| PART |
Description |
Maker |
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| AS4SD8M16DG-75/IT |
Self Refresh Mode
|
Micross Components
|
| M466F0804DT1-L |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
|
SAMSUNG[Samsung semiconductor]
|
| HM5165805FL HM5165805FLJ-6 HM5165805FTT-5 HM516580 |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
HITACHI[Hitachi Semiconductor]
|
| HMD4M36M9AG-6 |
16Mbyte(4Mx36) Fast Page with Parity Mode, 2K/4K Refresh
|
Hanbit Electronics Co.,Ltd.
|
| HMD4M32M8GL HMD4M32M8GL-6 HMD4M32M8GL-5 |
16Mbyte(4Mx32) Fast Page Mode, 4K Refresh 72Pin SIMM
|
Hanbit Electronics Co.,Ltd.
|
| HMD1M32M2EG HMD1M32M2EG-45 HMD1M32M2EG-50 HMD1M32M |
4MBYTE(1MX32) EDO MODE, 1K REFRESH, 72PIN SIMM, 5V DESIGN
|
Hanbit Electronics Co.,Ltd
|
| V53C16256SH V53C16256 |
256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HMD2M32M4EAG-5 HMD2M32M4EAG-6 HMD2M32M4EAG-7 |
8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd.
|
| HMD2M32M4EG-5 HMD2M32M4EG-6 HMD2M32M4EG-7 HMD2M32M |
8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| HMD1M4Z1-5 HMD1M4Z1-6 HMD1M4Z1 |
4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
|
Hanbit Electronics Co.,Ltd
|
