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| Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A 5.00.2 Unit: mm 4.00.2 q q Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. (Ta=25C) Ratings -30 -60 -25 -50 -5 -1.5 -1 750 150 -55 ~ +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB621 2SB621A 2SB621 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 13.50.5 5.10.2 s Features 0.45 -0.1 +0.2 0.45 -0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW C C 1.27 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB621 2SB621A 2SB621 2SB621A (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -500mA VCE = -5V, IC = -1A IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min typ max - 0.1 Unit A V -30 -60 -25 -50 -5 85 50 - 0.2 - 0.85 200 20 30 -0.4 -1.2 340 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h V V MHz pF FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.0 -1.5 Ta=25C 2SB621, 2SB621A IC -- VCE -1.2 VCE=-10V TC=25C -1.0 IC -- IB Collector power dissipation PC (W) 0.9 Collector current IC (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 -1.0 -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA - 0.75 - 0.5 - 0.25 0 0 -2 -4 -6 -8 -10 Collector current IC (A) 0.8 -1.25 IB=-10mA -9mA - 0.8 - 0.6 - 0.4 - 0.2 0 0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 -100 -30 -10 -3 25C -1 75C Ta=-25C IC/IB=10 500 450 400 350 300 250 200 150 100 50 hFE -- IC VCE=-10V Forward current transfer ratio hFE Ta=75C 25C -25C - 0.3 - 0.1 - 0.03 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 200 180 Cob -- VCB 50 -120 VCER -- RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25C IC=-10mA Ta=25C Collector output capacitance Cob (pF) VCB=-10V Ta=25C 45 40 35 30 25 20 15 10 5 0 -1 Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 3 10 30 100 -100 -80 -60 2SB621A -40 2SB621 -20 -3 -10 -30 -100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistor ICEO -- Ta 104 VCE=-10V -10 -3 ICP 103 2SB621, 2SB621A Area of safe operation (ASO) Single pulse Ta=25C Collector current IC (A) -1 IC t=1s ICEO (Ta) ICEO (Ta=25C) t=10ms - 0.3 - 0.1 - 0.03 - 0.01 102 10 - 0.003 1 0 20 40 60 80 100 120 140 160 - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 2SB621A -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 2SB621 3 |
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