz) 106 Test conditions: VCC = 4.5 V; GND = 0 V; RL = 50 ; RSOURCE = 1 k. Fig.9 Typical switch OFF signal feed-through as a function of frequency. MNA083 handbook, full pagewidth 5 (dB) 0 -5 10 102 103 104 105 f (kHz) 106 Test conditions: VCC = 4.5 V; GND = 0 V; RL = 50 ; RSOURCE = 1 k. Fig.10 Typical frequency response. 2004 May 19 13 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 handbook, halfpage VCC 2RL nY/nZ nZ/nY handbook, halfpage VCC VCC 2RL nZ/nY Vos CL dB GND MNB010 0.1 F Vis RL 2RL nY/nZ channel ON 2RL CL GND MNB009 2RL channel OFF 2RL a. Channel ON condition. b. Channel OFF condition. Fig.11 Test circuit for measuring crosstalk between any two switches. handbook, full pagewidth VCC 2RL nY/nZ nE VCC GND VCC 2RL nZ/nY DUT 2RL 2RL CL oscilloscope GND MNB011 The crosstalk is defined as follows (oscilloscope output): handbook, halfpage V(p-p) MNB012 Fig.12 Test circuit for measuring crosstalk between control and any switch. 2004 May 19 14 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 handbook, full pagewidth VCC 2RL Y/Z 2RL channel ON MNA084 0.1 F Vis sine-wave Z/Y CL dB Vos GND Adjust input voltage to obtain 0 dBm at Vos when fi = 1 MHz. After set-up, frequency of fi is increased to obtain a reading of -3 dB at Vos. Fig.13 Test circuit for measuring minimum frequency response. handbook, full pagewidth VCC 2RL Y/Z Z/Y DISTORTION METER GND MNA085 10 F Vis fin = 1 kHz sine-wave Vos 2RL channel ON CL Fig.14 Test circuit for measuring sine-wave distortion. handbook, full pagewidth VCC 2RL Y/Z 2RL channel OFF MNA086 0.1 F Vis Z/Y CL dB Vos GND Fig.15 Test circuit for measuring switch OFF signal feed-through. 2004 May 19 15 Philips Semiconductors Product specification Bilateral switches AC WAVEFORMS 74HC2G66; 74HCT2G66 V handbook, halfpage I Vis GND tPLH VOH Vos VOL MNB007 VM tPHL VM 74HC2G66: VM = 50%; VI = GND to VCC. 74HCT2G66: VM = 1.3 V; VI = GND to 3.0 V. Fig.16 Waveforms showing input (Vis) to output (Vos) propagation delay and the output transition time. handbook, full pagewidth VI nE GND t PLZ VCC nY or nZ output LOW-to-OFF OFF-to-LOW VOL t PHZ VOH nY or nZ output HIGH-to-OFF OFF-to-HIGH GND switch enabled switch disabled switch enabled MNB008 VM t PZL VM VX t PZH VY VM VX = 10% of signal amplitude. VY = 90% of signal amplitude. 74HC2G66: VM = 50%; VI = GND to VCC. 74HCT2G66: VM = 1.3 V; VI = GND to 3.0 V. Fig.17 Waveforms showing turn-on and turn-off times. 2004 May 19 16 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 handbook, full pagewidth tW 90% negative input pulse 10% tTHL (tf) tTLH (tr) 90% positive input pulse 10% tW VM 0V MNA089 amplitude VM 0V tTLH (tr) tTHL (tf) amplitude Input pulse definition: tr = tf = 6 ns, when measuring fmax, there is no constraint on tr, tf with 50% duty factor. 74HC2G66: VM = 50%; VI = GND to VCC. 74HCT2G66: VM = 1.3 V; VI = GND to 3.0 V. handbook, full pagewidth S1 VCC PULSE GENERATOR VI D.U.T. RT CL = 50 pF MNA742 VCC open GND RL = VO 1 k TEST tPLH/tPHL tPLZ/tPZL tPHZ/tPZH open VCC GND S1 Definitions for test circuit: RL = Load resistor. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. Fig.18 Load circuitry for switching times. 2004 May 19 17 Philips Semiconductors Product specification Bilateral switches PACKAGE OUTLINE 74HC2G66; 74HCT2G66 TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2 D E A X c y HE vMA Z 8 5 A pin 1 index A2 A1 (A3) Lp L 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.00 A2 0.95 0.75 A3 0.25 bp 0.38 0.22 c 0.18 0.08 D(1) 3.1 2.9 E(1) 3.1 2.9 e 0.65 HE 4.1 3.9 L 0.5 Lp 0.47 0.33 v 0.2 w 0.13 y 0.1 Z(1) 0.70 0.35 8 0 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT505-2 REFERENCES IEC JEDEC --JEITA EUROPEAN PROJECTION ISSUE DATE 02-01-16 2004 May 19 18 Philips Semiconductors Product specification Bilateral switches DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development 74HC2G66; 74HCT2G66 DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 May 19 19 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R44/04/pp20 Date of release: 2004 May 19 Document order number: 9397 750 13255 |
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