| PART |
Description |
Maker |
| HCPL-6250 HCPL-625K HCPL-625X 5962-8876801PA 5962- |
Hermetically Sealed. Low If. Wide Vcc. Logic Gate Optocouplers 密封。如果低。宽的VCC。逻辑门光电耦合
HCPL-523K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-523K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-88769022A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876903FC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876905K2A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876906KFC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
|
Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| RT9161-33CV |
Iout(mA) = 300 ;; IGND1( GA) = 110 ;; Output Voltage(V) = 1.5~5.0 ;; Vin (Min) = ;; Vin (Max) = 14 ;; Accuracy(%) = 2 ;; Features /
|
RICHTEK
|
| 5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
|
Agilent (Hewlett-Packard)
|
| SMT05E SMT05E-05S1V5J SMT05E-05W3V3J |
0.75 Vin to 3.63 Vin Single output
|
Artesyn Technologies
|
| ASI10523 ASI1002 |
NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 200mA ,Vcc: 35 V)(NPN 纭??灏??????朵?绠??ㄤ????C绾ф?澶у?,棰??杈?500 MHz(Ic:200mA ,Vcc: 35 V))
|
ADVANCED SEMICONDUCTOR INC
|
| SMT10E-05S1V2J |
3.0 Vin to 5.5 Vin Single output
|
Artesyn Technologies
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| 5962-04238 5962-04239 5962-04240 5962-04241 5962-0 |
10W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238
10W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239
10W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240
10W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241
10W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242
10W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243
10W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244
|
International Rectifier
|
| MIC2561 MIC2561-0BM MIC2561-1BM |
PCMCIA Card Socket VCC & VPP Switching Matrix
PCMCIA Card Socket VCC & VPP Switching Matrix 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14
|
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| SG140-35IG_883B SG140-35IG SG140-35L_883B SG140A-3 |
Positive Fixed Linear Voltage Regulators; Package: TO-3; VIN (V): 35; VDIFF (V): 35; IOUT (A): 1.5; VOUT (V): 8; 8 V FIXED POSITIVE REGULATOR, MBFM2
Positive Fixed Linear Voltage Regulators; Package: TO-66; VIN (V): 35; VDIFF (V): 35; IOUT (A): 1.5; VOUT (V): 5; 5 V FIXED POSITIVE REGULATOR, MBFM2
Positive Fixed Linear Voltage Regulators; Package: TO-3; VIN (V): 35; VDIFF (V): 35; IOUT (A): 1.5; VOUT (V): 5; 5 V FIXED POSITIVE REGULATOR, MBFM2
Positive Fixed Linear Voltage Regulators; Package: TO-257_(Hermetic); VIN (V): 35; VDIFF (V): 35; IOUT (A): 1.5; VOUT (V): 5; 5 V FIXED POSITIVE REGULATOR, SFM3
Positive Fixed Linear Voltage Regulators; Package: TO-257_(Hermetic); VIN (V): 35; VDIFF (V): 35; IOUT (A): 1.5; VOUT (V): 12; 12 V FIXED POSITIVE REGULATOR, SFM3
Positive Fixed Linear Voltage Regulators; Package: TO-257_(Hermetic); VIN (V): 35; VDIFF (V): 35; IOUT (A): 1.5; VOUT (V): 15; 15 V FIXED POSITIVE REGULATOR, SFM3
Positive Fixed Linear Voltage Regulators; Package: LCC; VIN (V): 35; VDIFF (V): 35; IOUT (A): 0.5; VOUT (V): 12; 12 V FIXED POSITIVE REGULATOR, CQCC20
Positive Fixed Linear Voltage Regulators; Package: TO-39; VIN (V): 35; VDIFF (V): 35; IOUT (A): 0.5; VOUT (V): 6; 6 V FIXED POSITIVE REGULATOR, MBCY3
Positive Fixed Linear Voltage Regulators; Package: LCC; VIN (V): 35; VDIFF (V): 35; IOUT (A): 0.5; VOUT (V): 6; 6 V FIXED POSITIVE REGULATOR, CQCC20
positve fixed voltage regulator
Positive Fixed Linear Voltage Regulators; Package: TO-66; VIN (V): 35; VDIFF (V): 35; IOUT (A): 1.5; VOUT (V): 15;
|
Microsemi, Corp.
Microsemi Corporation
|
| LP28052A-01 |
Vin Over Voltage Protection:6.5V
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Lowpower Semiconductor ...
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