PART |
Description |
Maker |
HM5164165F HM5164165FJ-6 HM5165165FJ-6 HM5164165FJ |
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 6400 EDO公司的DRAM Mword x 16位)8K的refresh/4k刷新
|
Hitachi,Ltd. Hitachi Semiconductor
|
HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
M466F0804DT1-L |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
|
SAMSUNG[Samsung semiconductor]
|
HM5112805FLTD-6 HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
http:// Hitachi,Ltd.
|
HM5165805F HM5165805FJ HM5165805FJ-5 HM5165805FJ-6 |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
Hitachi Semiconductor
|
MT4C4007J |
1 MEG x 4 DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH
|
Micron Technology
|
HMD4M36M9G HMD4M36M9G-5 HMD4M36M9G-6 HMD4M36M9AG-5 |
16Mbyte(4Mx36) Fast Page with Parity Mode, 2K/4K Refresh
|
Hanbit Electronics Co.,... HANBIT[Hanbit Electronics Co.,Ltd]
|
HMD4M32M8GL-5 HMD4M32M8GL-6 HMD4M32M8GL |
16Mbyte(4Mx32) Fast Page Mode, 4K Refresh 72Pin SIMM
|
Hanbit Electronics Co.,Ltd
|
HMD4M32M8G HMD4M32M8G-5 HMD4M32M8G-6 HMD4M32M8AG-5 |
16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM
|
Hanbit Electronics Co.,Ltd
|
A42L2604S-45L A42L2604S-50L A42L2604V-45L A42L2604 |
45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode 50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMIC Technology
|
KM416C4000C KM416C4100C KM416C4000CS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HMD1M32M2GL HMD1M32M2GL-6 HMD1M32M2GL-5 |
4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd.
|