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| Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features 2.60.1 4.50.1 1.60.2 1.50.1 q q q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 3 2 1 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 40 25 7 5 3 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package marking Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Marking symbol : T Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 10V, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ max 0.1 2.50.1 +0.25 Unit A V V 25 7 230 150 1 150 50 *2 600 V MHz pF Pulse measurement *1h FE1 Rank classification Rank hFE1 Marking Symbol Q 230 ~ 380 TQ R 340 ~ 600 TR 1 Transistor PC -- Ta 1.2 2.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 2.0 IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 5 2SD1119 IC -- VCE 6 VCE=2V 25C Ta=75C 4 -25C IC -- VBE Collector power dissipation PC (W) 1.0 Collector current IC (A) 0.8 0.6 Collector current IC (A) 3 0.4 2 0.2 1mA 1 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=30 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=30 600 hFE -- IC VCE=2V Forward current transfer ratio hFE 500 400 Ta=75C 300 25C -25C 200 100 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 400 350 300 250 200 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 100 Cob -- VCB Collector output capacitance Cob (pF) VCB=6V Ta=25C IE=0 f=1MHz Ta=25C 80 Transition frequency fT (MHz) 60 40 20 0 -1 -3 -10 1 3 10 30 100 Emitter current IE (A) Collector to base voltage VCB (V) 2 |
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