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2SB1189 / 2SB1238
Transistors
Medium power transistor (-80V, -0.7A)
2SB1189 / 2SB1238
!Features 1) High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. 2) Complements the 2SD1767 / 2SD1859. !External dimensions (Units : mm)
2SB1189
4.0 1.0 2.5 0.5
1.5 0.4
(1)
3.0
!Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB1189 2SB1238 Tj Tstg Symbol VCBO VCEO VEBO IC PC Limits -80 -80 -5 -0.7 0.5 2 1 150 -55~+150 C C W
1 2
0.5
(3)
V V V A
0.4
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
2SB1238
6.8 2.5
1 When mounted on a 40x40x0.7 mm ceramic board. 2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
0.65Max.
1.0
!Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces) 2SB1189 MPT3 PQR 2SB1238 ATV PQR - TV2 2500
0.9
0.5 (1) (2) (3) 2.54 2.54
Denotes hFE
BD T100 1000
1.05
14.5
4.4
1.5
0.45
Unit
1.5 0.4
Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
!Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -80 -80 -5 - - - 82 - - Typ. - - - - - -0.2 - 100 14 Max. - - - -0.5 -0.5 -0.4 390 - 20 Unit V V V A A V - MHz pF IC=-50A IC=-2mA IE=-50A VCB=-50V VEB=-4V IC/IB=-500mA/-50mA VCE/IC=-3V/-0.1A VCE=-10V, IE=50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz Conditions
4.5
1.6
(2)

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