| PART |
Description |
Maker |
| AS27C256-90ECA AS27C256-15ECA AS27C256-30ECA AS27C |
256K UVEPROM UV Erasable Programmable Read-Only Memory
256K UVEPROM UV Erasable Programmable Read-Only Memory
|
Austin Semiconductor
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| ISL6142 ISL6142CB ISL6152 ISL6152CB ISL6152IB |
Hot Plug Controller, Negative Voltage, -20V to -80V, Prog Inrush Current, IntelliTripCurrent Regulation, UV/OV Protection, Prog Time Out, Load current monitor, Active high PWRGD
Hot Plug Controller, Negative Voltage, -20V to -80V, Prog Inrush Current, IntelliTrip Current Regulation, UV/OV Protection, Prog Time Out, Load current monitor, Active low PWRGD-bar
Negative Voltage Hot Plug Controller
|
INTERSIL[Intersil Corporation]
|
| IRU3013CQ IRU3013CW IRU3013CWTR |
5 Bit Prog in a 24-Pin QSOP(Q) package
5 Bit Prog in a 24-Pin SOIC(WB) package
|
International Rectifier
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| 5962-8946803XC 5962-8946803ZA 5962-8946803YA 5962- |
400ksps, 5V, 8-/4-Channel, 10-Bit ADCs with 2.5V Reference and Parallel Interface
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports UV-Erasable/OTP复杂可编程逻辑器件
|
Rohm Co., Ltd.
|
| PLDC18G8-15DMB PLDC18G8-20DMB PLDC18G8-15QMB PLDC1 |
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
Inductorless 5V to -5V Converter; Package: PDIP; No of Pins: 8; Temperature Range: -40°C to 85°C UV-Erasable/OTP可编程逻辑器件
|
Samsung Semiconductor Co., Ltd.
Foxconn Technology Co., Ltd.
Cypress Semiconductor, Corp.
Mitsubishi Electric, Corp.
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| ATV750B-25DI ATV750B-25DC ATV750B-7DC ATV750BQL-25 |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Atmel, Corp.
|
| CY7C346B-35NC CY7C346B-35RC CY7C346B-25JC |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Cypress Semiconductor, Corp.
|
